AO4492 30V N-Channel MOSFET General Description Product Summary The AO4492 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) 30V 14A RDS(ON) (at VGS=10V) < 9.5m RDS(ON) (at VGS = 4.5V) < 14m 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Units V 20 V 14 ID TA=70C C Maximum 30 11.4 A IDM 100 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C TA=25C EAS, EAR 20 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Nov 2011 3.1 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 2 RJA RJL -55 to 150 Typ 31 59 16 www.aosmd.com C Max 40 75 24 Units C/W C/W C/W Page 1 of 6 AO4492 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS= 20V VDS=VGS ID=250A 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 100 100 nA 1.7 2.2 V 7.6 9.5 11 13 VGS=4.5V, ID=11A 11 14 m 43 1 V 3 A VGS=10V, ID=14A Static Drain-Source On-Resistance TJ=125C gFS Forward Transconductance VDS=5V, ID=14A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance A 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz m S 770 pF 240 pF 77 pF 0.8 1.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14.8 18 nC Qg(4.5V) Total Gate Charge 7.1 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=14A VGS=10V, VDS=15V, RL=1.05, RGEN=3 0.4 2.2 nC 3.1 nC 5 ns 3 ns 18 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=14A, dI/dt=500A/s 11 Qrr Body Diode Reverse Recovery Charge IF=14A, dI/dt=500A/s 23 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Nov 2011 www.aosmd.com Page 2 of 6 AO4492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 5V VDS=5V 50 4.5V 80 7V 40 60 ID(A) ID (A) 4V 40 3.5V 30 20 20 125C 10 25C VGS=3.0V 0 0 0 1 2 3 4 0 5 14 2 3 4 5 Normalized On-Resistance 1.8 12 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 10 8 VGS=10V 6 VGS=10V ID=14A 1.6 1.4 17 5 2 10 =4.5V 1.2 VGS ID=11A 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=14A 1.0E+01 25 40 1.0E+00 125C IS (A) RDS(ON) (m ) 20 15 10 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 5 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=14A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 Coss 400 200 0 Crss 0 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics 100 16 0 TA=25C 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 IAR (A) Peak Avalanche Current TA=100C 80 60 TA=150C TA=125C 40 ID (Amps) 100.0 10.0 10s 100s RDS(ON) limited 1ms 1.0 10ms TJ(Max)=150C TA=25C 0.1 20 10s DC 0.0 0 1 0.01 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 4: Nov 2011 www.aosmd.com Page 4 of 6 AO4492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Nov 2011 www.aosmd.com Page 5 of 6 AO4492 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 4: Nov 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6