FEATURES
●Surge overload rating -240~400 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique
●Plastic material has U/L
flammability classification 94V-0
●Mounting postition:Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 30 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 5.0/7.5/12.5A DC VFV
Maximum DC Reverse Current @ TJ=25℃
at Rated DC Blocking Voltage @ TJ=125℃
I2t Rating for Fusing (t<8.3ms) I2t A2s
Typical Junction Capacitance Per Element (Note1) CJpF
Typical Thermal Resistance (Note2) RθJC ℃/W
Operating Temperature Range TJ℃
Storage Temperature Range TSTG ℃
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.
~ 287 ~
GBU10/15/25(C)SERIES
A
IR
1.1
I(AV)
-55 to +150
10 uA
A
-55 to +125
IFSM
200
70
2.2
500
Rating at 25℃ ambient temperature unless otherwise specified.
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 10/15/25 Amperes
Dimensions in inches and (milimeters)
SILICON BRIDGE RECTIFIERS
SYMBOL UNIT
CHARACTERISTICS
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
GBU-C
GBU
10C
25
400
GBU
15C GBU
25C
1510
.018(.46)
.022(.56)
.126(3.2)
.114(2.9)
.156(3.95)
.148(3.75)
.190
.210
(4.8)
(5.3)(5.3)
(4.8)
.210
.190.190
.210
(4.8)
(5.3)
.080(2.03)
.065(1.65)
.085(2.16)
.100(2.54)
.047(1.2)
.035(0.9)
.680(17.27)
.720(18.29)
.752(19.1)
.720(18.3)
CHAMFER
3.2*3.2
.232(5.9)
.224(5.7)
.154(3.9)
.146(3.7)
.860(21.8)
.874(22.2)
.063(1.6)
.079(2.0)