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FEATURES
APPLICATIONS
DESCRIPTION
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK™TECHNOLOGY FOR USE WITH THE bq29312A
•Lifetime Data Logging•Patented Impedance Track™ Technology •38-Pin TSSOP (DBT)Accurately Measures Available Charge inLi-Ion and Li-Polymer Batteries
•Notebook PCs•Better than 1% Error Over Lifetime of theBattery
•Medical and Test Equipment•Portable Instrumentation•Instant Accuracy – No Learning CycleRequired
•Supports the Smart Battery Specification SBSV1.1
The bq20z80 SBS-compliant gas gauge IC,incorporating patented Impedance Track™•Works With the TI bq29312A Analog
technology, is designed for battery-pack or in-systemFront-End (AFE) Protection IC to Provide
installation. The bq20z80 measures and maintainsComplete Pack Electronics Solution
an accurate record of available charge in Li-ion or•Full Array of Programmable Voltage, Current,
Li-polymer batteries using its integratedand Temperature Protection Features
high-performance analog peripherals. The bq20z80monitors capacity change, battery impedance,•Integrated Time Base Removes Need for
open-circuit voltage, and other critical parameters ofExternal Crystal with Optional Crystal Input
the battery pack, and reports the information to the•Electronics for 7.2-V, 10.8-V or 14.4-V Battery
system host controller over a serial-communicationPacks With Few External Components
bus. It is designed to work with the bq29312A analog•Based on a Powerful Low-Power RISC CPU
front-end (AFE) protection IC to maximizeCore With High-Performance Peripherals
functionality and safety, and minimize componentcount and cost in smart battery circuits.•Integrated Field Programmable FLASHMemory Eliminates the Need for External
The Impedance Track technology continuouslyConfiguration Memory
analyzes the battery impedance, resulting in superiorgas-gauging accuracy. This enables remaining•Measures Charge Flow Using a
capacity to be calculated with discharge rate,High-Resolution, 16-Bit Integrating
temperature, and cell aging all accounted for duringDelta-Sigma Converter
each stage of every cycle.– Better Than 0.65 nVh of Resolution– Self-Calibrating
AVAILABLE OPTIONS– Offset Error Less Than 1 µV
PACKAGET
A•Uses 16-Bit Delta-Sigma Converter for
38-PIN TSSOP (DBT) 38-PIN TSSOP (DBT)Tube Tape and ReelAccurate Voltage and Temperature
–40 °C toMeasurements
bq20z80DBT-V102
(1)
bq20z80DBTR-V102
(2)85 °C•Extensive Data Reporting Options ForImproved System Interaction•Optional Pulse Charging Feature for ImprovedCharge Times•Drives 3-, 4- or 5-Segment LED Display forRemaining Capacity Indication
(1) A single tube quantity is 50 units.•Supports SHA-1 Authentication (2) A single reel quantity is 2000 units
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.Impedance Track is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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SYSTEM DIAGRAM
LDO, ThermOutputDrive&UVLO
PowerManagement
LDO, TOUT,andPowerModecontrol
I2C
Impedance Track(TM)+LifetimeDataLogging
SMBus
Pack+
Pack-
Discharge/Charge/
PrechargeFETs
CellandPack
Voltage
Measurement
Precharge
FET Drive
2-TierOvercurrentProtection
32-kHzClock
Generator
bq20z80
768Bytesof
UserFlash
Fuse
1stLevelOVand
UVProtection
PackUndervoltage
PowerMode
Control
PrechargeControl
DelayCounters
CellBalancing AlgorithmandControl
CellBalancing
Drive
SystemInterface
SystemWatchdog
VoltageLevel Translator
SystemInterface
32kHz
PowerModeControl
Fail-SafeProtection
T1
1st LevelOC
Protection
TemperatureMeasurement
<1%Error
TINT
SupplyV oltage
bq29312A
PCHFET Drive
RAMRegisters
