InAsSb photodiode
Infrared detector in the 5 μm spectral band,
with high sensitivity and high reliability
P11120-901
www.hamamatsu.com 1
The P11120-901 is an infrared detector that provides high sensitivity in the 5 m spectral band due to our unique crystal growth
technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high
reliability. Typical applications include gas analysis such as CO2, SOx, CO and NOx. HAMAMATSU also manufactures detector
elements with peak sensitivity at longer wavelengths by changing the composition ratio of As and Sb.
Features Applications
High speed response Gas analysis
Thermometers (radiometers)
Thermal imaging
Remote sensing
FTIR
Spectrophotometry
High sensitivity
High reliability
Specifications
Absolute maximum ratings
Electrical and optical characteristics
Parameter Specification Unit
Window material Si with AR coated
-
Package Metal dewar
-
Cooling Liquid nitrogen
-
Active area
φ
1.0
mm
Parameter Symbol Value Unit
Reverse voltage VR0.1
V
Operating temperature Topr -40 to +60
°C
Strage temperature Tstg -55 to +60
°C
Parameter Symbol Condition Min. Typ. Max. Unit
Peak sensitivity wavelength
λ
p4.6 4.8 5.2
m
Cut-off wavelength
λ
c5.6 5.8
-m
Photo sensitivity S 0.7 0.8
-
A/W
Shunt resistance Rsh 7
×
10
4
1
×
10
5
-
Ω
Detectivity D
*
(λp, 1200, 1)
6.0
×
10
10
8.5
×
10
10
-
cm·Hz1/2/W
Noise equivalent power NEP
λ
=
λ
p
-
1.1
×
10
-12
1.5
×
10
-12
W/Hz
1/2
Rise time tr
-
200 300 ns
InAsSb photodiode P11120-901
2
243 56
109
1010
1011
Wavelength (µm)
D* (cm · Hz1/2/W)
C-H type CO2, SOXCO NOX
Chopper
1200 Hz
Black body
500 K
Detector
Band-pass
filter
r.m.s.
meter
fo=1200 Hz
Δf=120 Hz
Incident energy 2.64 µW/cm2
Spectral response
KIRDB0430EA
Measurement circuit example
KIRDC0004EA
Cat. No. KIRD1110E01 Mar. 2010 DN
InAsSb photodiode P11120-901
www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
51 ± 1
32 ± 1
46 ± 1
44.5 ± 1
37 ± 1
10 ± 0.5
6.5
72 ± 1
95 ± 1
102 ± 1
66.8 ± 1
10 ± 1
172 ± 2
28.5
63.5 ± 1
LN2 fill port 12.5
Photosensitive
surface
Signal
output lead
Pump-out pipe 9.5
Detector (anode)
NC
Detector (cathode)
Dimensional outline (unit: mm)
KIRDA0190EC
3
