Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSBS15CH60F Motion SPM(R) 3 Series Features General Description * UL Certified No. E209204 (UL1557) FSBS15CH60F is a Motion SPM(R) 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. * 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection * Built-In Thermal Shutdown Function * Low-Loss, Short-Circuit Rated IGBTs * Low Thermal Resistance Using Ceramic Substrate * Dedicated Vs Pins Simplify PCB Layout * Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing * Single-Grounded Power Supply * Isolation Rating: 2500 Vrms / min. Applications * Motion Control - Home Appliance / Industrial Motor Related Resources * AN-9035 - Motion SPM 3 Series Ver.2 User's Guide Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBS15CH60F FSBS15CH60F SPMBA-027 Rail 10 (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 1 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series January 2014 FSBS15CH60F Motion SPM(R) 3 Series Integrated Power Functions * 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection and System Control Functions * For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 10 and 11. * For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) * Fault signaling: corresponding to UVLO (low-side supply) and SC faults * Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration 13.7 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (7) CFOD (8) CSC (21) NU (22) NV 19.2 (23) NW (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (24) U Case Temperature (TC) Detecting Point (25) V (26) W DBC Substrate (27) P (20) VS(W) Figure 2. Top View (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 2 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Selection Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input 8 CSC 9 IN(UH) 10 VCC(UH) 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(VH) 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving High-Side Bias Voltage Ground for V-Phase IGBT Driving Signal Input for High-Side U-Phase High-Side Bias Voltage for U-Phase IC High-Side Bias Voltage for V-Phase IC 16 VS(V) 17 IN(WH) 18 VCC(WH) 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 Signal Input for High-Side W Phase High-Side Bias Voltage for W-Phase IC 3 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Internal Equivalent Circuit and Input/Output Pins P (27) (19) V B(W ) (18) V CC(W H) (17) IN (W H) VB VCC IN (20) V S(W ) (15) V B(V) (14) V CC(VH) W (26) VB VCC IN (16) V S(V) (11) V B(U) OUT VS V (25) VB (10) V CC(UH) VCC OUT COM (9) IN (UH) IN (12) V S(U) (8) C SC C(SC) (7) C FO D VS U (24) OUT(W L) C(FOD) (6) V FO N W (23) VFO (5) IN (W L) (3) IN (UL) VS COM (13) IN (VH) (4) IN (VL) OUT COM IN(W L) OUT(VL) IN(VL) N V (22) IN(UL) (2) CO M COM (1) V CC(L) VCC OUT(UL) V SL N U (21) Figure 3. Internal Block Diagram 1st Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 4 www.fairchildsemi.com unless otherwise specified.) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P- NU, NV, NW Supply Voltage (Surge) Applied between P- NU, NV, NW Collector - Emitter Voltage Rating Unit 450 V 500 V 600 V IC Each IGBT Collector Current TC = 25C 15 A ICP Each IGBT Collector Current (Peak) TC = 25C, Under 1ms Pulse Width 30 A PC Collector Dissipation TC = 25C per Chip TJ Operating Junction Temperature (2nd Note 1) 32 W -20 ~ 125 C 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM(R) 3 product is 150C (at TC 100C). However, to insure safe operation of the Motion SPM 3 product, the average junction temperature should be limited to TJ(ave) 125C (at TC 100C) Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ 17 V VFO Fault Output Supply Voltage Applied between VFO - COM IFO Fault Output Current Sink Current at VFO Pin VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V 5 mA -0.3 ~ VCC+0.3 V Rating Unit 400 V -20 ~ 100 C Total System Symbol Parameter Conditions VPN(PROT) Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V TJ = 125C, Non-Repetitive, < 2 s TC Module Case Operation Temperature -20CTJ 125C, See Figure 2 TSTG Storage Temperature VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate -40 ~ 125 C 2500 Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance Condition Min. Typ. Max. Unit Inverter IGBT Part (per 1 / 6 module) - - 3.1 C/W Inverter FWD Part (per 1 / 6 module) - - 3.6 C/W 2nd Notes: 2. For the measurement point of case temperature(TC), please refer to Figure 2. (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 5 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Absolute Maximum Ratings (TJ = 25C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation Voltage VCC = VBS = 15 V VIN = 5 V IC = 15 A, TJ = 25C - - 2.3 V FWDi Forward Voltage VIN = 0 V IC = 15 A, TJ = 25C - - 2.1 V Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 15 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) tC(ON) tOFF tC(OFF) - 0.4 - s - 0.28 - s - 0.67 - s - 0.35 - s - 0.10 - s - 0.55 - s - 0.24 - s - 0.73 - s tC(OFF) - 0.34 - s trr - 0.10 - s - - 250 A trr LS VPN = 300 V, VCC = VBS = 15 V IC = 15 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) tON tC(ON) tOFF ICES Collector - Emitter Leakage Current VCE = VCES 2nd Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 6 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) Control Part Symbol IQCCL Parameter Conditions Quiescent VCC Supply Current IQCCH Typ. Max. Unit VCC = 15 V IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA VCC = 15 V IN(UH, VH, WH) = 0 V VCC(UH), VCC(VH), VCC(WH) - COM - - 100 A VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 500 A 4.5 - - V IQBS Quiescent VBS Supply Current VBS = 15 V IN(UH, VH, WH) = 0 V VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V Short Circuit Current Trip Level VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V VFOL VSC(ref) Min. TSD Over-Temperature Protection Temperature at LVIC 125 145 175 V TSD Over-Temperature Protection Hysterisis Temperature at LVIC - 18 - V UVCCD 10.7 11.9 13.0 V UVCCR Supply Circuit Under-Voltage Detection Level Protection Reset Level 11.2 12.4 13.2 V UVBSD Detection Level 10.1 11.3 12.5 V Reset Level 10.5 11.7 12.9 V tFOD Fault-out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage - - V OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM 3.0 VIN(OFF) - - 0.8 V UVBSR 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F] Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Unit - 300 400 V Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) - COM 13.5 15 16.5 V Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15 18.5 V -1 - 1 V / s 2.0 - - s - 20 kHz 4 V VPN Supply Voltage Applied between P - NU, NV, NW VCC Control Supply Voltage VBS High-Side Bias Voltage dVCC / dt, Control Supply Variation dVBS / dt tdead Blanking Time for Preventing For Each Input Signal Arm-Short fPWM PWM Input Signal -20C TC 100C, -20C TJ 125C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -4 (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 7 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) Parameter Mounting Torque Conditions Mounting Screw: M3 Device Flatness Min. Typ. Max. Unit 0.51 0.62 0.72 N*m 0 - +120 m - 15.40 - g Recommended 0.62 N*m See Figure 5 Weight (+) (+) Figure 5. Flatness Measurement Position (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 8 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series Mechanical Characteristics and Ratings FSBS15CH60F Motion SPM(R) 3 Series Time Charts of Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-Voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-Voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 6. Under-Voltage Protection (Low-Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under-Voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-Voltage reset (UVBSR). b6 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection (High-Side) (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 9 www.fairchildsemi.com c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage FSBS15CH60F Motion SPM(R) 3 Series Lower Arms Control Input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short-Circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "LOW": IGBT OFF state. c7 : Input "HIGH": IGBT ON state, but during the active period of fault output, the IGBT doesn't turn ON. c8 : IGBT OFF state. Figure 8. Short-Circuit Protection (Low-Side Operation Only) (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 10 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series +5 V SPM RPF = 4.7 k IN(UH) , IN(VH) , IN(WH) MCU IN (UL) , IN (VL) , IN(WL) 100 1 nF VFO CPF= 1 nF COM Figure 9. Recommended MCU I/O Interface Circuit 3rd Notes: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application's printed circuit board. The Motion SPM(R) 3 Product input signal section integrates a 3.3 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the signal voltage drop at input terminal. 2. The logic input works with standard CMOS or LSTTL outputs. These values depend on PWM control algorithm. +15 V RE(H) RBS One-Leg Diagram of Motion SPM 3 Product DBS P 0.1 F 22 F Vcc VB IN HO COM VS Inverter Output Vcc 1000 F 1 F IN OUT COM VSL N Figure 10. Recommended Bootstrap Operation Circuit and Parameters 3rd Notes: 3. It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics. 4. The bootstrap resistor (RBS) should be three times greater than RE(H). The recommended value of RE(H) is 5.6 , but it can be increased up to 20 (maximum) for a slower dv/ dt of high-side. 5. The ceramic capacitor placed between VCC - COM should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 11 www.fairchildsemi.com RE(VH) +15 V RE(UH) RBS DBS (19) VB(W) (18) VCC(WH) CBS Gating WH CBSC (17) IN(WH) (20) VS(W) RBS DBS P (27) VB VCC OUT COM IN (15) VB(V) (14) VCC(VH) VB VCC CBS Gating VH CBSC (13) IN(VH) (16) VS(V) M C U RBS DBS (11) VB(U) (10) VCC(UH) CBS Gating UH W (26) VS CBSC (9) IN(UH) (12) VS(U) OUT COM IN VS V (25) M VB VCC CDCS OUT COM IN Vdc U (24) VS RF +5 V (8) CSC CSC RPF (7) CFOD RS CFOD Fault (6) VFO (5) IN(WL) Gating WL C(SC) OUT(WL) C(FOD) NW (23) IN(WL) OUT(VL) (4) IN(VL) Gating VL RSW VFO IN(VL) NV (22) RSV (3) IN(UL) IN(UL) Gating UL (2) COM CBPF COM CPF (1) VCC(L) OUT(UL) VCC CSP15 VSL NU (21) RSU CSPC15 Input Signal for ShortCircuit Protection RFW W-Phase Current V-Phase Current U-Phase Current RFV RFU CFW CFV CFU Figure 11. Typical Application Circuit 4th Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM(R) 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance (please refer to Figure 9). 4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 3.3 kresistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off / turn-on threshold voltage. 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s. 9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended. 11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 12. CSPC15 should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 12 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series RE(WH) FSBS15CH60F Motion SPM(R) 3 Series Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD27AA.pdf (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 13 www.fairchildsemi.com FSBS15CH60F Motion SPM(R) 3 Series (c)2006 Fairchild Semiconductor Corporation FSBS15CH60F Rev. C6 14 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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