SBSv1.1Data
bq29312RAM/CommsValidation
2ndLevelOvervoltageProtection
bq294xx
XAlert
Sleep
SenseResistor
(5m-20mWtyp)
PFInput
1
2
7
6
5
4
3
38
37
36
35
34
33
32
VIN
TS1
TS2
PU
PRES
SCLK
VSSD
NC
NC
CLKOUT
XCK1/VSSA
XCK2/ROSC
FILTSAFE
VDDD VDDA
RBI
SDATA
VSSD
SAFE SR2
SR1
VSSA
VSSA
8
9
10
11
12
31
30
29
28
27
13
14
19
18
17
16
15
26
25
24
23
22
21
20
NC
NC
SMBC
SMBD
DISP
PFIN
MRST
XALERT
LED1
LED2
LED3
LED4
LED5VSSD
NC-Nointernalconnection
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
TSSOP (DBT)(TOP VIEW)
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
TERMINAL FUNCTIONS
TERMINAL
I/O
(1)
DESCRIPTIONNO. NAME
1 VIN I Voltage measurement input from the AFE2 TS1 I 1
st
Thermistor voltage input connection to monitor temperature3 TS2 I 2
nd
Thermistor voltage input connection to monitor temperature4 PU O Output to pull up the PRES pin for system detection5 PRES I Active low input to sense system insertion and typically requires additional ESD protection6 SCLK I/OD Communication clock to the AFE7 SAFE O Active high output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 12)8 VDDD P Positive supply for digital circuitry and I/O pinsBackup power to the bq20z80 data registers during periods of low operating voltage. RBI accepts a9 RBI P
storage capacitor or a battery input.10 SDATA I/O Data transfer to and from the AFE12 SAFE O Active low output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 7)13 NC – Not used— leave floating14 NC – Not used— leave floating15 SMBC I/OD SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the bq20z8016 SMBD I/OD SMBus data open-drain bidirectional pin used to transfer address and data to and from the bq20z80Display control for the LEDs. This pin is typically connected to bq29312A REG via a 100-k Ωresistor17 DISP I
and a push-button switch to VSSD.Active low input to detect secondary protector output status and allows the bq20z80 to report the18 PFIN I
status of the 2
nd
level protection output20 LED5 O LED5 display segment that drives an external LED depending on the firmware configuration21 LED4 O LED4 display segment that drives an external LED depending on the firmware configuration22 LED3 O LED3 display segment that drives an external LED depending on the firmware configuration23 LED2 O LED2 display segment that drives an external LED depending on the firmware configuration24 LED1 O LED1 display segment that drives an external LED depending on the firmware configuration25 XALERT I Input from bq29312A XALERT output.26 MRST I Master reset input that forces the device into reset when held highConnections for a small-value sense resistor to monitor the battery charge- and discharge-current27 SR2 IA
flow
Connections for a small-value sense resistor to monitor the battery charge- and discharge-current28 SR1 IA
flow31 VDDA P Positive supply for analog circuitryAnalog input connected to the external PLL filter components which are a 150-pF capacitor to V
SSA
,32 FILT IA in parallel with a 61.9-k Ωresistor and a 2200-pF capacitor in series. Place these components asclose as possible to the bq20z80 to ensure optimal performance.32.768-kHz crystal oscillator output pin or connected to a 100k, 50ppm or better resistor if the33 XCK2/ROSC O
internal oscillator is used34 XCK1/VSSA I 32.768-kHz crystal oscillator input pin or connected to VSSA if the internal oscillator is used35 CLKOUT O 32.768-kHz output for the bq29312. This pin should be directly connected to the AFE.36, 37 NC - Not used— leave floating11, 19, 38 VSSD P Negative supply for digital circuitry29, 30 VSSA P Negative supply for analog circuitry.
