SM3GZ47, SM3JZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off-State Voltage: VDRM = 400V, 600V z R.M.S On-State Current: IT (RMS) = 3A z High Commutating (dv / dt) z Isolation Voltage: VISOL = 1500V AC ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage SM3GZ47 SM3JZ47 SYMBOL VDRM R.M.S On-State Current (Full Sine Waveform Tc = 110C) IT (RMS) Peak One Cycle Surge On-State Current (Non-Repetitive) ITSM 2 I t Limit Value (t = 1~10ms) 2 RATING 400 600 3 30 (50Hz) 33 (60Hz) UNIT V A A 2 I t 4.5 A s Critical Rate of Rise of On-State Current (Note 1) di / dt 50 A / s Peak Gate Power Dissipation PGM 5 W TOSHIBA PG (AV) 0.5 W Weight: 1.7 g (typ.) Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Tj -40~125 C Tstg -40~125 C VISOL 1500 V Average Gate Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) JEDEC JEITA 13-10H1A Note 1: di / dt test condition VDRM = 0.5xRated ITM 4.5A tgw 10s tgr 250ns igp = IGTx2.0 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-27 SM3GZ47, SM3JZ47 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT 20 A T2 (+), Gate (+) 1.5 T2 (+), Gate (-) 1.5 T2 (-), Gate (-) 1.5 IV T2 (-), Gate (+) I T2 (+), Gate (+) 20 T2 (+), Gate (-) 20 T2 (-), Gate (-) 20 T2 (-), Gate (+) Repetitive Peak Off-State Current IDRM TEST CONDITION VDRM = Rated I Gate Trigger Voltage Gate Trigger Current II III II III VGT IGT VD = 12V RL = 20 VD = 12V RL = 20 IV V mA Peak On-State Voltage VTM ITM = 4.5A 1.5 V Gate Non-Trigger Voltage VGD VD = Rated, Tc = 125C 0.2 V VD = 12V, ITM = 1A 30 mA Junction to Case, AC 4.2 C / W VDRM = Rated, Tj = 125C 300 V / s 10 V / s Holding Current Thermal Resistance IH Rth (j-c) Critical Rate of Rise of Off-State Voltage dv / dt Critical Rate of Rise of Off-State Voltage at Commutation (dv / dt) c Exponential Rise VDRM = 400V, Tj = 125C (di /dt) c = -2.0A / ms MARKING *1 M3GZ47 Characteristics indicator Part No. (or abbreviation code) Part No. M3GZ47 SM3GZ47 M3JZ47 SM3JZ47 Part No. (or abbreviation code) *1 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-10-27 SM3GZ47, SM3JZ47 3 2006-10-27 SM3GZ47, SM3JZ47 4 2006-10-27 SM3GZ47, SM3JZ47 RESTRICTIONS ON PRODUCT USE 20070701-EN * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-10-27