ECH8306
No. A0302-1/4
80906 / 12506PE MS IM TB-00001929
ECH8306 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•4V dri ve.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID-- 2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --12 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 V
Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--1A 2.9 4.9 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--1A, VGS=--10V 170 225 mΩ
RDS(on)2 ID=--0.5A, VGS=--4V 195 275 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 1600 pF
Output Capacitance Coss VDS=--20V, f=1MHz 85 pF
Reverse T ransfer Capacitance Crss VDS=--20V, f=1MHz 72 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13.5 ns
Rise Time trSee specified Test Circuit. 10 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall T ime tfSee specified Test Circuit. 54 ns
Total Gate Charge Qg VDS=--50V, VGS=--10V, ID=--2A 33 nC
Gate-to-Source Charge Qgs VDS=--50V, VGS=--10V, ID=--2A 3.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--50V, VGS=--10V, ID=--2A 6.0 nC
Diode Forward Voltage VSD IS=--2A, VGS=0V --0.8 --1.2 V
Marking : JH
Ordering number : ENA0302
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
ECH8306
No. A0302-2/4
Package Dimensions Electrical Connection
unit : mm
7011A-002
Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1A
RL=50Ω
VDD= --50V
VOUT
ECH8306
VIN
0V
--10V
VIN
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
14
85
0.15
0 to 0.02
0.25
0.25 2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
--1
--2
--3
--4
0
0
--0.5
--1.0
--1.5
--2.0
0
--1.0--0.7 --0.8 --0.9--0.5--0.1 --0.2 --0.3 --0.4 --0.6
IT10633
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5
IT10634
VGS= --2.5V
--3.0V
--10.0V
--4.0V
--5.0V
--8.0V
--15.0V
VDS= --10V
25°C
Ta=75
°
C
--25
°
C
8765
1234
Top view
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8306
No. A0302-3/4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ambient Temperature, Ta --
°C
RDS(on) -- Ta
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
yfs-- ID
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--60 --40 --20 0 20 40 60 80 100 120 140 160
0 --2 --4 --6 --8 --10 --12 --14 --16
IT10635
400
350
300
250
200
150
50
100
0
IT10636
400
350
300
250
200
150
100
50
0
IT10637
--0.01 --0.1
23 57 2 --1.0
357 2357
1.0
0.1
7
2
5
3
2
10
7
5
3
IT10642
2
2
3
2
3
5
7
--0.1
2
3
5
7
--1.0
--0.01 --0.1--0.01 5723 2 --1.0
5732
--10
5732
--100
5732
0
0355
--10
IT10641
10 15 20 25 30
--1
--2
--3
--4
--5
--6
--7
--8
--9
VDS= --50V
ID= --2A
Ta=25
°
C
ID= --0.5A
--1A
ID= --0.5A, VGS= --4V
ID= --1.0A, VGS= --10V
VDS= --10V
Ta= --25°C
75°C
25
°
C
IDP= --12A
ID= --2A
≤10µs
1ms
10ms
Operation in this
area is limited by RDS(on).
100ms
IT10638
--0.2 --0.4 --0.6 --1.2--0.8 --1.0
--0.001
--0.01
7
5
3
2
2
--0.1
7
5
3
2
VGS=0V
--25°C
Ta=75
°C
25
°
C
--1.0
7
5
3
2
7
5
3
2
--0.01 --0.1
23 57 2 --1.0
357 2
3
2
100
7
5
5
3
2
1000
7
5
10
7
IT10639
0 --5 --10 --15 --20 --25 --30
3
5
7
2
3
IT10640
VDD= --50V
VGS= --10V
100
5
7
3
2
1000
Ciss
Coss
Crss
td(off)
td(on)
tr
tf
f=1MHz
357
DC operation (Ta=25°
C
)
3
5
7
--10
100µs
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
ECH8306
No. A0302-4/4
PS
Note on usage : Since the ECH8306 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
0
020 40
0.4
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT10643
0.8
1.2
1.6
1.8
0.2
0.6
1.0
1.4
Mounted on a ceramic board (900mm
2
✕0.8mm)
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and are not guarantees of the performance, characteristics, and functions of the described products
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