4 7 MS6M 0741 5A 200V JAPAN O 6MBP5RA20 Package type : P69 0 5 Lot No. Dimensions in mm P:The details of terminals P Odered No. in monthly Manufactured month (Jan.Sep.:9,Oct.:O,Nov.:N,Dec.:D) Last digit of manufactured year . "" means theoretical dimensions. 2. The dimensions of the terminals are defined at the bottom. 3. The dimensions in ( ) means referential values. 4.() Terminals:Gold plating Indication of Lot No. ) Notes 1. Package Outline Drawing 3 22 H04-004-03 2Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output (U). V Output (V). W Output (W). N (For connection an external shunt-resistor) N2 Negative input supply voltage. Control circuit Symbol GNDU High side ground (U). Description VinU Logic input for IGBT gate drive (U). VccU High side supply voltage (U). GNDV High side ground (V). VinV Logic input for IGBT gate drive (V). VccV High side supply voltage (V). GNDW High side ground (W). VinW Logic input for IGBT gate drive (W). VccW High side supply voltage (W). GND Low side ground. Vcc Low side supply voltage. VinX Logic input for IGBT gate drive (X). VinY Logic input for IGBT gate drive (Y). VinZ Logic input for IGBT gate drive (Z). ALM Low side alarm signal output. MS6M 0741 4 22 H04-004-03 3. Block Diagram P Pre-driver VccU Vcc VinU IN OH SGND OUT GND U GNDU Pre-driver VccV Vcc VinV IN OH SGND OUT GND V GNDV Pre-driver VccW Vcc VinW IN OH SGND OUT GND W GNDW Pre-driver2 Vcc Vcc VinX INX VinY INY VinZ INZ OHX SGNDX OUTX OHY SGNDY OUTY N1 ALM OHZ SGNDZ OUTZ ALM R1 RALM 6.75m PGND OC 1.5k N2 GND GND Pre-drover includes following functions. Pre-drover2 includes following functions. (P-side) (N-side) . Amplifier for driver . Amplifier for driver 2. Under voltage lockout circuit 2. Under voltage lockout circuit 3. IGBT chip over heating protection 3. IGBT chip over heating protection 4. Over current protection 5. Alarm signal output MS6M 0741 5 22 H04-004-03 4Absolute Maximum Ratings Tc25 unless otherwise specified. Symbol Min. Max. Units VDC 0 900 V VDC(surge) 0 1000 V Vsc 400 800 V Vces 0 1200 V DC Ic - 15 A 1ms Icp - 30 A Duty=78% *2 -Ic - 15 A One transistor *3 Pc - 92 W Supply Voltage of Pre-Driver *4 Vcc -0.5 20 V Input Signal Voltage *5 Vin -0.5 Vcc+0.5 V Input Signal Current Iin - 1 mA Alarm Signal Voltage *6 VALM -0.5 Vcc V Alarm Signal Current *7 ALM - 20 mA Tj - 150 Operating Case Temperature Topr -20 100 Storage Temperature Tstg -40 125 Solder Temperature *8 Tsol - 260 Viso - AC2500 V - - 2.0 Nm Items Bus Voltage DC (between terminal P and N) Surge Short operating Collector-Emitter Voltage *1 Collector Current Collector Power Dissipation Junction Temperature Isolating Voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw Torque Mounting(M4) Note *1 Vces shall be applied to the input voltage between terminal P and U or or W ,N and U or V or W. *2 Duty=125/FWD Rth(j-c)/(IcxVF MAX)=125/3.46/(15x3.1)x100=78% *3 Pc=125/IGBT Rth(j-c)=125/1.36=92W *4 VCC shall be applied to the input voltage between terminal No.3 and 1,6 and 4, 9 and 7, 11 and 10. *5 V shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 12,13,14 and 10. *6 shall be applied to the voltage between terminal No.15 and 10. *7 shall be applied to the input current to terminal No.15. *8 Immersion time 101sec MS6M 0741 6 22 H04-004-03 5. Electrical Characteristics Tj25Vcc15V unless otherwise specified. 5.1 Main circuit Item Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Conditions Symbol ICES Typ. Max. Units - - 1.0 mA Terminal - - 2.8 Chip - 2.3 - V Terminal - - 3.1 Chip - 2.3 - V 1200V Vin terminal open. VCE 15A VF Min. -15A Turn-on time ton VDC600VTj=125 1.2 - - Turn-off time toff Ic15AFig.1Fig.6 - - 3.6 trr VDC600V - - 0.3 Min. Typ. Max. Units 0.5 - 9 mA 0.8 - 28 mA ON 1.0 1.35 1.7 OFF 1.25 1.6 1.95 - 8.0 - Tc-20 1.1 - - Tc25 - 2.0 - Tc125 - - 4.0 1425 1500 1575 - 6.75 - m Reverse recovery time us IF15A Fig.1Fig.6 5.2 Control circuit Item Supply current of P-side pre-driver (one unit) Supply current Conditions Symbol Iccp Iccn Switching Frequency : 06kHz Tc-20100 Fig.7 of N-side pre-driver Input signal threshold voltage Input Zener Voltage Alarm Signal Hold Time Current Limit Resistor Shunt-Resistor for over current sense Vin(th) Vz tALM Rin20k Fig.2 RALM Alarm terminal R1 Between terminal N1 and N2 MS6M 0741 V V ms 7 22 H04-004-03 5.3 Protection Section Vcc Item Symbol Over Current Protection Level Conditions Min. Typ. Max. Units Ioc