(1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
over operating free-air temperature range (unless otherwise noted)
(1)
RANGE
V
DDA
and V
DDD
relative to V
SS
(2)
Supply voltage range –0.3 V to 4.1 VV
(IOD)
relative to V
SS
(2)
Open-drain I/O pins –0.3 V to 6 VV
I
relative to V
SS
(2)
Input voltage range to all other pins –0.3 V to VDDA + 0.3 VT
A
Operating free-air temperature range –40 °C to 85 °CT
stg
Storage temperature range –65 °C to 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) V
SS
refers to the common node of V
(SSA)
and V
(SSD)
.
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
DD
Supply voltage VDDA and VDDD 3 3.3 3.6 VNo flash programming 350
(1)I
DD
Operating mode current µAbq20z80 + bq29312A 375Sleep mode 8
(1)I
(SLP)
Low-power storage mode current µAbq20z80 + bq29312A 28Shutdown Mode 0.1
(1)I
(SLP)
Shutdown Current µAbq20z80 + bq29312A 0.1Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE, I
OL
= 0.5 mA 0.4
VSAFE, PUV
OL
LED1 – LED5 I
OL
= 10 mA 0.4 VV
OH
Output high voltage, SMBC, SMBD, SDATA, SCLK, SAFE, I
OH
= –1 mA V
DD
– 0.5
VSAFE, PUV
IL
Input voltage low SMBC, SMBD, SDATA, SCLK, XALERT, –0.3 0.8
VPRES, PFINDISP –0.3 0.8 VV
IH
Input voltage high SMBC, SMBD, SDATA, SCLK, XALERT, 2 6
VPRES, PFINDISP 2 V
DD
+ 0.3 VC
IN
Input capacitance 5 pFV
(AI1)
Input voltage range VIN, TS1, TS2 V
SS
– 0.3 0.8 x V
DD
VV
(AI2)
Input voltage range SR1, SR2 V
SS
– 0.25 0.25Z
(AI1)
Input impedance SR1, SR2 0 V–1 V 2.5 M ΩZ
(AI2)
Input impedance VIN, TS1, TS2 0 V–1 V 8 M Ω
(1) This value does not include the bq29312A
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POWER-ON RESET
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
-20 -10 0 10 20 30 40 50 60 70 80 100
105
110
115
120
125
130
135
140
TA - Free-Air Temperature - °C
- Negative Going Input Threshold Voltage - V
POWER ON RESET BEHAVIOR
vs
FREE-AIR TEMPERATURE
VIT
VIT-
Vhys
Vhys- Hysterisis Voltage - mV
INTEGRATING ADC (Coulomb Counter) CHARACTERISTICS
PLL SWITCHING CHARACTERISTICS
OSCILLATOR
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IT–
Negative-going voltage input 2.1 2.3 2.5 VV
HYS
Power-on reset hysteresis 50 150 200 mV
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(SR)
Input voltage range, V
(SR2)
and V
(SR1)
V
(SR)
= V(SR2) – V(SR1) –0.25 0.25 VV
(SROS)
Input offset 1 µVINL Integral nonlinearity error 0.004% 0.019%
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
(SP)
Start-up time
(1)
0.5% frequency error 2 5 ms
(1) The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally4.194 MHz.
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ROSC = 100 k Ω–2% 0.25% 2%f
(exo)
Frequency error from 32.768 kHz ROSC = 100 k Ω, V
DD
= 3.3 V –1% 0.25% 1%XCK1 = 12-pF XTAL –0.25% 0.25%ROSC = 100 k Ω250 µsf
(sxo)
Start-up time
(1)
XCK1 = 12-pF XTAL 200 ms
(1) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
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DATA FLASH MEMORY CHARACTERISTICS
REGISTER BACKUP
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
DR
Data retention See
(1)
10 YearsFlash programming write-cycles See
(1)
20,000 Cyclest
(WORDPROG)
Word programming time See
(1)
2 msI
(DDPROG)
Flash-write supply current See
(1)
8 15 mA
(1) Assured by design. Not production tested
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
(RBI)
RBI data-retention input current V
(RBI)
> 3 V, V
DD
< V
IT
10 100 nAV
(RBI)
RBI data-retention voltage
(1)
1.3 V
(1) Specified by design. Not production tested.
