Hardware
Documentation
Two-Wire Hall-Effect Sensor Family
HAL® 556, HAL 560,
HAL 566
Edition Aug. 29, 2011
DSH000026_005EN
Data Sheet
HAL55x, HAL56x DATA SHEET
2Aug. 29, 2011; DSH000026_005EN Micronas
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Micronas Trademarks
–HAL
Micronas Patents
Choppered Offset Compensation protected by Micro-
nas patents no. US5260614, US5406202, and
EP0548391.
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Contents
Page Section Title
Micronas Aug. 29, 2011; DSH000026_005EN 3
DATA SHEET HAL55x, HAL56x
4 1. Introduction
41.1.Features
4 1.2. Family Overview
5 1.3. Marking Code
5 1.4. Operating Junction Temperature Range
5 1.5. Hall Sensor Package Codes
5 1.6. Solderability and Welding
6 2. Functional Description
7 3. Specification
7 3.1. Outline Dimensions
12 3.2. Dimensions of Sensitive Area
12 3.3. Positions of Sensitive Areas
12 3.4. Absolute Maximum Ratings
12 3.4.1. Storage and Shelf Life
13 3.5. Recommended Operating Conditions
14 3.6. Characteristics
15 3.7. Magnetic Characteristics Overview
18 4. Type Description
18 4.1. HAL556
20 4.2. HAL560
22 4.3. HAL566
24 5. Application Notes
24 5.1. Application Circuit
24 5.2. Extended Operating Conditions
24 5.3. Start-up Behavior
25 5.4. Ambient Temperature
25 5.5. EMC and ESD
26 6. Data Sheet History
HAL55x, HAL56x DATA SHEET
4Aug. 29, 2011; 000026_005ENDSH Micronas
Two-Wire Hall-Effect Sensor Family Sensor Family
in CMOS technology
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
This sensor family consists of different two-wire Hall
switches produced in CMOS technology. All sensors
change the current consumption depending on the
external magnetic field and require only two wires
between sensor and evaluation circuit. The sensors of
this family differ in the magnetic switching behavior
and switching points.
The sensors include a temperature-compensated Hall
plate with active offset compensation, a comparator,
and a current source. The comparator compares the
actual magnetic flux through the Hall plate (Hall volt-
age) with the fixed reference values (switching points).
Accordingly, the current source is switched on (high
current consumption) or off (low current consumption).
The active offset compensation leads to constant mag-
netic characteristics in the full supply voltage and tem-
perature range. In addition, the magnetic parameters
are robust against mechanical stress effects.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages from
4 V to 24 V in the junction temperature range from
−40 °C up to 140 °C. All sensors are available in the
SMD-package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features
– current output for two-wire applications
– junction temperature range from −40 °C up to
140 °C.
– operates from 4 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– switching offset compensation at typically 145 kHz
– overvoltage and reverse-voltage protection
– magnetic characteristics are robust against
mechanical stress effects
– constant magnetic switching points over a wide sup-
ply voltage range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
1.2. Family Overview
The types differ according to the mode of switching
and the magnetic switching points.
Unipolar Switching Sensors:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to low consumption if the magnetic field
is removed. The sensor does not respond to the mag-
netic north pole on the branded side.
Unipolar Inverted Switching Sensors:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to high consumption if the magnetic field
is removed. The sensor does not respond to the mag-
netic north pole on the branded side.
Type Switching
Behavior
Sensitivity see
Page
556 unipolar very high 18
560 unipolar
inverted
low 20
566 unipolar
inverted
very high 22
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 5
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction tempera-
ture. Please refer to section 5.4. on page 25 for
details.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
Fig. 1–1: Pin configuration
Type Temperature Range
K E
HAL556 556K 556E
HAL560 560K 560E
HAL566 566K 566E
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type: 556, 560, or 566
Example: HAL556UA-E
→Type: 556
→Package: TO92UA
→Temperature Range: TJ = −40 °C to +100 °C
1VDD
2
GND
3
NC
4
HAL55x, HAL56x DATA SHEET
6Aug. 29, 2011; DSH000026_005EN Micronas
2. Functional Description
The HAL55x, HAL56x two-wire sensors are monolithic
integrated circuits which switch in response to mag-
netic fields. If a magnetic field with flux lines perpendic-
ular to the sensitive area is applied to the sensor, the
biased Hall plate forces a Hall voltage proportional to
this field. The Hall voltage is compared with the actual
threshold level in the comparator. The temperature-
dependent bias increases the supply voltage of the
Hall plates and adjusts the switching points to the
decreasing induction of magnets at higher tempera-
tures.