Tj=125 23 - - A Over Current Protection Delay time tdoc Tj=125 - 5 - us IGBT Chips Over Heating TjOH Surface 150 - - of Inverter circuit Protection Temperature Level ofIGBT Chips Over Heating Protection Hysteresis TjH - 20 - Under Voltage Protection Level VUV 11.1 11.7 12.4 V VH 0.2 0.5 0.8 Symbol Min. Typ. Max. Under Voltage Protection Hysteresis 6. Thermal Characteristics Item Junction to Case IGBT Rth(j-c) - - 1.36 Thermal Resistance *9 FWD Rth(j-c) - - 3.46 Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - Units /W *9:(For 1device, Case is under the device) 7. Noise Immunity Vdc=600VVcc=15VTest Circuit Fig 5. Item Conditions Min. Typ. Max. Units Common mode Pulse width 1us,polarity ,10 minutes 2.0 - - kV 5.0 - - kV Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 800 V Power Supply Voltage of Pre-Driver Vcc 13.5 15.0 16.5 V - 1.3 - 1.7 Nm Symbol Min. Typ. Max. Units Wt - 85 - g rectangular noise Common mode lightning surge Judgeno over-current, no miss operating Rise time 1.2us,Fall time 50us Interval 20s,10 times Judgeno over-current, no miss operating 8. Recommended Operating Conditions Item Screw Torque (M4) 9. Weight Item Weight MS6M 0741 8 22 H04-004-03 1 ff Figure 1. Switching Time Waveform Definitions Vge (Inside IPM) Fault (Inside IPM) off off /Vin on on Gate On Gate Off normal alarm /ALM tALMMax. tALMMax. tALM 2ms(typ.) FaultOver-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram Necessary conditions for alarm reset (refer to to in figure2.) This represents the case when a failure-causing Fault lasts for a period more than tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared. This represents the case when the ON condition of the input Vin lasts for a period more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. This represents the case when the Fault disappears and the Vin turns OFF within tALM. The alarm resets after lasting for a period of the specified time tALM. off /Vin on on Ioc Ic /ALM tdoc alarm tdoc Figure 3. Over-current Protection Timing Diagram Period : When a collector current over the OC level flows and the OFF command is input within a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period : When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. MS6M 0741 9 22 H04-004-03 t SC Ic Ic IALM Ic IALM IALM Figure.4 Definition of tsc 20k DC 15V VinU CT P VccU IPM U SW1 AC200V GNDU Vcc V VinX W + 20k DC 15V 4700p SW2 Noise N GND Earth Cooling Fin Figure 5. Noise Test Circuit Vcc 20k DC 5V P L IPM + Vin DC 300V HCPL4504 GND N Ic Figure 6. Switching Characteristics Test Circuit Icc DC 15V A Vcc P IPM P.G +8V fsw Vin U V W GND N Figure 7. Icc Test Circuit MS6M 0741 10 22 H04-004-03 10. Truth table 10.1 IGBT Control The following table shows the IGBT ON/OFF status with respect to the input signal Vin. The IGBT turn-on when Vin is at "Low" level under no alarm condition. Input Output Alarm (Vin) (IGBT) Low High ON Low Low OFF High - OFF 10.2 Fault Detection (1) When a fault is detected at the high side, only the detected arm stops its output. At that time the IPM dosen't any alarm. (2) When a fault is detected at the low side, all the lower arms stop their outputs and the IPM outputs an alarm of the low side. Cause of Fault Alarm Output High side High side High side (U-phase) (V-phase) (W-phase) Low side ALM High side UV OFF * * * High (U-phase) TjOH OFF * * * High High side UV * OFF * * High (V-phase) TjOH * OFF * * High High side UV * * OFF * High TjOH * * OFF * High OC * * * OFF Low UV * * * OFF Low TjOH * * * OFF Low (W-phase) Low side *Depend on input logic. MS6M 0741 11 22 H04-004-03 11. Cautions for design and application 1. Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. 2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible. Vcc-GND 3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH 0.8s. tpHL,tpLH0.8usCMR 4. For the alarm output circuit, use low-speed type optical isolators with CTR 100%. CTR100% 5. For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations. Vcc 6. Suppress surge voltages as possible by reducing the inductance between the DC bus P and N, and connecting some capacitors between the P and N terminals. P-NP-N 7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between the three-phase lines each and the ground. AC 8. At the external circuit, never connect the control terminal GNDU to the main terminal U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, malfunctions may be caused. VVWW N 9. Take note that an optical isolator's response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. -GND 10. Taking the used isolator's CTR into account, design with a sufficient allowance to decide the primary forward current of the optical isolator. CTR MS6M 0741 12 22 H04-004-03 11. Apply thermal compound to the surfaces between the IPM and its heat sink to reduce the thermal contact resistance. 