MIG75Q7CSB1X
2004-10-01 1/10
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG75Q7CSB1X (1200V/75A 7in1 )
High Power Switching Applications
Motor Control Applications
• Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit
current, over current, under voltage and over temperature) in one package.
• The electrodes are isolated from case.
• VCE (sat) = 2.2 V (typ.)
• UL recognized File No. E87989
• Weight: 278 g (typ.)
Equivalent Circuit
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. I N (V)
8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. I N (B) 17. I N (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
GND IN FO VD
VSOUTGND
GND IN FO VD
VS OUT GND
GND IN FO VD
VS OUTGND
GND IN FO VD
VS OUT GND
UV W BN P
16 19 20 18 17 14 1315 4 3 2 1
8 7 6 5
12 11 10 9
GNDIN FO VD
VS OUTGND
GND IN FO VD
VSOUT GND
GNDINFO VD
VSOUTGND
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Package Dimensions
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)
7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)
Unit: mm
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Signal Termi nal Layo ut
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)
7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)
Unit: mm
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Maximum Ratings (Tj = 25°C)
Stage Characteristic Condition Symbol Ratings Unit
Supply voltage P-N power terminal VCC 900 V
Collector-emitter voltage ⎯ V
CES 1200 V
Coll e ctor current Tc = 25°C, DC IC 75 A
Forward c urrent Tc = 25°C, DC IF 75 A
Collector power dissipation Tc = 25°C PC 830 W
Inverter
Junction temperature ⎯ T
j 150 °C
Supply voltage P-N power terminal VCC 900 V
Collector-emitter voltage ⎯ V
CES 1200 V
Coll e ctor current Tc = 25°C, DC IC 40 A
Reverse voltage ⎯ V
R 1200 V
Forward c urrent Tc = 25°C, DC IF 40 A
Collector power dissipation Tc = 25°C PC 500 W
Brake
Junction temperature ⎯ T
j 150 °C
Control supply v oltage VD-GND terminal VD 20 V
Input voltage IN-GND terminal VIN 20 V
Fault output voltage FO-GND terminal VFO 20 V
Control
Fault output current FO sink current IFO 14 mA
Operating temperature ⎯ Tc −20~+100 °C
Storage temperature range ⎯ Tstg −40~+125 °C
Isolation voltage AC 1 minute VISO 2500 V
Screw torque (terminal) M4 ⎯ 2 N·m
Module
Screw torque (mounting) M5 ⎯ 3 N·m
Electrical Characteristics
1. Inverter Stage
Characteristic Symbol Test Condition Min Typ. Max Unit
Tj = 25°C ⎯ ⎯ 1
Coll e ctor cut-off curren t ICEX V
CE = 1200 V Tj = 125°C ⎯ ⎯ 10
mA
Tj = 25°C ⎯ 2.2 2.6
Collector-emitter saturati on voltage VCE (sat) VD = 15 V,
IC = 75 A,
VIN = 15 V → 0 V Tj = 125°C ⎯ ⎯ 3.0 V
Forward voltage VF I
F = 75 A, Tj = 25°C ⎯ 2.4 2.8 V
ton ⎯ 2.0 3.0
tc (on) ⎯ 0.3 ⎯
trr ⎯ 0.3 ⎯
toff ⎯ 1.5 2.5
Switching time
tc (off)
VCC = 600 V, IC = 75 A,
VD = 15 V, VIN = 15 V ↔ 0 V,
Tj = 25°C, Inductive load (Note 1)
⎯ 0.4 ⎯
µs
Note 1: Switching time test circuit and timing chart.
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2004-10-01 5/10
2. Brake Stage
Characteristic Symbol Test Condition Min Typ. Max Unit
Tj = 25°C ⎯ ⎯ 1
Coll e ctor cut-off curren t ICEX V
CE = 1200 V Tj = 125°C ⎯ ⎯ 10
mA
Tj = 25°C ⎯ 2.2 2.6
Collector-emitter saturati on voltage VCE (sat) VD = 15 V,
IC = 40 A,
VIN = 15 V → 0 V Tj = 125°C ⎯ ⎯ 3.0 V
Tj = 25°C ⎯ ⎯ 1
Reverse current IR V
R = 1200 V Tj = 125°C ⎯ ⎯ 10 mA
Forward voltage VF I
F = 40 A, Tj = 25°C ⎯ 1.7 2.1 V
ton ⎯ 2.0 3.0
tc (on) ⎯ 0.75 ⎯
trr ⎯ 0.7 ⎯
toff ⎯ 1.5 2.5
Switching time
tc (off)
VCC = 600 V, IC = 40 A,
VD = 15 V, VIN = 15 V ↔ 0 V,
Tj = 25°C, Inductive load (Note 1)
⎯ 0.3 ⎯
µs
Note 1: Switching time test circuit and timing chart.
