TSOP62.. Vishay Semiconductors IR Receiver Module for PCM Remote Control Systems Available Types For Different Carrier Frequencies Type TSOP6230 TSOP6236 TSOP6238 TSOP6256 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP6233 TSOP6237 TSOP6240 fo 33.0 kHz 36.7 kHz 40.0 kHz Description The TSOP62.. - series are miniaturized SMD-IR Receiver Modules for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP62.. is the standard IR remote control SMD-Receiver series, supporting all major transmission codes. 16797 Features Photo detector and preamplifier in one package Low power consumption Internal filter for PCM frequency High immunity against ambient light Continuous data transmission possible Suitable burst length 10 cycles/burst TTL and CMOS compatibility Taping available for topview and sideview assembly Output active low Block Diagramm 3 Control Circuit Input 30 k 4 PIN AGC Band Pass VS Demodulator OUT 1 GND 16627 Document Number 82177 Rev. 1, 08-Nov-01 www.vishay.com 1 (10) TSOP62.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25C Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Test Conditions Symbol VS IS VO IO Tj Tstg Tamb Ptot Pin 3 Pin 3 Pin 4 Pin 4 Tamb 85C Value -0.3...6.0 5 -0.3...6.0 15 100 -40...+85 -25...+85 50 Unit V mA V mA C C C mW Basic Characteristics Tamb = 25C Parameter Supply Current Supply Current Supply Voltage Transmission Distance Test Conditions VS = 5 V, Ev = 0 VS = 5 V, Ev = 40 klx, sunlight Symbol ISD ISH VS d Ev = 0, test signal see fig.7, IR diode TSAL6200, IF = 400 mA Output Voltage Low (Pin 4) IOSL = 0.5 mA,Ee = 0.7 mW/m2 Irradiance (30-40 kHz) Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, Irradiance (56 kHz) test signal see fig.7 Irradiance tpi - 5/fo < tpo < tpi + 6/fo Directivity Angle of half transmission distance VOSL Ee min Ee min Ee max 1/2 Min. 0.8 Typ. 1.1 1.4 4.5 Max. 1.5 5.5 35 Unit mA mA V m 0.35 250 0.5 mV mW/m 2 0.4 0.6 mW/m 2 W/m 2 deg 30 50 Application Circuit 100 *) 3 TSOP62.. TSAL62.. 4.7 F *) >10 k optional 4 2 GND +5V C **) 1 16630 GND *) recommended to suppress power supply disturbances **) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit. www.vishay.com 2 (10) Document Number 82177 Rev. 1, 08-Nov-01 TSOP62.. Vishay Semiconductors Suitable Data Format The circuit of the TSOP62.. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fullfill the following condition: * Carrier frequency should be close to center frequency of the bandpass (e.g. 38kHz). * Burst length should be 10 cycles/burst or longer. * After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. * For each burst which is longer than 1.8ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 4 times longer than the burst. * Up to 800 short bursts per second can be received continuously. 0 5 Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code. When a disturbance signal is applied to the TSOP62.. it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occure. Some examples for such disturbance signals which are suppressed by the TSOP62.. are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signal at 38kHz or at any other frequency * Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure A or Figure B). 10 15 20 time [ms] Figure A: IR Signal from Fluorescent Lamp with low Modulation 0 5 10 15 20 time [s] Figure B: IR Signal from Fluorescent Lamp with high Modulation Document Number 82177 Rev. 1, 08-Nov-01 www.vishay.com 3 (10) TSOP62.. Vishay Semiconductors Typical Characteristics (Tamb = 25C, unless otherwise specified) 0.8 0.6 0.4 0.2 f = f05% f ( 3dB ) = f0/10 0.0 0.7 0.8 0.9 1.0 1.1 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.3 1.2 f/f0 - Relative Frequency 94 8143 4.0 E e min - Threshold Irradiance (mW/m2 ) eE min /e E - Rel. Responsitivity 1.0 0.0 Figure 1. Frequency Dependence of Responsivity tpo - Output Pulse Length (ms) 0.9 0.8 Input burst duration 0.7 0.6 0.5 = 950 nm, optical test signal, fig.7 0.4 0.3 0.2 0.1 1.0 96 12110 10.0 100.0 1000.0 10000.0 Ee - Irradiance ( mW/m2 ) 5.0 Correlation with ambient light sources (Disturbanceeffect):10W/m21.4klx (Stand.illum.A,T=2855K)8.2klx (Daylight,T=5900K) 4.5 4.0 3.5 3.0 2.5 2.0 Ambient, = 950 nm 1.5 1.0 0.5 0.0 0.01 96 12111 0.10 1.00 10.00 E - DC Irradiance (W/m2) 