TSOP62..
Vishay Semiconductors
1 (10)
www.vishay.comDocument Number 82177
Rev . 1, 08–Nov–01
IR Receiver Module for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type fo Type fo
TSOP6230 30 kHz TSOP6233 33.0 kHz
TSOP6236 36 kHz TSOP6237 36.7 kHz
TSOP6238 38 kHz TSOP6240 40.0 kHz
TSOP6256 56 kHz
Description
The TSOP62.. – series are miniaturized SMD–IR
Receiver Modules for infrared remote control systems.
PIN diode and preamplifier are assembled on lead
frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP62.. is the
standard IR remote control SMD–Receiver series,
supporting all major transmission codes. 16797
Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Continuous data transmission possible
TTL and CMOS compatibility
Output active low
Low power consumption
High immunity against ambient light
Suitable burst length 10 cycles/burst
Taping available for topview and sideview
assembly
Block Diagramm
16627
PIN
Input
AGC
Control
Circuit
Band
Pass Demodu-
lator
30 k
1
3
4
VS
OUT
GND
TSOP62..
Vishay Semiconductors
www.vishay.com
2 (10) Rev . 1, 08–Nov–01
Document Number 82177
Absolute Maximum Ratings
Tamb = 25°C Parameter Test Conditions Symbol Value Unit
Supply Voltage Pin 3 VS–0.3...6.0 V
Supply Current Pin 3 IS5 mA
Output Voltage Pin 4 VO–0.3...6.0 V
Output Current Pin 4 IO15 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg –40...+85 °C
Operating Temperature Range Tamb –25...+85 °C
Power Consumption Tamb 85°C Ptot 50 mW
Basic Characteristics
Tamb = 25°C
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Supply Current VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA
Supply Current VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA
Supply Voltage VS 4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.7,
IR diode TSAL6200, IF = 400 mA d 35 m
Output Voltage Low (Pin 4) IOSL = 0.5 mA,Ee = 0.7 mW/m2VOSL 250 mV
Irradiance (30–40 kHz) Pulse width tolerance:
t 5/f <t <t + 6/f
Ee min 0.35 0.5 mW/m2
Irradiance (56 kHz) tpi – 5
/f
o < tpo < tpi + 6
/f
o,
test signal see fig.7 Ee min 0.4 0.6 mW/m2
Irradiance tpi – 5/fo < tpo < tpi + 6/foEe max 30 W/m2
Directivity Angle of half transmission distance ϕ1/2 ±50 deg
Application Circuit
16630
TSAL62..
TSOP62.. 3
4
1
4.7 F *)
C
>10 k
optional
100 *) +5V
GND
2GND
*) recommended to suppress power supply disturbances
**) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
**)
TSOP62..
Vishay Semiconductors
3 (10)
www.vishay.comDocument Number 82177
Rev . 1, 08–Nov–01
Suitable Data Format
The circuit of the TSOP62.. is designed in that way that
unexpected output pulses due to noise or disturbance
signals are avoided. A bandpassfilter, an integrator
stage and an automatic gain control are used to
suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
•Carrier frequency should be close to center
frequency of the bandpass (e.g. 38kHz).
•Burst length should be 10 cycles/burst or longer.
•After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is
necessary.
•For each burst which is longer than 1.8ms a
corresponding gap time is necessary at some time
in the data stream. This gap time should be at least
4 times longer than the burst.
•Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are:
NEC Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the TSOP62..
it can still receive the data signal. However the
sensitivity is reduced to that level that no unexpected
pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP62.. are:
•DC light (e.g. from tungsten bulb or sunlight)
•Continuous signal at 38kHz or at any other
frequency
•Signals from fluorescent lamps with electronic
ballast with high or low modulation (see Figure A or
Figure B).
0 5 10 15 20
time [ms]
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0 5 10 15 20
time [ s ]
Figure B: IR Signal from Fluorescent Lamp with high Modulation
TSOP62..
Vishay Semiconductors
www.vishay.com
4 (10) Rev . 1, 08–Nov–01
Document Number 82177
Typical Characteristics (Tamb = 25C, unless otherwise specified)
0.7 0.8 0.9 1.0 1.1
E / E – Rel. Responsitivity
e min
f/f0 – Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
e
1.2
f = f05%
f ( 3dB ) = f0/10
Figure 1. Frequency Dependence of Responsivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )96 12110
po
t – Output Pulse Length (ms)
Input burst duration
= 950 nm,
optical test signal, fig.7
Figure 2. Sensitivity in Dark Ambient
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.10 1.00 10.00 100.00
E – DC Irradiance (W/m2)96 12111
e min
E – Threshold Irradiance (mW/m )
2
Correlation with ambient light sources
(Disturbanceeffect):10W/m21.4klx
(Stand.illum.A,T=2855K)8.2klx
(Daylight,T=5900K)
Ambient, = 950 nm
Figure 3. Sensitivity in Bright Ambient
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0
E – Field Strength of Disturbance (kV/m)16802
e min
E – Threshold Irradiance (mW/m )
2
Figure 4. Threshold Irradiance vs.
