© 2000 IXYS All rights reserved 1 - 2
VRSM VRRM Type
VV
1200 1200 VUO 125-12NO7
1400 1400 VUO 125-14NO7
1600 1600 VUO 125-16NO7
1800 1800 VUO 125-18NO7*
* delivery time on request
Symbol Test Conditions Maximum Ratings
IdAVM TC = 85°C, module 166 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1800 A
VR = 0 t = 8.3 ms (60 Hz), sine 1950 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1600 A
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 16200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 16000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 12800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 13600 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL £ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ± 15 % Nm
44 ± 15 % lb.in.
Terminal connection torque (M5) 5 ± 15 % Nm
44 ± 15 % lb.in.
Weight typ. 225 g
IdAVM = 166 A
VRRM = 1200-1800 V
Features
●Package with screw terminals
●Isolation voltage 3000 V~
●Planar passivated chips
●Blocking voltage up to 1800 V
●Low forward voltage drop
●UL registered E 72873
Applications
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Battery DC power supplies
●Field supply for DC motors
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
Symbol Test Conditions Characteristic Values
IRVR = VRRM;T
VJ = 25°C£0.3 mA
VR = VRRM;T
VJ = TVJM £8.0 mA
VFIF = 150 A; TVJ = 25°C£1.3 V
VT0 For power-loss calculations only 0.8 V
rT3mW
RthJC per diode 0.83 K/W
per module 0.138 K/W
RthJH per diode 1.13 K/W
per module 0.188 K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
VUO 125
Three Phase
Rectifier Bridge
-+
~
~~
~
~
~
–
+
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© 2000 IXYS All rights reserved 2 - 2
VUO 125
Fig. 6 Transient thermal impedance per diode
Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms)
voltage drop per diode IFSM: Crest value. t: duration per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.014 0.011
2 0.067 0.094
3 0.139 0.28
4 0.61 0.7
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.014 0.011
2 0.067 0.094
3 0.139 0.28
4 0.61 0.7
50.3 4.2
I2t
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