VRF151
VRF151MP
50V, 150W, 175MHz
The VRF151 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
• Available in Matched Pairs
• 30:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF151
• RoHS Compliant
Symbol Parameter VRF151(MP) Unit
VDSS Drain-Source Voltage 170 V
IDContinuous Drain Current @ TC = 25°C 16 A
VGS Gate-Source Voltage ±40 V
PDTotal Device dissipation @ TC = 25°C 300 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 V
VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 3.0
IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 1 mA
IGSS Gate-Source Leakage Current (V*S = ±20V, VDS = 0V) 1.0 µA
gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 mhos
VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
050-4937 Rev F 9-2010
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
RθJC Junction to Case Thermal Resistance 0.60 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
M174
1
10
1000
0 10 20 30 40 50
VRF151(MP)
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 375
pF
Coss Output Capacitance VDS = 50V 200
Crss Reverse Transfer Capacitance f = 1MHz 12
Class A Characteristics
Symbol Test Conditions Min Typ Max Unit
GPS f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 20
dB
IMD(d3) f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP -50
IMD(d9-d13) f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP -75
Functional Characteristics
Symbol Parameter Min Typ Max Unit
GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 18 22 dB
GPS f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W 14
ηDf 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 50 %
IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
1-30 dBc
IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP -60
ψf1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
30:1 VSWR - All Phase Angles No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4937 Rev F 9-2010
0.1
1
10
20
1 10 100 250
0
5
10
15
20
25
30
0 2 4 6 8 10 12
0
5
10
15
20
25
0 4 8 12 16 20
Ciss
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ= 125°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
ID, DRAIN CURRENT (V)
4V
5V
6V
7V
8V
9V
10V
14V
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250μs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
Coss
Crss
Rds(on) DC line
IDMax
TJ = 125°C
TC = 75°C
Typical Performance Curves
Pdmax
VRF151(MP)
050-4937 Rev F 9-2010
60
55
50
45
40
35
30
25
20
0 50 100 150 200
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-5 10-4 10-3 10-2 10 1.0
-1
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
0 5 10 15 20 25 30
P
out, OUTPUT POWER (WATTS PEP)
Figure 6. IMD versus POUT
IMD, INTERMODULATION DISTORTION (dB)
OUTPUT POWER (WPEP)
P
out, INPUT POWER (WATTS PEP)
Figure 7. POUT versus PIN
Typical Performance Curves
Vdd=50V, Idq = 250mA,
Freq=150MHz
Vdd=50V, Idq = 250mA,
Freq=150MHz
IM3
IM5
Vdd=40V
Vdd=50V
0.9
VRF151(MP)
050-4937 Rev F 9-2010
RFC1
+ 50VDC
+
+
C9
C8
C7
C3 C2
L3L2
C6
R1
R2
R3
C4 C5
L1
C1
Bias
0-12V
C10 C11
L4
RF
Input
RF
Output
C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25pF, Unelco
C4 -- 0.1uF, Ceramic
C5 -- 1.0 uF, 15 WV Tantalum
C6 -- 250pF, Unelco J101
C7-- 25pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05uF, Ceramic
C11 -- 15uF, 60WV Electrolytic
DUT
175 MHz test Circuit
+ 50VDC
+
C8
C4
C6 C7
L2
C3
R2
R1
C5
L1
C2
C1
Bias
0-12V
C9 C10
RF
Input
RF
Output
C1 -- 470 pF Dipped Mica
C2, C5, C6 - C9 -- 0.1uF SMT
C3 -- 200pF ATC 700C
C4 -- 15pF, ATC 700C
C10 -- 10uF, 100V Electrolytic
L1 - VK200-4B
L2 -- 2 Ferrite beads, 2.0 uH
R1, R2 -- 51 7, 1 W Carbon
R3 -- 3.3 7, 1 W Carbon
T1 -- 9:1 Transformer
T2 -- 1:9 Transformer
DUT
T2
R3
30 MHz test Circuit
VRF151(MP)
050-4937 Rev F 9-2010
A
U
M
M
Q
RB
1
4
32
D
K
ESeating Plane
C
J
H
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
.5” SOE Package Outline
All Dimensions are ± .005
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.096 0.990 24.39 25.14
B0.465 0.510 11.82 12.95
C0.229 0.275 5.82 6.98
D0.216 0.235 5.49 5.96
E0.084 0.110 2.14 2.79
H0.144 0.178 3.66 4.52
J0.003 0.007 0.08 0.17
K0.435 11.0
M 45° NOM 45° NOM
Q0.115 0.130 2.93 3.30
R 0.246 0.255 6.25 6.47
U0.720 0.730 18.29 18.54
Adding MP at the end of P/N specifi es a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code Vth Range Code 2 Vth Range
A 2.900 - 2.975 M 3.650 - 3.725
B 2.975 - 3.050 N 3.725 - 3.800
C 3.050 - 3.125 P 3.800 - 3.875
D 3.125 - 3.200 R 3.875 - 3.950
E 3.200 - 3.275 S 3.950 - 4.025
F3.275 - 3.350 T 4.025 - 4.100
G3.350 - 3.425 W 4.100 - 4.175
H 3.425 - 3.500 X4.175 - 4.250
J 3.500 - 3.575 Y 4.250 - 4.325
K 3.575 - 3.650 Z4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
