ras s % . =sLIGBTEYLaIb INY)Z) 7mBR15NF120 GiBK BRAC yy FV TNE YX 1200V/15A/PIM M49 : Features ORBEA Fv High Speed Switching @REBD Voltage Drive OEY FIFI YRAEGIAN PE Low Inductance Module Structure OAKS HHKAHK FW ye SAF vA IL--FORAR Converter Diode Bridge Dynamic Brake Circuit \ RR& : Applications @t-7ERMAR4+-<% = Inverter for Motor Drive @AC, DCH#PYF AC and DC Servo Drive Amplifier @RSRBA Uninterruptible Power Supply (APNGAF 94-388) Bete & HE : Maximum Ratings and Characteristics @@s BATH : Absolute Maximum Ratings (Tc=25C) Items Symbols Condition Ratings Units E (Bbos-+ Ti y SMBE Vees 1200 v PalFo-h+ Livy Mee Vors +20 Vv i oC le 15 t = ALZSRK lms le pulse 30 A z= pC le 15 v BARK One Pe 120 W AL9S > TiyFshRE Vers 1200 v S Hoh Tiv Ss BE Vers +20 Vv . ee ; DC lc 10 A C 8g ar?eRn ime I: Pulse 25 A fe & | BAR + TOne Pe 88 Ww + [e- Fie LE Vay 1200 v Rr Pe le wavy ] A b-TR lesan l0ms 50 A ~ E7 RE Lift VarM 1600 V 3 E 2 FREER LIP RE Vas 1700 Vv oy 50/60HZ a : Fh eH lo _ 25 A & = ! 8 ERY ORR GEMBEL) lesw T2008 320 A - 10ms N = rl Sei RWB L) HET 512 As 10ms SAR T; +150 C RIB Tstg 40~+125 1 itBE Vise AC : 1min. AC2500 Vv Betis bk Lo Mounting #1 1.7 Nem | $384M > Recommendable value :1.3~1.7 N+ m Me 2238792 OOOS?SS 7b37MBR15NF120 Bt459-tYa-W ORM : Electrical Characteristics (T)=25'C) items Symbols | Conditions - Characteristics Units min. typ. max. Ib99 + Li y FMR Ices Ty=28C, Vee=i1200V, Ves=0V 1.0 | mA Fbh+ Li yFSMRnBR logs Vce=0V, Vor=+20V 20 uA e F-h- LEy FMLA ME | Vee ity Vcoe=20V, Ic=15mA 4.5 7.5 1 Oe Ib79+Tivy I MMARE Vee (say Ves=15V, Ic=15A 3.3 | Ri Bees + rey RE Vce le=15A 3.0 [Vv no | ADBE Cies Vor=O0, Vee=10V, f=1MHz 2400 PE lg ton Voo=600V 12 Ne - tr lc= 154 0.6 of AtFy 7M tort Voe= +15V 15 | tf Ro=820 0.5 SPREAD ter In= 5A, Voe=~10V, di/dt=50A/us 350 [ns ALYS + Ti y SEEM Ices Vces=1200V, Voe=0V 1.0 {mA e AF bh Li y SRE lozs Vce=0V, Vor=+20V 100 nA ie oO Ib79 Li SMe Vee teat) le= 1A, Veor=15V 3.31V 7 w , ton Vce=600V 0.8 3 & At vF > 7M <3 oe gy v2 us n tf Re=1200 0.5 23 eet Inam r= 1200V 1 mA | seiie Of ter 600 ns Se RSE Vem lp= 254 1.4 |v S 3 | SBR lem Ve = 1600V 1 mA @MH4tt : Therama! Characteristics Items Symbols | Conditions - Characteristics Units min. typ. max. Inverter |GBT 1.04 : . Inverter FRD 2.78 RUBE (chip) Rth (0) | Brake IGBT 1,04_| C/W Converter Diode 3.4 MRE (or -A 7 7 i) OK Rth (c-f) | With Thermal Compound 0.05 RPP IAy ey PMA TBAT ey Lie Ya ERR OTOP This ig the value which is defined mounting on the additional! cooling fin with thermal compound. 