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SMBus TIMING SPECIFICATIONS
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
V
DD
= 3 V to 3.6 V, T
A
= –40 °C to 85 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
SMB
SMBus operating frequency Slave mode, SMBC 50% duty cycle 10 100
kHzf
MAS
SMBus master clock frequency Master mode, no clock low slave extend 51.2t
BUF
Bus free time between start and stop 4.7t
HD:STA
Hold time after (repeated) start 4
µst
SU:STA
Repeated start setup time 4.7t
SU:STO
Stop setup time 4Receive mode 0t
HD:DAT
Data hold time
Transmit mode 300 nst
SU:DAT
Data setup time 250t
TIMEOUT
Error signal/detect See
(1)
25 35 mst
LOW
Clock low period 4.7
µst
HIGH
Clock high period See
(2)
4 50t
LOW:SEXT
Cumulative clock low slave extend time See
(3)
25
mst
LOW:MEXT
Cumulative clock low master extend time See
(4)
10t
F
Clock/data fall time (V
ILMAX
– 0.15 V) to (V
IHMIN
+ 0.15 V) 300
nst
R
Clock/data rise time 0.9 VDD to (VILMAX – 0.15 V) 1000
(1) The bq20z80 times out when any clock low exceeds t
TIMEOUT
.(2) t
HIGH:MAX
. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving the bq20z80 that is in progress.(3) t
LOW:SEXT
is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.(4) t
LOW:MEXT
is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.
SMBus TIMING DIAGRAM
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FEATURE SET
Primary (1st Level) Safety Features
Secondary (2nd Level) Safety Features
Charge Control Features
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
NOTE:
The bq20z80-V102 is designed to work with the bq29312A AFE. The bq20z80features are only available with the bq29312A.
.
The bq20z80 supports a wide range of battery and system protection features that can easily be configured. Theprimary safety features includes:
•Battery cell over/under voltage protection•Battery pack over/under voltage protection•2 independent charge overcurrent protection•3 independent discharge overcurrent protection•Short circuit protection•Over temperature protection•Host watchdog
The secondary safety features of the bq20z80 can be used to indicate more serious faults via the SAFE (pin 7)and SAFE (pin 12) pins. These pins can be used to blow a in-line fuse to permanently disable the battery packfrom charging or discharging. The secondary safety features includes:
•Safety over voltage•Battery cell imbalance•2nd level protection IC input•Safety over current•Safety over temperature•Open thermistor•Charge FET and 0 Volt Charge FET fault•Discharge FET fault•Fuse blow failure detection•AFE communication error•Internal flash data error
The bq20z80 charge control features includes:
•Report the appropriate charging current needed for constant current charging and the appropriate chargingvoltage needed for constant voltage charging to a smart charger using SMBus broadcasts.•Determines the chemical state of charge of each battery cell using Impendance Track™ and can reduce thecharge difference of the battery cells in fully charged state of the battery pack gradually using cell balancingalgorithm during charging. This prevents fully charged cells from overcharging causing excessive degredationand also increases the usable pack energy by preventing to early charge termination•supports pre-charging/zero-volt charging•support fast charging•supports pulse charging•detects charge termination•report charging faults and also indicate charge status via charge and discharge alarms.
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Gas Gauging
LED Display
LifeTime Data Logging Features
Authentication
Power Modes
CONFIGURATION
Oscillator Function
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
FEATURE SET (continued)
The bq20z80 uses the Impedance Track™ Technology to measure and calculate the available charge in batterycells. The archievable accuracy is better than the coloumb counting method over the lifetime of the battery andthere is no full charge discharge learning cycle required.
See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note(SLUA364) for further details.
The bq20z80 can drive 3-, 4-, or 5- segment LED display for remaining capacity indication.
