Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363 1 April 29, 1999
FEATURES
• Current Transfer Ratio, 50% Typical
• Leakage Current, 1.0 nA Typical
• Two Isolated Channels Per Package
• Direct Replacement for MCT6
• Underwriters Lab File #E52744
• VDE 0884 Available with Option1
DESCRIPTION
The ILCT6 is a two channel optocoupler for high
density applications. Each channel consists of an
optically coupled pair with a Gallium Arsenide
infrared LED and a silicon NPN phototransistor.
Signal information, including a DC level, can be
transmitted by the device while maintaining a
high degree of electrical isolation between input
and output.
The ILCT6 is especially designed for driving
medium-speed logic, where it may be used to
eliminate troublesome ground loop and noise
problems. It can also be used to replace relays
and transformers in many digital interface appli-
cations, as well as analog applications such as
CRT modulation.
Maximum Ratings
Emitter
(each channel)
Rated Forward Current, DC.........................60 mA
Peak Forward Current, DC
(1.0
µ
s pulse, 300 pps)..............................3.0 A
Power Dissipation at 25°C Ambient..........100 mW
Derate Linearly from 25°C ....................1.3 mW/°C
Detector
(each channel)
Collector Current .........................................30 mA
Collector-Emitter Breakdown Voltage .............30 V
Power Dissipation at 25°C Ambient..........150 mW
Derate Linearly from 25°C .......................2 mW/°C
Package
Isolation Test Voltage ............................5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25°C..............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100°C............................
≥
10
11
Ω
Creepage........................................... 7.0 mm min.
Clearance .......................................... 7.0 mm min.
Total Package Dissipation
at 25°C Ambient. .................................. 400 mW
Derate Linearly from 25°C ..................5.33 mW/°C
Storage Temperature .................–55°C to +150°C
Operating Temperature .............–55°C to +100°C
Lead Soldering Time at 260°C ................. 10 sec.
V
DE
Electrical Characteristics
T
A
=25°C
Symbol Min. Typ. Max
.Unit Condition
Emitter
Forward Voltage
V
F
— 1.25 1.50 V
I
F
=20 mA
Reverse Current
I
R
— 0.1 10
µ
A
V
R
=3.0 V
Junction Capacitance
C
J
—25—pF
V
F
=0 V
Detector
Breakdown Voltage BV
CEO
30 65 — V
I
C
=10
µ
A
I
E
=10
µ
A
BV
ECO
7.0 10 — —
Leakage Current,
Collector-Emitter
I
CEO
— 1.0 100 nA
V
CE
=10 V
Capacitance,
Collector-Emitter
C
CE
— 8.0 — pF
V
CE
=0 V
Package
DC Current
Transfer Ratio
CTR 20 50 — %
I
F
=10 mA
V
CE
=10 V
Saturation Voltage,
Collector-Emitter
V
CEsat
— — 0.40 V
I
C
=2.0 mA
I
F
=16 mA
Isolation
Capacitance
C
ISOL
— 0.5 — pF f=1.0 MHz
Capacitance
between Channels
— — 0.4 — pF f=1.0 MHz
Bandwidth — — 150 — kHz
I
C
=2.0 mA
V
CC
=10 V
R
L
= 100
Ω
Switching Times,
Output Transistor
t
on
,
t
off
— 3.0 —
µ
s
I
C
=2.0 mA
R
E
=100
Ω
,
V
CE
=10
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Dimensions in inches (mm)
ILCT6/MCT6
Dual Phototransistor
Optocoupler
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
ILCT6
www.infineon.com/opto • 1-800-777-4363 2 April 29, 1999
Figure 1. Forward voltage versus forward current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
Figure 2. Normalized non-saturated and
saturated CTR at
T
A
=25°C versus LED current
100101.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF - LED Current - m
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
CTRce(sat) Vce = 0.4V
NCTR - Normalized CTR
Figure 3. Normalized non-saturated and
saturated CTR at
T
A
=50°C versus LED current
100101.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF - LED Current - m
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
Ta = 50°C
CTRce(sat) Vce = 0.4V
NCTR - Normalized CTR
Figure 4. Normalized non-saturated and
saturated CTR at
T
A
=70°C versus LED current
100101.1
0.
0
0.
5
1.
0
1.
5
NCTR(SAT)
NCTR
IF - LED Current -
m
NCTR - Normalized CTR
Vce = 10V, IF = 10mA
Ta = 25°C
Ta = 70°C
CTRce(sat) Vce = 0.4V
Normalized to:
Figure 8. Propagation delay versus collector
load resistor
100101.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - KΩ
tpLH - Propagation Delay - µ
s
tpHL - Propagation Delay - µ
s
tpLH
tpHL
Ta = 25°C, IF = 10mA
Vc c = 5 V, Vth = 1.5 V
Figure 6. Collector-emitter current versus
temperature and LED current
6050403020100
0
5
1
0
1
5
2
0
2
5
3
0
3
5
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
Figure 7. Collector-emitter leakage current
versus temperature
100806040200-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
Ta - Ambient Temperature - °C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
Figure 5. Normalized non-saturated and
saturated CTR at
T
A
=85°C versus LED current
100101.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
Ta = 85°C
CTRce(sat) Vce = 0.4V
IF - LED Current - mA
NCTR - Normalized CTR
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
ILCT6
www.infineon.com/opto • 1-800-777-4363 3 April 29, 1999
Figure 9. Switching Timing
V0
IF
tPHL
tS
tR
tF
tD
50%
tPLH
Figure 10. Switching schematic
VO
VCC=5 V
RL=75 Ω
IF=10 mA
F=10 KHz,
DF=50%
