03/16/07
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For footnotes refer to the last page
Seventh Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
Features:
nLow RDS(on)
nAvalanche Energy Ratings
nDynamic dv/dt Rating
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nLight Weight
SMD-1
* Current is limited by package
n Surface Mount
PD - 94643A
IRF7N1405
55V, N-CHANNEL
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number BVDSS RDS(on) ID
IRF7N1405 55V 0.0053Ω55A*
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 55*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 55*
IDM Pulsed Drain Current À 220
PD @ TC = 25°C Max. Power Dissipation 100 W
Linear Derating Factor 0.8 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á 245 mJ
IAR Avalanche Current À 55 A
EAR Repetitive Avalanche Energy À 10 mJ
dv/dt Peak Diode Recovery dv/dt  1.8 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temp. 300 (for 5s)
Weight 2.6 (Typical) g
oC
A
IRF7N1405
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 55 — — V VGS = 0V, ID = 250µA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.061 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.0053 ΩVGS = 10V, ID = 55A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 68 — — S VDS =25V, IDS = 55A Ã
IDSS Zero Gate Voltage Drain Current — — 25 VDS = 55V ,VGS=0V
— — 250 VDS = 44V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 200 VGS =10V, ID = 55A
Qgs Gate-to-Source Charge — — 40 nC VDS = 44V
Qgd Gate-to-Drain (‘Miller’) Charge — — 80
td(on) Turn-On Delay Time — — 20 VDD = 28V, ID = 55A,
trRise Time — — 90 VGS = 10V, RG = 2.4Ω
td(off) Turn-Off Delay Time — — 200
tfFall Time — — 150
LS + LDTotal Inductance — 4.0 — Measured from the center of drain
l pad to the center of source pad
Ciss Input Capacitance — 5100 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1290 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 300 —
nA
Ã
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 1.25 °C/W
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 55*
ISM Pulse Source Current (Body Diode) À— — 220
VSD Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 55A, VGS = 0V Ã
trr Reverse Recovery Time — — 130 ns Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 380 nC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
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IRF7N1405
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
55A
44.555.566.57
VGS, Gate-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (Α)
VDS = 25V
20µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
IRF7N1405
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
1500
3000
4500
6000
7500
9000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
0 20 40 60 80 100 120 140
QG Total Gate Charge (nC)
0
4
8
12
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 55A
FOR TEST CIRCUIT
SEE FIGURE 13
0.1 1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD , Reverse Drain Current (Α)
VGS = 0V
TJ = 150°C
TJ = 25°C
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IRF7N1405
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRF7N1405
6www.irf.com
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
10V
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
tp
V
(BR)DSS
I
AS
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
25 50 75 100 125 150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
24.6A
34.8A
55A
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IRF7N1405
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ISD ≤ 55A, di/dt ≤ 220A/µs,
VDD ≤ 55V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD = 25 V, Starting TJ = 25°C, L= 0.16mH
Peak IAS = 55A, VGS = 10V, RG= 25Ω
Footnotes:
PAD ASSIGNMENTS
Case Outline and Dimensions — SMD-1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2007
