LESHAN RADIO COMPANY, LTD.
M15–1/2
General Purpose Transistors
MAXIMUM RATINGS
Value
Rating Symbol BCX17LT1 BCX18LT1 Unit
BCX19LT1 BCX20LT1
Collector–Emitter V oltage V CEO 45 25 Vdc
Collector–Base V oltage V CBO 50 30 Vdc
Emitter–Base V oltage V EBO 5.0 5.0 Vdc
Collector Current — Continuous I C500 500 mAdc
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 5 5 6 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
PNP
BCX17LT1
BCX18LT1
NPN
BCX19LT1
BCX20LT1
V oltage and current are negative
for PNP transistors
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
M15–2/2
PNP BCX17LT1 BCX18LT1
NPN BCX19LT1 BCX20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO Vdc
(I C = 10 mAdc, I B = 0 ) BCX17, 19 45 — —
BCX18, 20 25 — —
Collector–Emitter Breakdown Voltage V (BR)CES Vdc
(I C = 10 µAdc, I C = 0) BCX17, 19 50 — —
BCX18, 20 30 — —
Collector Cutoff Current I CBO
(V CB = 20 Vdc, I E = 0) — — 100 nAdc
(V CB = 20 Vdc, I E = 0, T A = 150°C ) — — 5.0 µAdc
Emitter Cutoff Current I EBO ——10µAdc
(V EB = 5.0 Vdc, I C = 0)
ON CHARACTERISTICS
DC Current Gain hFE —
( IC= 100 mAdc, VCE = 1.0 Vdc ) 100 — 600
( IC= 300 mAdc, VCE = 1.0 Vdc ) 70 — —
( IC= 500 mAdc, VCE = 1.0 Vdc ) 40 — —
Collector–Emitter Saturation Voltage V CE(sat) — — 0.62 Vdc
( IC = 500mAdc, IB = 50mAdc )
Base–Emitter On Voltage V BE(on) — — 1.2 Vdc
( IC = 500 mAdc, VCE = 1.0 Vdc )
