©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
tm
November 200 6
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise note d
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Curren t (DC ) 2 A
ICP Collector Curren t (Pu lse ) 4 A
IB Base Current 50 mA
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
ICEO Collector Cut-off Curren t VCE = 50V, IB = 0 20 µA
ICBO Collector Cut-off Curren t VCB = 100V, IB = 0 20 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
500
1000
200 12K
VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
IC = 4A, IB = 40mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation Volt age IC = 4A, IB = 40mA 4 V
VBE(on) * Base-Emitter On Voltage VCE = 3A, IC = 2A 2.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.75A 25 MHz
Cob Output Capacita nce VCB = 10V, IE = 0
f = 0.1MHz 100 pF
1.Base 2.Collector 3.Emitter
D-PAK
1
R1 10kΩ≅
R2 0.6kΩ≅
Equivalent Circuit
B
E
C
R1 R2
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MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tD
tR
tR,tD(µs), TURN ON TIME
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[µS], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
5ms
100µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
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MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics (Continued)
Figure 1. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Mechanical Dimensions
Dimensions in Millimeters
6.60
±0.20
2.30
±0.1
0
0.50
±0.1
0
5.34
±0.30
0.70
±0.20
0.60
±0.20
0.80
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
MIN0.55
0.76
±0.10
0.50
±0.1
0
1.02
±0.2
0
2.30
±0.2
0
6.60
±0.20
0.76
±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89
±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
MJD112 NPN Silicon Darlington Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be re asonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a lat er date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to i m prove design.
Obsolete Not In Production This datasheet contains specifications on a produc t
that has been discontinued by Fair child semiconductor.
The datasheet is printed for reference information only.
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MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