12. Finish the heat sink surface within roughness of 10m and flatness (camber) between screw positions of 0 to +50m. If the flatness is minus, the heat radiation becomes worse due to a gap between the heat sink and the IPM. And, if the flatness is over +50m, there is a danger that the IPM copper base may be deformed and this may cause a dielectric breakdown. 10um0+50um IPM50um +50m 0 Heat sink Mounting holes 13. This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use. 14. There is thermal interference between nearby power devices,because the P619 PKG is a compact package. Therefore you measure the case temperature just under the IGBT chips that showed in report MT6M04858, and estimate the chip temperature. MT6M04858 15. Please see theFuji IGBT-IPM R SERIES APPLICATION MANUALRH983 and Fuji IGBT MODULES N SERIES APPLICATION MANUAL RH982. IGBT-IPM R RH983IGBT N RH982 MS6M 0741 13 22 H04-004-03 12. Example of applied circuit IPM Opto-Coupler 20k 0.1F 10F 3 Vcc IF 2 1 20k 0.1F 10F 6 Vcc IF 5 P 4 20k 0.1F 10F 9 U Vcc IF 8 7 V Motor 11 Vcc 20k W IF 12 20k IF N1 13 N2 20k IF 14 15 10 0.1F 33F 13. Package and Marking Please see the MT6M4140 that is packing specification 14. Cautions for storage and transportation Store the modules at the normal temperature and humidity (5 to 35C, 45 to 75%). (5354575%) Avoid a sudden change in ambient temperature to prevent condensation on the module surfaces. Avoid places where corrosive gas generates or much dust exists. Store the module terminals under unprocessed conditions . Avoid physical shock or falls during the transportation. 15. Scope of application This specification is applied to the IGBT-IPM (type: 6MBP15RA120). IGBT-IPM (6MBP15RA120) 16. Based safety standards UL1557 MS6M 0741 14 22 H04-004-03 7.Characteristics 7-.Inverter Collector current vs. Collector-Emitter voltage (typ.) Tj=25C / Chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25C / Terminal 20 20 Vcc=15V Collector Current : Ic (A) Collector Current : Ic (A) Vcc=15V Vcc=17V 15 Vcc=13V 10 5 0 15 Vcc=17V Vcc=13V 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Collector-Emitter voltage : Vce (V) 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Collector current vs. Collector-Emitter voltage (typ.) Tj=125C / Chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125C / Terminal 20 20 Collector Current : Ic (A) Collector Current : Ic (A) Vcc=15V Vcc=15V Vcc=17V 15 Vcc=13V 10 5 0 Vcc=17V 15 Vcc=13V 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Collector-Emitter voltage : Vce (V) 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Forward current vs. Forward voltage (typ.) Chip Forward current vs. Forward voltage (typ.) Terminal 20 20 25C 125C Forward Current : If (A) 125C Forward Current : If (A) 0.5 15 10 5 0 25C 15 10 5 0 0 0.5 1 1.5 2 Forward voltage : Vf (V) 2.5 3 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) MS6M 0741 5 22 H04-004-03 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125C 3 3 2.5 2 Eon 1.5 Eoff 1 0.5 Err 0 Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25C Eon 2.5 2 1.5 Eoff 1 Err 0.5 0 0 2 4 6 8 10 12 14 16 0 2 Collector current : Ic (A) Thermal resistance : Rth(j-c) (C/W) Collector current : Ic (A) 20 SCSOA (non-repetitive pulse) 60 RBSOA (Repetitive pulse) 0 12 14 16 FWD IGBT 1 0.1 0.01 0 200 400 600 800 000 200 400 0.001 0.01 Collector-Emitter voltage : Vce (V) 0.1 1 Pulse width :Pw (sec) Power derating for FWD (per device) (max.) Power derating for IGBT (per device) (max.) 100 50 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 10 10 50 30 8 Transient thermal resistance (max.) 80 90 6 Collector current : Ic (A) Reversed biased safe operating area Vcc=5V,Tj25 (max.) 20 4 80 60 40 20 0 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) MS6M 0741 6 22 H04-004-03 Switching time vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25C Switching time vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=125C 10000 Switching