Si APD
Enhanced near IR sensitivity, using a MEMS
technology
S11519 series
www.hamamatsu.com
IR-enhanced
1
Features Applications
YAG laser monitor
Long wavelength light detection
High sensitivity in the near infrared region
High gain
Stable operation at low bias
General ratings / absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no. Window material*1Package Active area size*2
Absolute maximum ratings
Operating temperature
Topr
Storage temperature
Tstg
(mm) (°C) (°C)
S11519-10 K TO-5 φ1.0 -20 to +85 -55 to +125
S11519-30 K TO-8 φ3.0
*1: K=borosilicate glass
*2: Area in which a typical gain can be obtained
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength
*3
λp
Breakdown
voltage
VBR
ID=100 A
Temp.
coeffi cient
of VBR
ID=100 A
Dark
current*3
ID
Terminal
capacitance*3
Ct
Cut-off
frequency*3
fc
RL=50 Ω
Excess
noise
fi gure*3
x
λ=890 nm
Gain
M
λ=890 nm
Typ.
(V)
Max.
(V)
Typ.
(nA)
Max.
(nA)(nm) (nm) (V/°C) (pF) (MHz)
S11519-10 600 to 1150 960 350 500 1.7 3 30 2.0 400 0.3 100
S11519-30 9 90 12.0 230
*3: Values measured at a gain listed in the characteristics table
HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure
formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infra-
red region.
The S11519 series provides signifi cantly higher sensitivity to YAG laser light (1.06 m) compared to our conventional product
(S8890 series).
The S11519 series is a low bias operation type with enhanced sensitivity in the near infrared region. Compared to the conven-
tional product S8890 series, the S11519 series has improved various characteristics such as breakdown voltage, dark current, and
cut-off frequency.
Si APD S11519 series
Wavelength (nm)
Photo sensitivity (A/W)
(Typ. Ta=25 °C, M=100)
400
10
0
80
30
50
60
20
40
70
600 800 1000 1200
S11519 series
Conventional products
S8890 series
KAPDB0182EA
Spectral response
Spectral response (quantum efficiency)
Wavelength (nm)
Quantum efficiency (%)
400 600 800 1000
100
80
40
0
60
20
1200
S11519 series
(Typ. Ta=25 °C, M=1)
Conventional products
S8890 series
KAPDB0189EA
2
Si APD S11519 series
Terminal capacitance vs. reverse voltage
Reverse voltage (V)
Terminal capacitance
0 100 200
100 pF
100 fF
1 pF
10 pF
400
1 nF
300
S11519-30
S11519-10
(Typ. Ta=25 °C, f=100 kHz)
KAPDB0191EA
Reverse voltage (V)
Gain
100 300
102
100
101
400
104
103
200
-20 °C
0 °C 20 °C
60 °C
40 °C
(Typ.)
KAPDB0185EA
Dark current vs. reverse voltage
Reverse voltage (V)
Dark current
(Typ. Ta=25 °C)
100 200 300
1 µA
100 nA
1 nA
10 pA
10 nA
100 pA
400
S11519-10
S11519-30
(Typ. Ta=25 °C)
100 200 300
1 µA
100 nA
1 nA
10 pA
10 nA
100 pA
400
S11519-10
S11519-30
KAPDB0190EA
Gain vs. reverse voltage
3
Cat. No. KAPD1028E01 Jul. 2010 DN
Si APD S11519 series
www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4
Dimensional outlines (unit: mm)
KPINA0025EA
KPINA0024EA
S11519-30S11519-10
Chip position accuracy with
respect to the cap center
X, Y ≤ ±0.4
The glass window may extend a
maximum of 0.2 mm beyond the
upper surface of the cap.
(2.5)
(15)
4.9 ± 0.2
Index mark
1.4
Photosensitive
surface
0.5 max.
13.9 ± 0.2
12.35 ± 0.1
10.5 ± 0.1
7.5 ± 0.2
1.0 max.
Active area
3.0
Case
0.45
Lead
Y
X
Active area
Chip position accuracy with
respect to the cap center
X, Y ≤ ±0.3
The glass window may extend a
maximum of 0.2 mm beyond the
upper surface of the cap.
(2.5)
(20) 4.2 ± 0.2
0.4 max.
5.9 ± 0.1
5.08 ± 0.2
Y
X
8.1 ± 0.1
9.1 ± 0.2
1.5 max.
Photosensitive
surface
0.45
Lead
1.0