Field Strength of Disturbance
0.01 0.1 1 10 100
0.1
1
10
1000
94 9106 VsRMS – AC Voltage on DC Supply Voltage (mV)
E – Threshold Irradiance ( mW/m )
e min 2
f = f0
10 kHz
100 Hz
1 kHz
Figure 5. Sensitivity vs. Supply Voltage Disturbances
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30–150 153045607590
Tamb – Ambient Temperature ( °C )96 12112
e min
E – Threshold Irradiance (mW/m )
2
Sensitivity in dark ambient
Figure 6. Sensitivity vs. Ambient Temperature
TSOP62..
Vishay Semiconductors
5 (10)
www.vishay.comDocument Number 82177
Rev . 1, 08–Nov–01
Ee
T
tpi *
t
* tpi 10/fo is recommended for optimal function
VO
VOH
VOL t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
td1 )tpo2 )
1 ) 7/f0 < td < 15/f0
2 ) tpo = tpi 6/f0
Figure 7. Output Function
Ee
t
VO
VOH
VOL t
600 s 600 s
T = 60 ms
Ton Toff
94 8134
Optical Test Signal
Output Signal, ( see Fig.10 )
Figure 8. Output Function
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10 20 30 40 50 60 70 80 90
Burstlength [number of cycles/burst]16156
Envelope Duty Cycle
f = 38 kHz
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance (mW/m2)96 12114
on off
T ,T – Output Pulse Length (ms)
Ton
= 950 nm,
optical test signal, fig.8
Toff
Figure 10. Output Pulse Diagram
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) – Relative Spectral Sensitivity
rel
– Wavelength ( nm )
1150
94 8408
1.0
Figure 11. Relative Spectral Sensitivity vs. Wavelength
16801
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
drel – Relative Transmission Distance
Figure 12. Directivity
TSOP62..
Vishay Semiconductors
www.vishay.com
6 (10) Rev . 1, 08–Nov–01
Document Number 82177
Operating Instructions
Reflow Soldering
Reflow soldering must be done within 48 hours
stored under max. 30°C, 80% RH after opening
envelop
Recommended soldering paste
(composition: SN 63%, Pb 37%)
Melting temperature 178 to 192°C
Apply solder paste to the specified soldering
pads, by using a dispenser or by screen printing.
Recommended thickness of metal mask is 0.2 mm
for screen printing.
The recommended reflow furnace is a
combinationtype with upper and lower heaters.
Set the furnace temperatures for pre-heating and
heating in accordance with the reflow temperature
profile as shown below. Excercise extreme care to
keep the maximum temperature below 230C. The
following temperature profile means the tempera–
ture at the device surface. Since temperature dif fer–
ence occurs between the work and the surface of
the circuit board depending on the pes of circuit
board or reflow furnace, the operating conditions
should be verified prior to start of operation.
Handling after reflow should be done only after the
work surface has been cooled off.
Manual Soldering
Use the 6/4 solder or the solder containing silver.
Use a soldering iron of 25 W or smaller. Adjust the
temperature of the soldering iron below 300C.
Finish soldering within three seconds.
Handle products only after the temperature is
cooled off.
Cleaning
Perform cleaning after soldering strictly in
conformance to the following conditions:
Cleaning agent:
2-propanol (isopropyl alcohol).
Commercially available grades (industrial
use) should be used.
Demineralized or distilled water having a
resistivity of not less than 500 m
corresponding to a conductivity of 2 mS/m.
Temperature and time: 30 seconds under the
temperature below 50C or 3 minutes below 30C.
Ultrasonic cleaning: Below 20 W.
94 8625
max. 1 6 0 °C
full line : typical
dotted line: process limits
max. 240°C
2 K/s – 4 K/s
ca. 230°C
215°C
10 s
50
100
150
200
250
300
0 50 100 150 200 250
Time ( s )
Temperature ( C )
°
Lead Temperature
90 s – 120 s
max. 40 s
TSOP62..
Vishay Semiconductors
7 (10)
www.vishay.comDocument Number 82177
Rev . 1, 08–Nov–01
Dimensions in mm
16629
TSOP62..
Vishay Semiconductors
www.vishay.com
8 (10) Rev . 1, 08–Nov–01
Document Number 82177
Taping Version TSOP62..TT
16584
TSOP62..
Vishay Semiconductors
9 (10)
www.vishay.comDocument Number 82177
Rev . 1, 08–Nov–01
Taping Version TSOP62..TR
16585
TSOP62..
Vishay Semiconductors
www.vishay.com
10 (10) Rev . 1, 08–Nov–01
Document Number 82177
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