time : ton,toff,tf (nSec) Switching time : ton,toff,tf (nSec) 10000 toff ton 1000 tf 100 10 2 4 6 8 10 12 Collector current : Ic (A) 14 16 toff ton 1000 tf 100 10 2 4 6 8 10 12 14 16 Collector current : Ic (A) MS6M 0741 7 22 H04-004-03 18. Reliability Test Items Environment Tests Mechanical Tests Test categories Test items Reference Number Acceptnorms EIAJ of ance ED-4701 sample number Test methods and conditions 1 Terminal strength Pull force : 40 N (main terminal) 10 N (control terminal) (Pull test) Test time : 10 1 sec. : 1.3 ~ 1.7 Nm (M4) 2 Mounting Strength Screw torque Test time : 10 1 sec. 3 Vibration Range of frequency : 10500 Hz Sweeping time : 15 min. Acceleration : 100 m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration: 5000 m/s2 Pulse width 1.0 ms Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 235 5 Immersion duration : 5.0 0.5 sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260 5 soldering heat Immersion time : 10 1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High temperature Storage temp. : 125 5 storage Test duration : 1000 hr. 2 Low temperature Storage temp. : -40 5 storage Test duration : 1000 hr. 3 Temperature Storage temp. : 85 2 humidity storage Relative humidity : 85 5% Test duration : 1000hr. 4 Unsaturated Test temp. : 120 2 pressure cooker Atmospheric pressure : 1.7x105 Pa : 85 5% Test humidity Test duration : 96 hr. 5 Temperature Test temp. : Minimum storage temp. -40 5 cycle Maximum storage temp. 125 5 Normal temp. 5 ~ 35 Dwell time : Tmin ~ TN ~ Tmax ~ TN 1hr. 0.5hr. 1hr. 0.5hr. Number of cycles : 100 cycles 6 Thermal shock +0 Test temp. : High temp. side 100 -5 +5 Fluid used Dipping time Transfer time Number of cycles : : : : 5 (0:1) Test Method 402 method Test Method 403 Condition code B 5 (0:1) 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 303 Condition code A 5 (0:1) Test Method 302 Condition code A 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method Condition code A 5 (0:1) Test Method 401 Method Low temp. side 0 -0 Pure water (running water) 5 min. par each temp. 10 sec. 10 cycles MS6M 0741 19 22 H04-004-03 Test categories Test items Endurance Endurance Tests Tests 1 High temperature Test temp. reverse bias Bias Voltage Bias Method 2 Intermitted operating life (Power cycle) Reference norms Number AcceptEIAJ of ance ED-4701 sample number Test methods and conditions Test duration ON time OFF time Test temp. Number of cycles : Ta = 125 5 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E Vcc = 15V : 1000 hr. : 2 sec. : 18 sec. : Tj=100 5deg Tj 150 , Ta=25 5 : 15000 cycles Test Method 101 5 (1:0) Test Method 106 5 (1:0) 19. Failure Criteria Item Characteristic Electrical Leakage current characteristic Saturation voltage Forward voltage Unit ICES - USLx2 mA VCE(sat) - USLx1.2 V VF - USLx1.2 V IGBT th(j-c) - USLx1.2 /W resistance FWD th(j-c) - USLx1.2 /W Ioc LSLx0.8 USLx1.2 Alarm signal hold time tALM LSLx0.8 USLx1.2 ms Over heating Protection TcOH LSLx0.8 USLx1.2 Isolation voltage inspection Failure criteria Lower limit Upper limit Thermal Over Current Protection Visual Symbol Viso Broken insulation - - The visual sample - Note Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS6M 0741 20 22 H04-004-03 Warnings 1. This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. And ,when studying the device duty at a short-circuit current non-repetitive interruption, make sure that the paths are also within the SCSOAspecification. In case of use of IGBT-IPM over these specifications,it might be possible to be broken. RBSOA SCSOA 4. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 5. If the product had been used in the environment with acid, organic matter, and corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 6. The thermal stress generated from rise and fall of Tj restricts the product lifetime. You should estimate the Tj from power losses and thermal resistance, and design the inverter lifetime within the number of cycles provided from the power cycle curve. (Technical Rep. No.: MT6M4057) Tj (MT6M4057) 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 8. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. MS6M 0741 21 22 H04-004-03 Caution 1. Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 2. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 3. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co., Ltd. MS6M 0741 22 22 H04-004-03