BC817W, BC818W
1 Nov-29-2001
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807W, BC808W (PNP)
1
3
VSO05561
2
Type Marking Pin Configuration Package
BC817-16W
BC817-25W
BC817-40W
BC818-16W
BC818-25W
BC818-40W
6As
6Bs
6Cs
6Es
6Fs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter Symbol BC817W BC818W Unit
Collector-emitter voltage VCEO 45 25 V
Collector-base voltage VCBO 50 30
Emitter-base voltage VEBO 5 5
DC collector current IC500 mA
Peak collector current ICM 1 A
Base current mA100
IB
Peak base current IBM 200
Total power dissipation, TS = 130 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
80 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BC817W, BC818W
2 Nov-29-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC817W
BC818W
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC817W
BC818W
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 50 µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
60
100
170
-
-
-
-
-
-
Collector-emitter saturation voltage1
)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
1) Pulse test: t ≤ 300µs, D = 2%
BC817W, BC818W
3 Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 60 -
BC817W, BC818W
4 Nov-29-2001
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector cutoff current ICBO = f (TA)
VCBO = 25V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
BC817W, BC818W
5 Nov-29-2001
DC current gain hFE = f (IC)
VCE = 1V
10
EHP00224BC 817/818
-1 3
10mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
Ι
2
10
2
10
˚C
100
5
25
˚C
-50
˚C
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00215
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
-50
25
150
˚C
˚C
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