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source
is switched off and the current consumption is caused
only by the current through the Hall sensor. In the high
current consumption state, the current source is
switched on and the current consumption is caused by
the current through the Hall sensor and the current
source. The built-in hysteresis eliminates oscillation
and provides switching behavior of the output signal
without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. An internal oscillator provides a two-
phase clock. In each phase, the current is forced
through the Hall plate in a different direction, and the
Hall voltage is measured. At the end of the two
phases, the Hall voltages are averaged and thereby
the offset voltages are eliminated. The average value
is compared with the fixed switching points. Subse-
quently, the current consumption switches to the corre-
sponding state. The amount of time elapsed from
crossing the magnetic switching level to switching of
the current level can vary between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
VDD-pin together with external series resistors.
Reverse current is limited at the VDD-pin by an internal
series resistor up to −15 V. No external protection
diode is needed for reverse voltages ranging from 0 V
to −15 V.
Fig. 2–1: HAL55x, HAL56x block diagram
Fig. 2–2: Timing diagram (example HAL56x)
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Current
Source
VDD
1
Clock
Hall Plate
GND
2
HAL55x, HAL56x
Reverse
Voltage &
Overvoltage
Protection
t
IDDlow
IDD
1/fosc = 6.9 μs
IDDhigh
B
BOFF
fosc
t
t
t
IDD
t
BON
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 7
3. Specification
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
HAL55x, HAL56x DATA SHEET
8Aug. 29, 2011; DSH000026_005EN Micronas
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 9
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
HAL55x, HAL56x DATA SHEET
10 Aug. 29, 2011; DSH000026_005EN Micronas
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 11
Fig. 3–5:
TO92UA-2: Dimensions ammopack inline, not spread
HAL55x, HAL56x DATA SHEET
12 Aug. 29, 2011; DSH000026_005EN Micronas
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-1 TO92UA-1/-2
y 0.85 mm nominal 0.9 mm nominal
A4 0.3 mm nominal 0.3 mm nominal
D1 −3.05 mm ±50 μm
H1 −min. 21 mm
max. 23.1 mm
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 −151)2) 282) V
TJJunction Temperature Range −40 170 °C
1) −18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor)
2) as long as TJmax is not exceeded
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 13
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this spec-
ification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient tem-
perature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the
supply voltage on and off (pulse mode). Please refer to section 5.4. on page 25 for details.
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 4 24 V
TAAmbient Temperature for
Continuous Operations
−40 851) °C
1) when using the “K” type and VDD ≤ 16 V
HAL55x, HAL56x DATA SHEET
14 Aug. 29, 2011; DSH000026_005EN Micronas
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Fig. 3–1: Recommended pad size SOT89B-1
Dimensions in mm
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Low Current Consumption
over Temperature Range
123.35mA
IDD High Current Consumption
over Temperature Range
11214.317mA
VDDZ Overvoltage Protection
at Supply
1−28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
fosc Internal Oscillator
Chopper Frequency
−−145 −kHz
ten(O) Enable Time of Output after
Setting of VDD
1−30 −μs1)
trOutput Rise Time 1 −0.4 1.6 μsV
DD = 12 V, Rs = 30 Ω
tfOutput Fall Time 1 −0.4 1.6 μsV
DD = 12 V, Rs = 30 Ω
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
−−150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–1
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point
−−150 200 K/W
1)B > BON + 2 mT or B < BOFF - 2 mT for HAL55x, B > BOFF + 2 mT or B < BON - 2 mT for HAL56x
1.05
1.05
1.80
0.50
1.50
1.45
2.90
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 15
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 4.0 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Note: For detailed descriptions of the individual types, see pages 18 and following.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL556 −40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mT
unipolar 25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mT
100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mT
140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 mT
HAL560 −40 °C41 46.5 52 47 53 59 4 6.5 10 mT
unipolar 25 °C 41 46.6 52 46 52.5 58.5 3 6 9 mT
inverted 100 °C 41 45.7 52 45 41.1 57.5 2 5.4 8 mT
140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 mT
HAL566 −40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mT
unipolar 25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mT
inverted 100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT
140 °C 1.3 3.6 7.3 2.6 5.2 7.3 0.2 1.6 3 mT
HAL55x, HAL56x DATA SHEET
16 Aug. 29, 2011; DSH000026_005EN Micronas
−15 −5 5 15 25 35
−20
−15
−10
−5
0
5
10
15
20
25
V
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
mA
IDD
VDD
HAL 55x, HAL 56x
IDDhigh
IDDlow