3. Control Stage (Tj = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
High side ID (H) ⎯ 13 17
Control circuit current Low side ID ( L) VD = 15 V ⎯ 52 68 mA
Input-on signal voltage VIN (on) V
D = 15 V 1.4 1.6 1.8 V
Input-off signal voltage VIN (off) V
D = 15 V 2.2 2.5 2.8 V
Protection IFO (on) 8
10 12
Fault output current Normal IFO (off) VD = 15 V ⎯ ⎯ 0.1
mA
Inverter 120 ⎯ ⎯
Over current
protection trip level Brake OC VD = 15 V, Tj
<
=
125°C 65 ⎯ ⎯ A
Inverter 120 ⎯ ⎯
Short-circuit curren t
protection trip level Brake SC VD = 15 V, Tj
<
=
125°C 65 ⎯ ⎯ A
Over current cut-off time toff (OC) V
D = 15 V ⎯ 5 ⎯ µs
Trip level OT 110 118 125
Over temperature
protection Reset level OTr Case temperature ⎯ 98 ⎯ °C
Trip level UV 11.0 12. 0 12.5
Control supply under
voltage protection Reset level UVr ⎯ 12.0 12.5 13.0 V
Fault output pulse widt h tFO V
D = 15 V 1 2 3 ms
4. Thermal Resistance
(Tc = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Inverter IGBT stage ⎯ ⎯ 0.15
Inverter FRD s t age ⎯ ⎯ 0.35
Brake IGBT stage ⎯ ⎯ 0.25
Junction to case thermal resistance Rth (j-c)
Brake FRD stage ⎯ ⎯ 0.6
°C/W
Case to fin thermal resistance Rth (c-f) Compound is applied ⎯ 0.017 ⎯ °C/W
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Switching Time Test Circuit
Timing Chart
2.5 V 1.6 V
15 V
10% 10%
toff
t
c
(o
ff
)
10% 10%
t
o
n
t
c
(o
n
)
90% Irr
trr
0
Irr 20% Irr
Input Pulse
VIN Wa vefo r m
IC Wa v e f o r m
VCE Wavef o r m
90%
PG
TLP559 (I GM ) Intelligent power m odule
VD
IN
GND
OUT
VS
GND
U
(
V, W, B
)
P
V
CC
VD
IN
GND
OUT
VS
GND
IF =
16 mA
N
15 V
0.1
µ
F
22
µ
F
15
k
Ω
15 V
0.1
µ
F
22
µ
F
15
k
Ω
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5. Recommended conditions for application
Characteristic Symbol Test Condition Min Typ. Max Unit
Supply voltage VCC P-N Power terminal ⎯ 600 800 V
Control supply v oltage VD V
D-GND Signal t erminal 13.5 15 16.5 V
Carrier frequenc y fc PWM Control ⎯ ⎯ 20 kHz
Dead time tdead S witching time test circuit
(see page.6) (Note 2) 3 ⎯ ⎯ µs
Note 2: The table li st s Dead time requirements for t he module input, excluding photocoupler del ays. When
specifying dead tim e requirements for the phot ocoupler input, pleas e add photoc oupler delays to the dea d
ti me given abov e.
Dead Time Timing Chart
tdead
15
VIN Wa vefo r m
VIN Wa vefo r m
0
15
0
tdead
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2004-10-01 8/10
IC – VCE
IC – VCE
Switching time – IC
Switching time – IC
IF – VF
trr, Irr – IF
Coll ector-emitter vol t ag e VCE (V)
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
Forward voltage VF (V)
Forward current IF (A)
Collector c urre nt IC (A)
Collector c urre nt IC (A)
Switching time (µs)
Switching time (µs)
Peak reverse recovery current Irr (A)
Reverse recovery time trr (×10 nS)
Forward current IF (A)
150
00 52
50
100
1 3 4
VD = 17 V
VD = 13 V
VD = 15 V
Common emitter
Tj = 25°C
150
005 2
50
100
13 4
VD = 17 V VD = 13 V
VD = 15 V
Common emitter
Tj = 125°C
0
10
1
0.3
0.1
0.03
0.01
3
20 60 8010 40 70 30 50
Tj = 25°C
VCC = 600 V
VD = 15 V
L-LOAD
ton
toff
tc
(
off
)
tc
(
on
)
0
10
1
0.3
0.1
0.03
0.01
3
20 60 80 10 40 70 30 50
Tj = 125°C
VCC = 600 V
VD = 15 V
L-LOAD
ton
toff
tc
(
off
)
tc
(
on
)
150
00
100
52 1 3 4
50
Common cathode
: Tj = 25°C
: Tj = 125°C
0
100
3
10
5
3
1
5
20 60 80 10 40 70 30 50
Common cathode
: Tj = 25°C
: Tj = 125°C
Irr
trr
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2004-10-01 9/10
OC – Tc
ID (H) – fc
ID (L) – fc
Reverse bias SOA
Rth (t) – tw Invert er stage
Rth (t) – tw Brake stage
Case temperature Tc (°C)
Carrier frequency (kHz)
Carrier frequency (kHz)
Collector-emitter voltage VCE (V)
Pulse width tw (s)
Pulse width tw (s)
High side control circuit current ID (H) (mA)
Over current protection trip level OC (A)
Collector c urre nt IC (A)
Low side control circuit current ID (L) (mA)
Transient thermal resistance
Rth (t)/(°C/W)
Transient thermal resistance
Rth (t)/(°C/W)
1500
VD = 15 V
Inverter stage
Brake stage
25 50 75 100 125
0
200
150
100
50
0
25
25 0
VD = 15 V
5 10 15 20
5
10
15
20
0
80
250
20
40
60
5 10 15 20
VD = 15 V
120
100
60
20
0
140
1400 0 200 400 600 800 1000 1200
40
80
Tj
<
=
125°C
VD = 15V
OC
0.01
10
100.001 0.01 0.1 1
0.1
1
Diode stage
Transi sto r st ag e
TC = 25°C
0.01
10
10 0.001 0.01 0.1 1
0.1
1Diode stage
Transi sto r st ag e
TC = 25°C
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Turn on loss – IC
Turn off loss – IC
Collector current IC (A)
Collector current IC (A)
T urn off loss Eoff (mJ)
Tu rn on loss Eon (mJ)
0
100
10
1
080
VCC = 600 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
10 20 30 40 60 70 50
VCC = 600 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
10 20 30 40 60 70 50 0
100
10
1
080