BC817W, BC818W NPN Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 2 Complementary types: BC807W, BC808W (PNP) 1 Pin Configuration VSO05561 Type Marking Package BC817-16W 6As 1=B 2=E 3=C SOT323 BC817-25W 6Bs 1=B 2=E 3=C SOT323 BC817-40W 6Cs 1=B 2=E 3=C SOT323 BC818-16W 6Es 1=B 2=E 3=C SOT323 BC818-25W 6Fs 1=B 2=E 3=C SOT323 BC818-40W 6Gs 1=B 2=E 3=C SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC817W BC818W VCEO 45 25 Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 C Ptot 250 mW Junction temperature Tj 150 C Storage temperature Tstg 500 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC817W 45 - - BC818W 25 - - BC817W 50 - - BC818W 30 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 50 A IEBO - - 100 nA Collector-base breakdown voltage IC = 10 A, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.16 100 160 250 h FE-grp.25 160 250 400 h FE-grp.40 250 350 630 hFE-grp.16 60 - - hFE-grp.25 100 - - hFE-grp.40 170 - - VCEsat - - 0.7 VBEsat - - 1.2 DC current gain 1) IC = 300 mA, VCE = 1 V - hFE hFE Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1) Pulse test: t 300s, D = 2% 2 Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT - 170 - MHz Ccb - 6 - pF Ceb - 60 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC817W, BC818W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 10 3 300 K/W mW RthJS P tot 10 2 200 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 10 0 50 0 0 20 40 60 80 120 C 100 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s TS 10 tp Permissible Pulse Load Collector cutoff current ICBO = f (T A) Ptotmax / PtotDC = f (tp) VCBO = 25V 10 3 Ptotmax / PtotDC 0 10 5 CBO - BC 817/818 EHP00221 nA 10 4 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 max 10 3 typ 10 2 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 tp 0 50 100 C 150 TA 4 Nov-29-2001 BC817W, BC818W DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 1V VCE = 5V 10 3 BC 817/818 h FE 5 EHP00224 10 3 fT 100 C 25 C BC 817/818 EHP00218 MHz 5 -50 C 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 10 1 10 0 3 10 1 10 2 mA C C Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 3 C BC 817/818 EHP00222 mA 10 2 mA 5 10 1 10 1 5 5 10 0 10 0 5 5 0 1.0 150 C 25 C -50 C 10 2 5 10 -1 EHP00215 10 3 C 150 C 25 C -50 C 2.0 3.0 V 10 3 10 -1 4.0 V BEsat 0 0.2 0.4 0.6 V 0.8 V CEsat 5 Nov-29-2001