N-Channel QFET(R) MOSFET 600V, 0.2 A, 11.5 Features Description * 0.2 A, 600 V, RDS(on)=9.3 (7\S.)@VGS=10 V, ID=0.1 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. nC) * Low Crss (Typ. pF) * 100% Avalanche Tested * RoHS Compliant D D S G G SOT-223 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FQT1N60C 600 Unit V 30 V -Continuous (TC = 25oC) 0.2 -Continuous (TC = 100oC) - Pulsed A 0.12 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 0.2 A EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns 0.8 A (Note 2) 33 mJ (Note 3) 25oC) 2.1 W 0.02 W/oC -55 to +150 oC 300 oC (TA = - Derate above 25oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds TL (Note 1) Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction to Ambient* Min. Max. - 60 Unit oC/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2007 Semiconductor Components Industries, LLC. July-2018,Rev. 4 Publication Order Number: FQT1N60C/D FQT1N60C N-Channel MOSFET FQT1N60C Device Marking FQT1N60C Device FQT1N60C Package SOT-223 Reel Size 330mm Tape Width 12mm Quantity 4000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V ID = 250A, Referenced to 25 C - 0.6 - V/oC VDS = 600V, VGS = 0V Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC o - - 25 VDS = 480V, TC = 125oC - - 250 VGS = 30V, VDS = 0V - - 100 2.0 - 4.0 V - 9.3 11.5 - 0.75 - S A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A Static Drain to Source On Resistance VGS = 10V, ID = 0.1A gFS Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 480V, ID = 1A VGS = 10V (Note 4, 5) - 130 170 pF - 19 25 pF - 3.5 6 pF - 4.8 6.2 nC - 0.7 - nC - 2.7 - nC - 7 24 ns - 21 52 ns - 13 36 ns - 27 64 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 1A RG = 25 (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 0.2A - - 1.4 V trr Reverse Recovery Time - 190 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 1A dIF/dt = 100A/s - 0.53 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 0.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 (Note 4) FQT1N60C N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FQT1N60C N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V 0 ID, Drain Current [A] 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o -55 C o 25 C Notes : 1. 250s Pulse Test 2. TC = 25 -1 10 -2 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 25 VGS = 10V 20 15 VGS = 20V 10 5 Note : TJ = 25 0 0.0 0.5 1.0 1.5 2.0 2.5 I DR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 30 0 10 150 -1 10 0.2 0.4 Figure 5. Capacitance Characteristics 1.0 1.2 1.4 Figure 6. Gate Charge Characteristics Ciss 150 Coss 100 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 200 Capacitance [pF] 0.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 50 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] 250 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 1A 0 -1 10 0 0 10 1 10 0 1 2 3 4 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 5 6 FQT1N60C N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.1 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 0.20 Operation in This Area is Limited by R DS(on) 0.18 0 0.16 100 s ID, Drain Current [A] 1 ms 10 ms -1 100 ms 10 1s DC -2 10 Notes : 0.14 0.12 0.10 0.08 0.06 o 1. TC = 25 C 0.04 o 2. TJ = 150 C 3. Single Pulse 0.02 -3 10 0 10 1 2 10 0.00 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 TC, Case Temperature [C] Figure 11. Transient Thermal Response Curve 10 2 D = 0 .5 Z JC(t), Thermal Response ID, Drain Current [A] 10 10 N o te s : 1 . Z J C( t) = 6 0 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t) 0 .2 1 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 0 .0 1 t2 s in g le p u ls e 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] www.onsemi.com 4 10 2 10 3 125 150 Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FQT1N60C N-Channel MOSFET Gate Charge Test Circuit & Waveform FQT1N60C N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V SD B o d y D io d e F o r w a r d V o lta g e D r o p www.onsemi.com 6 V DD FQT1N60C N-Channel MOSFET Mechanical Dimensions 3.00 0.10 4.60 0.25 6.50 0.20 (0.89) (0.95) (0.46) 1.60 0.20 2.30 TYP 0.70 0.10 (0.95) www.onsemi.com 7 10 +0.10 0.25 -0.05 0~ 7.00 0.30 (0.60) +0.04 0.06 -0.02 (0.60) 3.50 0.20 1.75 0.20 MAX1.80 0.65 0.20 0.08MAX SOT-223 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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