DATA SH EET
Product specification
Supersedes data of 1995 Oct 25 2001 Nov 15
DISCRETE SEMICONDUCTORS
BGD502
550 MHz, 18.5 dB gain power
doubler amplifier
dbook, halfpage
M3D252
2001 Nov 15 2
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
FEATURES
Excellent linearity
Extremely low nois e
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequen cy range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
Fig.1 Simplified outline.
handbook, halfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Ra ting System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 550 MHz 18.8 20.8 dB
Itot total current consumption (DC) VB=24V 435 mA
SYMBOL PARAMETER MIN. MAX. UNIT
ViRF input voltage 65 dBmV
Tstg storage temperature 40 +100 C
Tmb operating mounting base temperature 20 +100 C
2001 Nov 15 3
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; VB=24V; T
mb =35C; ZS=Z
L=75.
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
2. Measured according to DIN4 5004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo 6dB;
fr = 549.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but are able to withstand supp ly transients up to VB = 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f=550MHz 18.8 20.8 dB
SL slope cable equivalent f = 40 to 550 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz 0.3 dB
s11 input return losses f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 19 dB
f = 160 to 550 MHz 18 dB
s22 output return loss es f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 19 dB
f = 160 to 550 MHz 18 dB
s21 phase resp on se f = 50 MHz +135 +225 deg
CTB composite triple beat 77 channels flat;
Vo=44dBmV;
measured at 547.25 MHz
65 dB
Xmod cross modulation 77 channels flat;
Vo=44dBmV;
measured at 55.25 MHz
68 dB
CSO composite secon d or de r distortion 77 channels flat;
Vo=44dBmV;
measured at 548.5 MHz
62 dB
d2second order distortion note 1 72 dB
Vooutput volt a ge dim = 60 dB; note 2 64 dBmV
NF noise figure f = 550 MHz 8dB
Itot total current consumption (DC) note 3 415 435 mA
2001 Nov 15 4
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
Table 2 Bandwidth 40 to 450 MHz; VB=24V; T
mb =35C; ZS=Z
L=75.
Notes
1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz.
2. Measured according to DIN4 5004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo 6dB;
fr = 449.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 438.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f=450MHz 18.6 20.6 dB
SL slope cable equivalent f = 40 to 450 MHz 0.2 1.8 dB
FL flatness of frequency response f = 40 to 450 MHz 0.3 dB
s11 input return losses f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 19 dB
f = 160 to 450 MHz 18 dB
s22 output return loss es f = 40 to 80 MHz 20 dB
f = 80 to 160 MHz 19 dB
f = 160 to 450 MHz 18 dB
s21 phase resp on se f = 50 MHz +135 +225 deg
CTB composite triple beat 60 channels flat;
Vo=46dBmV;
measured at 445.25 MHz
67 dB
CSO composite secon d or de r distortion 60 channels flat;
Vo=46dBmV;
measured at 446.5 MHz
60 dB
Xmod cross modulation 60 channels flat;
Vo=46dBmV;
measured at 55.25 MHz
67 dB
d2second order distortion note 1 75 dB
Vooutput volt a ge dim =60 dB; note 2 67 dBmV
NF noise figure f = 450 MHz 7dB
Itot total current consumption (DC) note 3 415 435 mA
2001 Nov 15 5
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U2
U1W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 20.8 9.5 0.51
0.38 0.25 27.2 2.04
2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75
44.25 8.2
7.8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
Wee1
5
p
1
d
xMB
yMB
B
04-02-04
10-06-18
yMB
2001 Nov 15 6
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a design.
2. The prod uct status of devi ce(s) described in this document may ha ve changed since this document was pub lished
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specificat ion for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such info rmation and
shall have no liability for the consequences of use of such
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reserves the right to make changes to information
published in this document, including without limitation
specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information su pplied prior to the publicat ion hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critic al sys tems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to res ult in personal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr od ucts in such equipment or
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimize the risks
associated with their ap plications and produ cts.
2001 Nov 15 7
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier BGD502
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors products in order to
avoid a default of the app lications and th e products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subje ct to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless other wise
agreed in a valid written individual agreement. In case an
individual agreeme nt is co nc luded only the terms and
conditions of the resp ective agreement shall apply. NXP
Semiconductors hereby expressly objects to apply ing the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by customer.
No offer to sell or license Nothing in this document
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Export control This document as well as the item(s)
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national authorities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as su ch is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is au tomotive qualified, the
product is not suitable fo r automotive use. It is neither
qualified nor te sted in accorda nce with automot ive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive eq uip m en t or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for suc h aut omo tive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own ris k, an d (c) customer fully indemnifies
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors ’ st andard warranty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not fo rm p ar t o f an y q uot ation or co nt ra ct, is b elieve d to be accurate and reliable an d may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al co ntent, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/04/pp8 Date of release: 2001 Nov 15
