FQD8P10TM-F085 100V P-Channel MOSFET FQD8P10TM-F085 Features 100V P-Channel MOSFET * * * * * * * * General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant D D G S G D-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Ratings -100 Units V -6.6 A -4.2 A -26.4 A IDM Drain Current VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ IAR Avalanche Current (Note 1) -6.6 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 4.4 -6.0 2.5 mJ V/ns W 44 0.35 -55 to +150 W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.84 Units C/W RJA Thermal Resistance, Junction-to-Ambient * -- 50 C/W RJA Thermal Resistance, Junction-to-Ambient -- 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2010 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 Publication Order Number: FQD8P10TM-F085/D Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 A VDS = -80 V, TC = 125C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -3.3 A -- 0.41 0.53 gFS Forward Transconductance VDS = -40 V, ID = -3.3 A -- 4.1 -- S -- 360 470 pF -- 120 155 pF -- 30 40 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -8.0 A, RG = 25 (Note 4, 5) VDS = -80 V, ID = -8.0 A, VGS = -10 V (Note 4, 5) -- 11 30 -- 110 230 ns -- 20 50 ns -- 35 80 ns -- 12 15 nC -- 3.0 -- nC -- 6.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -6.6 A ISM -- -- -26.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -6.6 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -8.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature www.onsemi.com 2 (Note 4) -- 98 -- ns -- 0.35 -- C FQD8P10TM-F085 100V P-Channel MOSFET Electrical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top : -I D, Drain Current [A] 0 10 1 10 -I D , Drain Current [A] 1 10 -1 10 150 0 10 25 -55 Notes : 1. VDS = -40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -2 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 VGS = - 10V 1.2 0.9 10 -I DR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 1.5 VGS = - 20V 0.6 0.3 Note : TJ = 25 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0 5 10 15 20 25 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 900 800 Ciss 600 Notes : 1. VGS = 0 V 2. f = 1 MHz 500 400 Crss 300 200 100 0 -1 10 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 700 Capacitance [pF] 150 0 10 10 VDS = -50V VDS = -80V 8 6 4 2 Note : ID = -8.0 A 0 1 VDS = -20V 10 -V GS , Gate-Source Voltage [V] 0.0 0 10 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics www.onsemi.com 3 Figure 6. Gate Charge Characteristics FQD8P10TM-F085 100V P-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 0 -50 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -3.3 A 0.5 0.0 -100 200 -50 o 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 7 2 10 Operation in This Area is Limited by R DS(on) 6 100 s 5 -I D, Drain Current [A] 1 10 1 ms 10 ms DC 0 10 Notes : 4 3 2 o 1. TC = 25 C 1 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area JC 75 100 125 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 N o te s : 1 . Z J C ( t) = 2 .8 4 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 10 -5 t1 s i n g l e p u ls e Z -I D, Drain Current [A] 0 TJ, Junction Temperature [ C] 10 -4 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD8P10TM-F085 100V P-Channel MOSFET Typical Characteristics FQD8P10TM-F085 100V P-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp VDD VDS (t) ID (t) IAS BVDSS www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQD8P10TM-F085 100V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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