The bq20z80 offers a lifetime data logging array, where all important measurements are stored for warranty andanalysis purposes. The data monitored includes:
•Lifetime maximum temperature•Lifetime minimum temperature•Lifetime maximum battery cell voltage•Lifetime minimum battery cell voltage•Lifetime maximum battery pack voltage•Lifetime minimum battery pack voltage•Lifetime maximum charge current•Lifetime maximum discharge current•Lifetime maximum charge power•Lifetime maximum discharge power•Lifetime maximum average discharge current•Lifetime maximum average discharge power•Lifetime average temperature
The bq20z80 supports authentication by the host using SHA-1.
The bq20z80 supports 3 different power modes to reduce power consumption:
•In Normal Mode, the bq20z80 performs measurements, calculations, protection decicions, data update in 1second intervals. Between these intervals, the bq20z80 is in a reduced power stage.•In Sleep Mode, the bq20z80 performs measurements, calculations, protection decicions, data update inadjustable time intervals. Between these intervals, the bq20z80 is in a reduced power stage.•In Shutdown Mode the bq20z80 is completety disabled.
The oscillator of the bq20z80 can be set up for internal or external operation. On power up, the bq20z80automatically attempts to start the internal oscillator. If a 100-k Ωresistor is not connected to ROSC (pin 33),then it attempts to start the oscillator using an external 32.768-kHz crystal.
NOTE:
Install either the 100-k ΩROSC resistor or the 12-pF, 32.768-kHz crystal. Do notinstall both.
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System Present Operation
BATTERY PARAMETER MEASUREMENTS
Charge and Discharge Counting
Voltage
Current
Auto Calibration
Temperature
COMMUNICATIONS
SMBus On and Off State
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
FEATURE SET (continued)The performance of the internal oscillator depends on the tolerance of the 100-k Ωresistor between RSOC (pin33) and VSSA (pin 34). Choose a resistor with a tolerance of ±0.1%, and 50-ppm or better temperature drift.Place this resistor as close as possible to the bq20z80. If a 12-pF crystal is used, place it as close as possible tothe XCK1 (pin 34) and XCK2 (pin 33) pins. If not properly implemented, the PCB layout in this area can degradeoscillator performance.
The bq20z80 pulls the PU pin high periodically (1 s). Connect this pin to the PRES pin of the bq20z80 via aresistor of approximately 5 k Ω. The bq20z80 measures the PRES input during the PU-active period to determineits state. If PRES input is pulled to ground by external system, the bq20z80 detects this as system present.
The bq20z80 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and asecond delta-sigma ADC for individual cell and battery voltage, and temperature measurement.
The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltagedrop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolarsignals from -0.25 V to 0.25 V. The bq20z80 detects charge activity when V
SR
= V
(SR1)
-V
(SR2)
is positive anddischarge activity when V
SR
= V
(SR1)
-V
(SR2)
is negative. The bq20z80 continuously integrates the signal overtime, using an internal counter. The fundamental rate of the counter is 0.65 nVh.
The bq20z80 updates the individual series cell voltages through the bq29312A at one second intervals. Thebq20z80 configures the bq29312A to connect the selected cell, cell offset, or bq29312A VREF to the CELL pinof the bq29312A, which is required to be connected to VIN of the bq20z80. The internal ADC of the bq20z80measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the impedanceof the cell for the Impedance Track™ gas-gauging.
The bq20z80 uses the SR1 and SR2 inputs to measure and calculate the battery charge and discharge currentusing a 5 m Ωto 20 m Ωtyp. sense resistor.
The bq20z80 provides an auto-calibration feature to cancel the voltage offset error across SR1 and SR2 formaximum charge measurement accuracy. The bq20z80 performs auto-calibration when the SMBus lines staylow continuously for a minimum of 5 s.
The bq20z80 TS1 and TS2 inputs, in conjunction with two identical NTC thermistors (default are Semitec103AT), measure the battery environmental temperature. The bq20z80 can also be configured to use its internaltemperature sensor.
