VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 * Ultra low-loss, rugged SPT+ chip-set * Smooth switching SPT+ chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V 4500 V DC collector current IC Tc = 85 C 1000 A Peak collector current ICM tp = 1 ms, Tc = 85 C 2000 A 20 V 10000 W 1000 A 2000 A 8000 A 10 s 7400 V 150 C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 3400 V, VCEM CHIP 4500 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 C Case temperature Tc -40 125 C Storage temperature Tstg -40 125 C Mounting torques 2) min VCES Gate-emitter voltage 1) Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1000G450300 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 4500 Collector-emitter 4) saturation voltage VCE sat IC = 1000 A, VGE = 15 V Collector cut-off current ICES VCE = 4500 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance L CE Resistance, terminal-chip RCC'+EE' 3) 4) typ max Unit V Tvj = 25 C 3.0 V Tvj = 125 C 3.7 V Tvj = 25 C 12 mA Tvj = 125 C 120 mA -500 500 nA 5.5 7.0 V IC = 1000 A, VCE = 2800 V, VGE = -15 V .. 15 V 8100 C 105.6 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 7.35 nF 2.04 VCC = 2800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 440 Tvj = 125 C 560 Tvj = 25 C 180 Tvj = 125 C 180 VCC = 2800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 1450 Tvj = 125 C 1950 Tvj = 25 C 600 Tvj = 125 C 420 VCC = 2800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 2300 Tvj = 125 C 3000 VCC = 2800 V, IC = 1000 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 3150 Tvj = 125 C 4300 ns ns ns ns mJ mJ tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 3400 V, VCEM CHIP 4500 V 3360 A 18 nH TC = 25 C 0.07 TC = 125 C 0.1 m Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 2 of 9 5SNA 1000G450300 Diode characteristic values Parameter Forward voltage 5) Symbol Conditions VF IF = 1000 A 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 2800 V, IF = 1000 A, VGE = 15 V, RG = 1.5 , CGE = 220 nF, L = 150 nH inductive load Erec min typ Tvj = 25 C 3.1 Tvj = 125 C 3.4 Tvj = 25 C 960 Tvj = 125 C 1200 Tvj = 25 C 820 Tvj = 125 C 1400 Tvj = 25 C 1500 Tvj = 125 C 1900 Tvj = 25 C 1200 Tvj = 125 C 2330 max Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.010 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.020 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) min max Unit 0.009 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.019 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD 10pC (acc. to IEC 61287) 3500 V 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 190 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1760 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 3 of 9 5SNA 1000G450300 Electrical configuration 5 7 9 4 6 8 3 2 1 Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 4 of 9 5SNA 1000G450300 2000 2000 VCE = 25 V 1800 1600 1500 25 C 1400 IC [A] IC [A] 1200 125 C 1000 1000 800 600 125 C 500 400 25 C 200 VGE = 15V 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 VCE [V] Fig. 1 8 9 10 11 12 13 14 VGE [V] Typical on-state characteristics, chip level Fig. 2 2000 Typical transfer characteristics, chip level 2000 1800 1800 17V 17V 15V 1600 15V 1600 13V 13V 1400 1400 1200 IC [A] 1200 I C [A] 7 1000 1000 800 11V 800 11V 600 9V 600 400 400 9V 200 200 Tvj = 125 C 0 Tvj = 25 C 0 0 0 1 2 3 4 5 Typical output characteristics, chip level 2 3 4 5 6 VCE [V] VCE [V] Fig. 3 1 Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 5 of 9 5SNA 1000G450300 9 14 VCC = 2800 V VGE = 15 V R G = 1.5 ohm C GE = 220 nF Tvj = 125 C L = 150 nH 8 7 6 VCC = 2800 V IC = 1000 A VGE = 15 V Tvj = 125 C L = 150 nH C GE = 220 nF 12 E off 10 E on E on, E off [J] E on, E off [J] E on 5 4 8 6 3 4 E off 2 2 1 E sw [J] = 1.43 x 10 -6 x I C2 + 4.68 x 10 -3 x I C + 1.1 0 0 0 500 1000 1500 0 2000 2 4 6 Fig. 5 8 10 12 14 16 R G [ohm] IC [A] Typical switching energies per pulse vs collector current Fig. 6 10 Typical switching energies per pulse vs gate resistor 10 t d(off) td(off) tf t d(on) , t r, t d(off) , t f [s] td(on) , t r, t d(off) , t f [s] td(on) 1 t d(on) 0.1 tr tr 1 tf VCC = 2800 V R G = 1.5 ohm C GE = 220 nF VGE = 15 V Tvj = 125 C L = 150 nH VCC = 2800 V IC = 1000 A VGE = 15 V Tvj = 125 C L = 150 nH C GE = 220 nF 0.1 0.01 0 500 1000 1500 0 2000 Typical switching times vs collector current 4 6 8 10 12 14 16 R G [ohm] IC [A] Fig. 7 2 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 6 of 9 5SNA 1000G450300 1000 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV VCC = 2800 V 15 C ies 100 C [nF] V GE [V] VCC = 3600 V 10 Coes 10 5 Cres IC = 1000 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 V CE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 Q g [C] 5 6 7 Typical gate charge characteristics 2.5 VCC 3600 V, Tvj = 125 C VGE = 15 V, RG = 1.5 ohm, CGE = 220 nF 2 ICpulse / I C 1.5 1 0.5 Chip Module 0 0 1000 2000 3000 4000 5000 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 7 of 9 5SNA 1000G450300 2500 500 500 E rec [mJ] = -597 x 10 -6 x I F 2 + 2.46 x I F + 413 0 0 0 500 1000 1500 0 2000 1 3 4 5 di/dt [kA/s] IF [A] Fig. 12 2 R G = 1.5 ohm 1000 R G = 1.8 ohm 1000 Irr R G = 2.2 ohm Irr Q rr R G = 3.3 ohm 1500 1500 R G = 4.7 ohm Q rr R G = 15 ohm 2000 2000 E rec [mJ],I rr [A], Q rr [C] E rec [mJ], I rr [A], Q rr [C] 2500 E rec VCC = 2800 V IF = 1000 A Tvj = 125 C L = 150 nH C GE = 220 nF E rec R G = 10 ohm VCC = 2800 V VGE = 15 V R G = 1.5 ohm C GE = 220 nF Tvj = 125 C L = 150 nH R G = 6.8 ohm 3000 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 2000 VCC 3600 V di/dt 5500 A/s Tvj = 125 C L 150 nH 2000 1500 25 C 1500 IR [A] IF [A] 125 C 1000 500 1000 500 0 0 0 1 2 3 4 5 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 1000 2000 3000 4000 5000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1597-00 Oct 07 page 8 of 9 5SNA 1000G450300 0.1 Analytical function for transient thermal impedance: n Z th (j-c) (t) = R i (1 - e -t/ i ) 0.01 Z th(j-c) IGBT 0.001 i 1 2 3 IGBT i =1 Ri(K/kW) 6.95 2.3 1.13 i(ms) 192.6 21.4 2.78 DIODE Z th(j-c) [K/W] IGBT, DIODE Z th(j-c) Diode 4 Ri(K/kW) 13.6 4.75 2.34 i(ms) 191.5 22.5 3.1 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1597-00 Oct 07