Fig. 3–2: Typical supply current
versus supply voltage
0123456
0
2
4
6
8
10
12
14
16
18
20
V
mA
IDD
VDD
HAL 55x, HAL 56x
IDDhigh
IDDlow
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
Fig. 3–3: Typical supply current
versus supply voltage
−50 0 50 100 150 200
0
2
4
6
8
10
12
14
16
18
20
°C
IDDhigh
IDDlow
VDD = 4 V
VDD = 12 V
VDD = 24 V
mA
IDD
HAL 55x, HAL 56x
TA
Fig. 3–4: Typical supply current
versus ambient temperature
−50 0 50 100 150 200
0
20
40
60
80
100
120
140
160
180
200
°C
TA
VDD = 4 V
VDD = 12 V
VDD = 24 V
fosc
kHz HAL 55x, HAL 56x
Fig. 3–5: Typ. internal chopper frequency
versus ambient temperature
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 17
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
160
180
200
V
VDD
TA = −40 °C
TA = 25 °C
TA = 100°C
TA = 140°C
kHz HAL 55x, HAL 56x
fosc
Fig. 3–6: Typ. internal chopper frequency
versus supply voltage
345678
0
20
40
60
80
100
120
140
160
180
200
V
VDD
TA = −40 °C
TA = 25 °C
TA = 100°C
TA = 140°C
kHz HAL 55x, HAL 56x
fosc
Fig. 3–7: Typ. internal chopper frequency
versus supply voltage
HAL55x, HAL56x DATA SHEET
18 Aug. 29, 2011; DSH000026_005EN Micronas
4. Type Description
4.1. HAL556
The HAL556 is a very sensitive unipolar switching sen-
sor (see Fig. 4–1).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to low current consumption if the mag-
netic field is removed. It does not respond to the mag-
netic north pole on the branded side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
In the HAL55x, HAL56x two-wire sensor family, the
HAL566 is a sensor with the same magnetic charac-
teristics but with an inverted output characteristic.
Magnetic Features:
– switching type: unipolar
– very high sensitivity
– typical BON: 6 mT at room temperature
– typical BOFF: 4 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL556 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–1: Definition of magnetic switching points for
the HAL556
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
IDDhigh
IDDlow
Current consumption
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 5.2 mT
25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 2.7 4.9 6.5 mT
100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mT
140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mT
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 19
Note: In the diagram “Magnetic switching points ver-
sus temperature”, the curves for BONmin,
BONmax, BOFFmin, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
V
mT
BON
BOFF
HAL 556
VDD
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
V
mT
BON
BOFF
HAL 556
VDD
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
1
2
3
4
5
6
7
8
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 4 V
VDD = 12 V
VDD = 24 V
mT
BON
BOFF
TA, TJ
HAL 556
Fig. 4–4: Magnetic switching points
versus temperature
HAL55x, HAL56x DATA SHEET
20 Aug. 29, 2011; DSH000026_005EN Micronas
4.2. HAL560
The HAL560 is a low-sensitive unipolar switching sen-
sor with an inverted output (see Fig. 4–5).
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to high current consumption if the mag-
netic field is removed. It does not respond to the mag-
netic north pole on the branded side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar inverted
– low sensitivity
– typical BON: 45.6 mT at room temperature
– typical BOFF: 51.7 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL560 is designed for applications with one
magnetic polarity and strong magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
– applications with strong magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–5: Definition of magnetic switching points for
the HAL560
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BON BOFF
0
IDDhigh
IDDlow
Current consumption
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 41 46.5 52 47 53 59 4 6.5 10 49.8 mT
25 °C 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mT
100 °C 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mT
140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mT
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 21
Note: In the diagram “Magnetic switching points ver-
sus temperature”, the curves for BONmin,
BONmax, BOFFmin, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
30
35
40
45
50
55
60
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL560
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
30
35
40
45
50
55
60
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL560
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
30
35
40
45
50
55
60
–50 0 50 100 150 200 °C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL560
VDD = 4 V
VDD = 12 V
VDD = 24 V
Fig. 4–8: Magnetic switching points
versus temperature
HAL55x, HAL56x DATA SHEET
22 Aug. 29, 2011; DSH000026_005EN Micronas
4.3. HAL566
The HAL566 is a very sensitive unipolar switching sen-
sor with an inverted output (see Fig. 4–9).
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to high current consumption if the mag-
netic field is removed. It does not respond to the mag-
netic north pole on the branded side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
In the HAL55x, HAL56x two-wire sensor family, the
HAL556 is a sensor with the same magnetic charac-
teristics but with a normal output characteristic.