The bq20z80 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBSspecification.
The bq20z80 detects an SMBus off state when SMBC and SMBD are logic-low greater than an adjustableperiod of time. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, thecommunication bus is available.
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SBS and Dataflash Values
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
FEATURE SET (continued)
Table 1. SBS COMMANDS
SBS Cmd Mode Name Format Size in Min Max Default Value UnitBytes Value Value
0x00 R/W ManufacturerAccess hex 2 0x0000 0xffff —0x01 R/W RemainingCapacityAlarm unsigned int 2 0 65535 — mAh or10mWh0x02 R/W RemainingTimeAlarm unsigned int 2 0 65535 — min0x03 R/W BatteryMode hex 2 0x0000 0xffff —0x04 R/W AtRate signed int 2 -32768 32767 — mA or 10mW0x05 R AtRateTimeToFull unsigned int 2 0 65535 — min0x06 R AtRateTimeToEmpty unsigned int 2 0 65535 — min0x07 R AtRateOK unsigned int 2 0 65535 —0x08 R Temperature unsigned int 2 0 65535 — 0.1 °K0x09 R Voltage unsigned int 2 0 20000 — mV0x0a R Current signed int 2 -32768 32767 — mA0x0b R AverageCurrent signed int 2 -32768 32767 — mA0x0c R MaxError unsigned int 1 0 100 — %0x0d R RelativeStateOfCharge unsigned int 1 0 100 — %0x0e R AbsoluteStateOfCharge unsigned int 1 0 100 — %0x0f R RemainingCapacity unsigned int 2 0 65535 — mAh or10mWh0x10 R FullChargeCapacity unsigned int 2 0 65535 — mAh or10mWh0x11 R RunTimeToEmpty unsigned int 2 0 65535 — min0x12 R AverageTimeToEmpty unsigned int 2 0 65535 — min0x13 R AverageTimeToFull unsigned int 2 0 65535 — min0x14 R ChargingCurrent unsigned int 2 0 65535 — mA0x15 R ChargingVoltage unsigned int 2 0 65535 — mV0x16 R BatteryStatus unsigned int 2 0x0000 0xffff —0x17 R/W CycleCount unsigned int 2 0 65535 —0x18 R/W DesignCapacity unsigned int 2 0 65535 mAh or10mWh0x19 R/W DesignVoltage unsigned int 2 7000 16000 14400 mV0x1a R/W SpecificationInfo unsigned int 2 0x0000 0xffff 0x00310x1b R/W ManufactureDate unsigned int 2 0 65535 00x1c R/W SerialNumber hex 2 0x0000 0xffff 0x00010x20 R/W ManufacturerName String 11+1 — — Texas Instruments ASCII0x21 R/W DeviceName String 7+1 — — bq20z80 ASCII0x22 R/W DeviceChemistry String 4+1 — — LION ASCII0x23 R ManufacturerData String 14+1 — — — ASCII0x2f R/W Authenticate String 20+1 — — — ASCII0x3c R CellVoltage4 unsigned int 2 0 65535 mV0x3d R CellVoltage3 unsigned int 2 0 65535 mV0x3e R CellVoltage2 unsigned int 2 0 65535 mV0x3f R CellVoltage1 unsigned int 2 0 65535 mV
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 2. EXTENDED SBS COMMANDS