100.00 Figure 3. Sensitivity in Bright Ambient www.vishay.com 4 (10) 2.0 f = f0 1 kHz 10 kHz 1 100 Hz 0.1 0.01 0.1 1 10 100 1000 VsRMS - AC Voltage on DC Supply Voltage (mV) 94 9106 Figure 5. Sensitivity vs. Supply Voltage Disturbances E e min - Threshold Irradiance (mW/m2 ) E e min - Threshold Irradiance (mW/m2 ) Figure 2. Sensitivity in Dark Ambient 1.5 10 0.0 0.1 1.0 Figure 4. Threshold Irradiance vs. Field Strength of Disturbance Ee min - Threshold Irradiance ( mW/m2 ) 1.0 0.5 E - Field Strength of Disturbance (kV/m) 16802 1.0 0.9 0.8 Sensitivity in dark ambient 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -30 -15 0 15 30 45 60 75 96 12112 Tamb - Ambient Temperature ( C ) 90 Figure 6. Sensitivity vs. Ambient Temperature Document Number 82177 Rev. 1, 08-Nov-01 TSOP62.. Vishay Semiconductors Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * T * tpi 10/fo is recommended for optimal function Output Signal VO 1) 2) VOH 16110 7/f0 < td < 15/f0 tpo = tpi 6/f0 1.0 Ton ,Toff - Output Pulse Length (ms) Ee 0.9 0.8 Ton 0.7 0.6 0.5 Toff 0.4 0.3 = 950 nm, optical test signal, fig.8 0.2 0.1 0.0 0.1 VOL td1 ) t tpo2 ) 100.0 1000.0 10000.0 t 600 s T = 60 ms 94 8134 Output Signal, ( see Fig.10 ) VOH S ( )rel - Relative Spectral Sensitivity Optical Test Signal 600 s VO 10.0 Figure 10. Output Pulse Diagram Figure 7. Output Function Ee 1.0 Ee - Irradiance (mW/m2) 96 12114 1.2 1.0 0.8 0.6 0.4 0.2 0 750 VOL Ton t Toff 850 950 1150 1050 - Wavelength ( nm ) 94 8408 Figure 11. Relative Spectral Sensitivity vs. Wavelength Figure 8. Output Function 0 10 20 30 0.8 f = 38 kHz Envelope Duty Cycle 0.7 0.6 40 0.5 1.0 0.4 0.9 50 0.3 0.8 60 0.2 70 0.7 80 0.1 0.0 10 16156 20 30 40 50 60 70 80 Burstlength [number of cycles/burst] Figure 9. Max. Envelope Duty Cycle vs. Burstlength Document Number 82177 Rev. 1, 08-Nov-01 0.6 90 16801 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance Figure 12. Directivity www.vishay.com 5 (10) TSOP62.. Vishay Semiconductors Operating Instructions Reflow Soldering Reflow soldering must be done within 48 hours stored under max. 30C, 80% RH after opening envelop Recommended soldering paste (composition: SN 63%, Pb 37%) Melting temperature 178 to 192C Apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. Recommended thickness of metal mask is 0.2 mm for screen printing. The recommended reflow furnace is a combinationtype with upper and lower heaters. Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. Excercise extreme care to keep the maximum temperature below 230C. The following temperature profile means the tempera- ture at the device surface. Since temperature differ- ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. Handling after reflow should be done only after the work surface has been cooled off. Manual Soldering Use the 6/4 solder or the solder containing silver. Use a soldering iron of 25 W or smaller. Adjust the temperature of the soldering iron below 300C. Finish soldering within three seconds. Handle products only after the temperature is cooled off. Cleaning Perform cleaning after soldering strictly in conformance to the following conditions: Cleaning agent: 2-propanol (isopropyl alcohol). Commercially available grades (industrial use) should be used. Demineralized or distilled water having a resistivity of not less than 500 m corresponding to a conductivity of 2 mS/m. Temperature and time: 30 seconds under the temperature below 50C or 3 minutes below 30C. Ultrasonic cleaning: Below 20 W. 94 8625 300 max. 240C 10 s ca. 230C 250 215C Temperature ( C ) 200 150 max. 160C max. 40 s 100 90 s - 120 s full line : typical dotted line : process limits 50 2 K/s - 4 K/s 0 50 Lead Temperature 100 150 200 250 Time ( s ) www.vishay.com 6 (10) Document Number 82177 Rev. 1, 08-Nov-01 TSOP62.. Vishay Semiconductors Dimensions in mm 16629 Document Number 82177 Rev. 1, 08-Nov-01 www.vishay.com 7 (10) TSOP62.. Vishay Semiconductors Taping Version TSOP62..TT 16584 www.vishay.com 8 (10) Document Number 82177 Rev. 1, 08-Nov-01 TSOP62.. Vishay Semiconductors Taping Version TSOP62..TR 16585 Document Number 82177 Rev. 1, 08-Nov-01 www.vishay.com 9 (10) TSOP62.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 (10) Document Number 82177 Rev. 1, 08-Nov-01