Magnetic Features:
– switching type: unipolar inverted
– high sensitivity
– typical BON: 4 mT at room temperature
– typical BOFF: 5.9 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL566 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–9: Definition of magnetic switching points for
the HAL566
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BON BOFF
0
IDDhigh
IDDlow
Current consumption
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 −5−mT
25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 3 4.9 6.2 mT
100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 −4.7 −mT
140 °C 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 −4.4 −mT
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 23
Note: In the diagram “Magnetic switching points ver-
sus temperature”, the curves for BONmin,
BONmax, BOFFmin, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
V
mT
BON
BOFF
HAL 566
VDD
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 140 °C
V
mT
BON
BOFF
HAL 566
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
1
2
3
4
5
6
7
8
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 4 V
VDD = 12 V
VDD = 24 V
mT
BON
BOFF
TA, TJ
HAL 566
Fig. 4–12: Magnetic switching points
versus temperature
HAL55x, HAL56x DATA SHEET
24 Aug. 29, 2011; DSH000026_005EN Micronas
5. Application Notes
5.1. Application Circuit
Figure 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 4 V. With the maximum current
consumption of 17 mA, the maximum RL can be calcu-
lated as:
Fig. 5–1: Application circuit 1
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging
from 10 Ω to 30 Ω) and a capacitor both placed close
to the sensor are recommended (see Fig. 5–2). In this
case, the maximum RL can be calculated as:
Fig. 5–2: Application circuit 2
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Typically, the sensors operate with supply voltages
above 3 V. However, below 4 V, the current consump-
tion and the magnetic characteristics may be outside
the specification.
Note: The functionality of the sensor below 4 V is not
tested on a regular base. For special test condi-
tions, please contact Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 14). During the initialization time, the current con-
sumption is not defined and can toggle between low
and high.
HAL55x:
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current
consumption will be low if B is below BOFF.
HAL56x:
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and
high if B < BON.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be
either low or high after applying VDD. In order to
achieve a defined current consumption, the
applied magnetic field must be above BON,
respectively, below BOFF.
RLmax VSUPmin 4V–
17mA
---------------------------------=
2 or GND
x
VSUP
VSIG
RL
RLmax VSUPmin 4V–
17mA
---------------------------------RV
–=
1VDD
2 or GND
x
VSUP
VSIG
RL
RV
4.7 nF
DATA SHEET HAL55x, HAL56x
Micronas Aug. 29, 2011; DSH000026_005EN 25
5.4. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temper-
ature TA).
Under static conditions and continuous operation, the
following equation applies:
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from
30 μs to 1 ms, the following equation can be used:
5.5. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 5–3: Recommended EMC test circuit
TJTAΔT+=
ΔTI
DD VDD RTH
××=
TAmax TJmax ΔT–=
ΔTIDD VDD Rth ton
toff ton
+
--------------------
×××=
1VDD
2GND
VEMC 4.7 nF
RV2
30 Ω
RV1
100 Ω
HAL556, HAL560, HAL566 DATA SHEET
26 Aug. 29, 2011; DSH000026_005EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com
6. Data Sheet History
1. Data sheet: “HAL54x Hall-Effect Sensor Family”,
Nov. 27, 2002, 6251-605-1DS. First release of the
data sheet.
2. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, Aug. 3, 2000,
6251-425-2DS. Second release of the data sheet.
Major changes:
– magnetic characteristics for HAL556 and HAL560
changed. Please refer to pages 12 and 14 for
details.
– new temperature ranges “K” and “A” added
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced toler-
ances
– SMD package SOT-89A removed
3. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, Jan. 28, 2003,
6251-425-3DS. Third release of the data sheet.
Major changes:
– temperature range “A” removed
– outline dimensions for TO-92UA changed
4. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, May 14, 2004,
6251-425-4DS (DSH000026_001EN). Fourth
release of the data sheet. Major changes:
– new package diagrams for SOT89B-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
5. Data Sheet: “HAL556, HAL566 Two-Wire Hall-
Effect Sensor Family”, Dec. 19, 2008,
DSH000026_002EN. Fifth release of the data sheet.
Major changes:
– Section 1.6. on page 5 “Solderability and Welding
updated
– all package diagrams updated
– recommended footprint SOT89B-1 added
– HAL 560 removed.
6. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire
Hall-Effect Sensor Family”, Feb. 12, 2009,
DSH000026_005EN. Sixth release of the data
sheet. Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89B-1 was added).
7. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire
Hall-Effect Sensor Family”, Aug. 11, 2010,
DSH000026_004EN. Seventh release of the data
sheet. Major changes:
– Package outlines updated
– HAL 560 added.
8. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire
Hall-Effect Sensor Family”, Aug. 29, 2011,
DSH000026_005EN. Eighth release of the data
sheet. Major changes:
– Position of sensitive area for SOT89B-1 and
TO92UA-1/-2 package corrected