SBS Mode Name Format Size in Min Value Max Value Default Value UnitCmd Bytes
0x45 R AFEData String 11+1 — — — ASCII0x46 R/W FETControl hex 1 0x00 0xff —0x4f R StateOfHealth unsigned int 1 0 100 — %0x50 R SafetyAlert hex 2 0x0000 0xffff —0x51 R SafetyStatus hex 2 0x0000 0xffff —0x52 R PFAlert hex 2 0x0000 0xffff —0x53 R PFStatus hex 2 0x0000 0xffff —0x54 R OperationStatus hex 2 0x0000 0xffff —0x55 R ChargingStatus hex 2 0x0000 0xffff —0x57 R ResetData hex 2 0x0000 0xffff —0x58 R WDResetData unsigned int 2 0 65535 —0x5a R PackVoltage unsigned int 2 0 65535 — mV0x5d R AverageVoltage unsigned int 2 0 65535 mV0x60 R/W UnSealKey hex 4 0x00000000 0xffffffff —0x62 R/W PFKey hex 4 0x00000000 0xffffffff —0x63 R/W AuthenKey3 hex 4 0x00000000 0xffffffff —0x64 R/W AuthenKey2 hex 4 0x00000000 0xffffffff —0x65 R/W AuthenKey1 hex 4 0x00000000 0xffffffff —0x66 R/W AuthenKey0 hex 4 0x00000000 0xffffffff —0x70 R/W ManufacturerInfo String 8+1 — — —0x71 R/W SenseResistor unsigned int 2 0 65535 — µ Ω0x77 R/W DataflashClass hex 2 0x0000 0xffff —0x78 R/W DataFlashSubClass1 hex 32 — — —0x79 R/W DataFlashSubClass2 hex 32 — — —0x7a R/W DataFlashSubClass3 hex 32 — — —0x7b R/W DataFlashSubClass4 hex 32 — — —0x7c R/W DataFlashSubClass5 hex 32 — — —0x7d R/W DataFlashSubClass6 hex 32 — — —0x7e R/W DataFlashSubClass7 hex 32 — — —0x7f R/W DataFlashSubClass8 hex 32 — — —
Table 3. DATAFLASH VALUESClass Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
1st Level 0 Voltage 0 COV Threshold U2 3700 5000 4300 mVSafety
2 COV Time U1 0 60 2 Sec
3 COV Recovery U2 0 4400 3900 mV
5 COV Delta U1 0 200 20 mV
6 COV Temp. Hys U1 0 250 100 0.1 °C
7 POV Threshold U2 0 18000 17500 mV
9 POV Time U1 0 60 2 Sec
10 POV Recovery U2 0 17000 16000 mV
12 CUV Threshold U2 0 3500 2200 mV
14 CUV Time U1 0 60 2 Sec
15 CUV Recovery U2 0 3600 3000 mV
17 PUV Threshold U2 0 16000 11000 mV
19 PUV Time U1 0 60 2 Sec
20 PUV Recovery U2 0 16000 12000 mV
12
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
1st Level 1 Current 0 OC (1st Tier) Chg U2 0 20000 6000 mASafety
2 OC (1st Tier) Chg Time U1 0 60 2 sec
3 OC Chg Recovery I2 -1000 1000 200 mA
5 OC (1st Tier) Dsg U2 0 20000 6000 mA
7 OC (1st Tier) Dsg Time U1 0 60 2 sec
8 OC Dsg Recovery U2 0 1000 200 mA
10 OC (2nd Tier) Chg U2 0 20000 8000 mA
12 OC (2nd Tier) Chg Time U1 0 60 2 Sec
13 OC (2nd Tier) Dsg U2 0 22000 8000 mA
15 OC (2nd Tier) Dsg Time U1 0 60 2 Sec
16 Current Recovery Time U1 0 60 8 Sec
17 AFE OC Dsg H1 0x00 0x1f 0x12 hex
18 AFE OC Dsg Time H1 0x00 0x0f 0x0f hex
19 AFE OC Dsg Recovery U2 10 1000 100 mA
21 AFE SC Chg Cfg H1 0x00 0xff 0x77 hex
