Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
48 62.5
74 110
RθJL 35 40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Maximum Units
V
Gate-Source Voltage ±20 V
ID
-6
Drain-Source Voltage -30
TA=25°C PD
2
A
TA=70°C -5
Pulsed Drain Current B-30
Continuous Drain
Current A
TA=25°C
Maximum Junction-to-Ambient
A
Steady-State °C/W
W
TA=70°C 1.44
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation A
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -6 A (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -10V)
RDS(ON) < 58mΩ (VGS = -4.5V)
General Description
The AO4807 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
A
O4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1 G2
D2
S2
AO4807
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1.2 -2 -2.4 V
ID(ON) -30 A
28 35
TJ=125°C 37 45
44 58 m
Ω
gFS 13 S
VSD -0.76 -1 V
IS-4.2 A
Ciss 920 pF
Coss 190 pF
Crss 122 pF
Rg3.6 Ω
Qg(10V) 18.5 nC
Qg(4.5V) 9.6 nC
Qgs 2.7 nC
Qgd 4.5 nC
tD(on) 7.7 ns
tr5.7 ns
tD(off) 20.2 ns
tf9.5 ns
trr 20 ns
Qrr 8.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6A
Reverse Transfer Capacitance
IF=-6A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=-4.5V, ID=-5A
IS=-1A,VGS=0V
VDS=-5V, ID=-6A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-6A
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3V
-6V
-3.5V
-4V
-10V
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.80
1.00
1.20
1.40
1.60
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
VGS=-4.5V
20
30
40
50
60
70
80
90
100
345678910
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-6A
25°C
125°C
ID=-6A
-4.5V
-5V
Alpha & Omega Semiconductor, Ltd.
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
048121620
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
250
500
750
1000
1250
1500
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
0.1s
1s
10s DC
RDS(ON)
limited
TJ
(
Max
)
=150°C, T
A
=25°C
VDS=-15V
ID=-6A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
o
nT
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10µs
Alpha & Omega Semiconductor, Ltd.