2H : Equivalent Circuit Schematic Converter P P11 Brake Inverter a , J) : iw FWD a a2 Ne ee a WwW RO} $O4 TO-+ 8 woOt AA A &r 8 Br L@ NO ah Tm (11) _@@ 2238792 COO57%b LTTBitvt9-tL4-y 7MBR15NF120 MStt he : Characteristics qT t qT qT t J * q v qT T ob wb : a qa : L L : 7 me Dm eee un ; : : a : at ef : le le : (A) wk.. (A) whee i i i a . o 4 2 3 4 5 a IU9S-> TS y SRM Vee (V) ALOR > TS y SARE Vee (V) C) IePSRR-IBESS-Ri y SMBH (TH25'C) INVER APP FRM-IEMAF- LE y FM MEST =H128'C) INV Collector current vs. Collector-Emitter valtage<INV> Collector current vs. Collector-Emitter voltage<INV> q qT TF 7 q 3 a : Lb L- : 7 7 : x x i 2 i a i. fal : fal : a i a2 : gE : EE = Vce : Voce : (Vv) : (Vv) a i 1 * i i 0 1 1 i j 8 + 10 6 a ' or) 6 2 a ; F-b- TS y SARE Vee (v) Fob +> LE y SEAR Var (V) f \ C) AbSs Li y SBE F bere y PMRBE RET = 250) INVES) AbOS Li y PREF be 3 y SME RE (T= 125C) NVERD Coltectar-Emittar voltage vs. Gate-Emitter voltage iNV> Colloctor-Emitter voltage vs. Gate-Emitter voltaga<iINV> A 4 v F ~ 3 R100 fm lon b tos tt (ns} 10 1 i 4 i : 10 i i i i i a 10 20 a 0 0 x IL 9 Bit IeflA) AL BM ic(A} ALF 7 TOM Ibo 5 BRET H25'C) UNV ERD Ad y Fv PRM ALD 9 BRE (T= 125C) INV Switching time vs. Collector current<INV> Switching time vs. Collector curreat<INV> mm 2238792 OOOS7I7? S3b7MBR15NF120 S+tANGU-t74a-W T r T T 25 3 3 A L : 4 3 '. 5 x an dene ead ee ee er ree nme eset antes 5 3 ay y : Y : 2 a 2 HO] ---- Lceneteeeeejee teres cfc sens sebaeeces Ho Pl fon fa : g 1 a & tr iz Vor Vee ves 5 (ns) 100 - (V} (Vv) 100 * 0 50 100 180 200 = 4 bikin Rela) FERRE Qginc) RA y Fo TRE bE (T= 25C )<INVERD FART vy PADBET,=25C) INVEBD Switching time vs. Gate resistance<INV> Dynamic input characteristic NV> T T T go bocce eesefece ue RES 266. prepreg poten bcc canes 4 #3 iit it 14 a 4 3 aa _ HB % m re) g mn : ne % cle (ns) ( Je FA (a) a ; Ire : i (A) : ~ 0 i 1 1 4 i ai 0 1 z 4 5 0 10 3% Divs ALT SRME Veco (Vv) MW be LA) (4447 FMR Ve) Trey teria HeCINV AED B77 RS Tt FREE CINVERD Tre, Ienls NV? Forward voltage of free wheel diode<INV> 5 1 v T se T T T t : T : : mol ......... Peete berete erected wees \ Whe cece ee ed z Qc ccc ceed cietete ctbe fore sbenreneievedeveeeaen + ob ce bccevaee ev studio ; ae y Eon 125C 7 5 F 4 Eotf- 128 04 Lp 100}: oot gee geen: verbs 4 vad 3 2 : Inon-tepatitive pulea) : S Eon 25C BOR... 5 fees etter beets tetera ats Veceaccee Gane ead a 2 on 25C | 2 : C. : Bon Bp Al ae orn pott 297 (A) al : wd Err 125C 7 : : : : (muicycle) | co prorecea so |. ROSCA Rapa us) En . + Eee 25C | : Bo i gee i i ra re 6 5 10 F 5 0 0 200 400 600 800 10001200 ALF FBR lo(A) IL9R-13 y SRRE Vee(V) At yF LIRKALS F BTECINVES> Switching loss vs, Collector current<(INV> Me 2236792 0005798 472 SoM ER Be Sf FA) (TS 125C INVES Reverse biased safe operating area<INV>+ + Bibes9-tEY4-W 7MBR15NF120 1 # % A A th G-<) tos | Dt | ane | oot abet iu | 0.001 a 5 10 5 ~ B % 35 ry Ii RIE Pw (S) ALISA: Tey SRE Vee (V) / eae M37 9-2 Ey SMMLESHE(T/ = 15C) INVED Transient thermal resistance Capacitance vs. Collector-Emitter voltage (INV> ot 7 T To oT VOB=20V 18V,12V,10v 7 : : sad by a , 2 : L L : : a VE eee eee PIR fi cece enews at 9 ci] : | TE wb BM bee cndine ren head mw a Ie Ic : (Al (A] : She eh = , de i i i i i i i oe 1 a 3 4 6 . Q 1 2 a a $s . QL79- IS y SRYRE Vee (V) IG79 + Lay SRE Vee (V) CO Avo IME-ILS HTS y SOBER H1C)K7L4 > ILA FRR IPH TE y SMABEBE(T A125) (7 --4 Collector current vs, Collector-Emitter voltage(BRAKE> Collector current vs. Collectar-Emitter voltage(BRAKE> : . T t : . a : 23 : L L : y 9 ; 4 a y 3 a x : C3] : fa : g : a iE E ne Vee : Vee : (vi i (v) : a 2 rn . i ib a" i a 0 1 4 i i a 6 Td 6% a a o & w we 20 Bs Fob DS y SRE Ve [v) Sh > LS SRB Vee (V) ALAHTS oI MBE F bli I MBER HUC)F LF ALPS-Liy IMME F bls oy SRE BET S125) C FE Fm Collector-Emitter voltage vs. Gate-Emitter voltagea<BRAKE> Collactor-Emitter voltage vs. Gate-Emittar voltage<BRAKE> Me 223879%e 0005799 3057MBR15NF120 a BRU BREAN 5 10 43 20 IL 7 SBR iclA) 24 vy Fv TMI FRET, = 25S) (7 - FD Switching time vs. Collector current(BRAKE> he beaded dL 100 Am hia Ac(Q) Ady Fv ORM F BERGE (T=25C)} (7 UFD Switching time vs. Gate resistance<BRAKE> FBV WE AM Eon Eot Ere (mu/eycle) , Gont2s 7] Gott 126C + Eon 25C 4 Eo 25C ew 125 6-4 er 25C $ 40 18 nm AL 2 BA IclA} AA DF Ye FRR IE TRE LTD Switching loss vs, Collector current<BRAKE> S+/S7-EL4a-W TTT T a s wm 8 20 AL? 2 BHR IclA) Ay FY ARMAS 9 RPRE(T =H125'C KF FRB Switching time vs. Collector current(BRAKE> g 3 8 SF RAHM er we U SS MME eH rs L_ % 50 100 150 FER R Qg (nc) HAF. yo ZADME(T RICK 7 > Dynamic input characteristic(BRAKE> ! ' yu ' at . : Mi 4: a *} Heron L 2 A 2 ee LSOSOAL de ede 4 & : (han-tepettive pulse): : itt : le : : : : : 20 - : = : RBSOA Repebive pulse) poe QO m 400 eX B00 1000 1200 ALOR LS -y SRE Vee (V) RS BRR GA 4 FAT SISO SBD Reverse biased sate operating area(SRAKE> me 22387592 0005800 150 aBLAND -24-) 7MBR15NF120 T T F se tp pe pe 1 *. J. 0 6 w 6 xn 26 4 0 6.5 . 18 2.0 7 ALIS - LE y SARE Vee (V) MALE ve (V) WY BR-DUIF-TE y TMBMERETI ATSC) CF EF BD AYN 9 BIA FE ORE Capacitance vs. Callector-Emitter voltage<BRAKE> Converter Diode Forward current vs. Farward voltage @44:% : Outline Drawings . 95.4541 7 ~| 340.3 {5403 1540.3 17. 240.5 | 10.1605 10.1 6405 "1 16405 10,16 ai 5 (6.54) a tl ett 4 Sees 2.54405 TS at Qo it je \_ a 4 I j 1 - Ps tt oy! i Ly bef Oo] | Ref TER BR mmr ) 3 RT Hl ! 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