ILCT6/MCT6 Dual Phototransistor Optocoupler FEATURES * Current Transfer Ratio, 50% Typical * Leakage Current, 1.0 nA Typical * Two Isolated Channels Per Package * Direct Replacement for MCT6 * Underwriters Lab File #E52744 * V VDE 0884 Available with Option1 Dimensions in inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) D E DESCRIPTION The ILCT6 is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILCT6 is especially designed for driving medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. It can also be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Maximum Ratings Emitter (each channel) Rated Forward Current, DC .........................60 mA Peak Forward Current, DC (1.0 s pulse, 300 pps) ..............................3.0 A Power Dissipation at 25C Ambient.......... 100 mW Derate Linearly from 25C ....................1.3 mW/C Detector (each channel) Collector Current .........................................30 mA Collector-Emitter Breakdown Voltage ............. 30 V Power Dissipation at 25C Ambient.......... 150 mW Derate Linearly from 25C .......................2 mW/C Package Isolation Test Voltage ............................5300 VRMS Isolation Resistance VIO=500 V, TA=25C.............................. 1012 VIO=500 V, TA=100C............................ 1011 Creepage........................................... 7.0 mm min. Clearance .......................................... 7.0 mm min. Total Package Dissipation at 25C Ambient. .................................. 400 mW Derate Linearly from 25C ..................5.33 mW/C Storage Temperature .................-55C to +150C Operating Temperature .............-55C to +100C Lead Soldering Time at 260C ................. 10 sec. Anode 1 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector Anode 4 5 Emitter .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) 10 .020 (.51 ) .035 (.89 ) 3-9 .008 (.20) .012 (.30) .100 (2.54) typ. .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Electrical Characteristics TA=25C Symbol Min. Typ. Max . Unit Condition Forward Voltage VF -- 1.25 1.50 V IF=20 mA Reverse Current IR -- 0.1 10 A VR=3.0 V Junction Capacitance CJ -- 25 -- pF VF=0 V BVCEO 30 65 -- V BVECO 7.0 10 -- -- IC=10 A IE=10 A Leakage Current, Collector-Emitter ICEO -- 1.0 100 nA VCE=10 V Capacitance, Collector-Emitter CCE -- 8.0 -- pF VCE=0 V DC Current Transfer Ratio CTR 20 50 -- % IF=10 mA VCE=10 V Saturation Voltage, Collector-Emitter VCEsat -- -- 0.40 V IC=2.0 mA IF=16 mA Isolation Capacitance CISOL -- 0.5 -- pF f=1.0 MHz Capacitance between Channels -- -- 0.4 -- pF f=1.0 MHz Bandwidth -- -- 150 -- kHz IC=2.0 mA VCC=10 V RL= 100 Switching Times, Output Transistor ton, toff -- 3.0 -- s IC=2.0 mA RE=100 , VCE=10 Emitter Detector Breakdown Voltage Package Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 1 April 29, 1999 Ta = -55C 1.2 Ta = 25C 1.1 1.0 0.9 Ta = 85C 0.8 0.7 .1 1 10 IF - Forward Current - mA CTRce(sat) Vce = 0.4V 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - m Iceo - Collector-Emitter - nA NCTR - Normalized CTR 1.0 Ta = 50C 0.5 NCTR(SAT) NCTR 0.0 100 NCTR - Normalized CTR Normalized to: Vce = 10V, IF = 10mA Ta = 25C 1.0 CTRce(sat) Vce = 0.4V 0.5 Ta = 70C NCTR(SAT) NCTR 0.0 .1 100 1 10 IF - LED Current - m 25 50C 20 15 70C 25C 85C 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 5 10 4 10 3 10 10 2 10 Vce = 10V 1 TYPICAL 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 8. Propagation delay versus collector load resistor 100 tpLH - Propagation Delay - s 1 10 IF - LED Current - m Figure 4. Normalized non-saturated and saturated CTR at TA=70C versus LED current 1.5 1 10 IF - LED Current - mA Figure 7. Collector-emitter leakage current versus temperature Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V .1 Ta = 85C NCTR(SAT) NCTR 30 100 Figure 3. Normalized non-saturated and saturated CTR at TA=50C versus LED current 1.5 0.5 35 Normalized to: Vce = 10V, IF = 10mA Ta = 25C 1.0 1.0 Figure 6. Collector-emitter current versus temperature and LED current Ice - Collector Current - mA NCTR - Normalized CTR 1.5 Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V 0.0 .1 100 Figure 2. Normalized non-saturated and saturated CTR at TA=25C versus LED current 1.5 1000 Ta = 25C, IF = 10mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.5 2.0 1.5 10 tpLH 1 .1 1.0 1 10 100 RL - Collector Load Resistor - K Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 2 tpHL - Propagation Delay - s 1.3 Figure 5. Normalized non-saturated and saturated CTR at TA=85C versus LED current NCTR - Normalized CTR VF - Forward Voltage - V Figure 1. Forward voltage versus forward current 1.4 ILCT6 April 29, 1999 Figure 9. Switching Timing IF tPHL V0 tPLH tS 50% tD tR tF Figure 10. Switching schematic VCC=5 V IF=10 mA F=10 KHz, DF=50% VO RL=75 Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 3 ILCT6 April 29, 1999