22 AFE SC Dsg Cfg H1 0x00 0xff 0x77 hex
23 AFE SC Recovery U2 0 200 1 mA
1st Level 2 Temperature 0 Over Temp Chg U2 0 1200 550 0.1 °CSafety
2 OT Chg Time U1 0 60 2 Sec
3 OT Chg Recovery U2 0 1200 500 0.1 °C
5 Over Temp Dsg U2 0 1200 600 0.1 °C
7 OT Dsg Time U1 0 60 2 Sec
8 OT Dsg Recovery U2 0 1200 550 0.1 °C
1st Level 3 Host Comm 0 Host Watchdog Timeout U1 0 255 0 SecSafety
2nd Level 16 Voltage 0 SOV Threshold U2 0 20000 18000 mVSafety
2 SOV Time U1 0 30 0 Sec
3 Cell Imbalance Current U1 0 200 5 mA
4 Cell Imbalance Fail Voltage U2 0 5000 1000 mV
6 Cell Imbalance Time U1 0 30 0 Sec
7 Battery Rest Time U2 0 65535 1800 Sec
9 PFIN Detect Time U1 0 30 0 Sec
2nd Level 17 Current 0 SOC Chg U2 0 30000 10000 mASafety
2 SOC Chg Time U1 0 30 0 Sec
3 SOC Dsg U2 0 30000 10000 mA
5 SOC Dsg Time U1 0 30 0 Sec
2nd Level 18 Temperature 0 SOT Chg U2 0 1200 650 0.1 °CSafety
2 SOT Chg Time U1 0 30 0 Sec
3 SOT Dsg U2 0 1200 750 0.1 °C
5 SOT Dsg Time U1 0 30 0 Sec
6 Open Thermistor I2 -1000 1200 -333 0.1 °C
8 Open Time I1 0 30 0 Sec
2nd Level 19 FET Verification 0 FET Fail Limit U2 0 500 20 mASafety
2 FET Fail Time U1 0 30 0 Sec
2nd Level 20 AFE Verification 0 AFE Check Time U1 0 255 0 SecSafety
1 AFE Fail Limit U1 0 255 10 cnt
2 AFE Fail Recovery Time U1 0 255 20 Sec
3 AFE Init Retry Limit U1 0 255 6 num
4 AFE Init Limit U1 0 255 20 cnt
2nd Level 21 Fuse Verification 0 Fuse Fail Limit U2 0 20 2 mASafety
2 Fuse Fail Time U1 0 30 0 Sec
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
Charge 32 Charge Inhibit 0 Chg Inhibit Temp Low I2 -400 1200 0 0.1 °CControl Cfg
2 Chg Inhibit Temp High I2 -400 1200 450 0.1 °C
4 Temp Hys I2 0 100 10 0.1 °C
Charge 33 Pre-Charge Cfg 0 Pre-chg Current U2 0 2000 250 mAControl
2 Pre-chg Temp I2 -400 1200 120 0.1 °C
4 Pre-chg Voltage U2 0 20000 3000 mV
6 Recovery Voltage U2 0 20000 3100 mV
Charge 34 Fast Charge Cfg 0 Fast Charge Current U2 0 10000 4000 mAControl
2 Charging Voltage U2 0 20000 16800 mV
4 Over Charging Voltage U2 0 2000 500 mV
6 Delta Temp I2 0 500 50 0.1 °C
8 Suspend Low Temp I2 -400 1200 -50 0.1 °C
10 Suspend High Temp I2 -400 1200 550 0.1 °C
Charge 35 Pulse Charge 0 Turn ON Voltage U2 0 5000 4150 mVControl Cfg
2 Turn OFF Voltage U2 0 5000 4250 mV
4 Max ON Pulse Time U1 0 240 240 S/4
5 Min OFF Pulse Time U1 0 240 0 S/4
6 Max OFF Voltage U2 0 5000 4270 mV
Charge 36 Termination Cfg. 0 Maintenance Current U2 0 1000 0 mAControl
2 Taper Current U2 0 1000 250 mA
6 Termination Voltage U2 0 1000 300 mV
8 Current Taper Window U1 0 60 40 Sec
9 TCA Set % I1 -1 100 -1 %
10 TCA Clear % I1 -1 100 95 %
11 FC Set % I1 -1 100 -1 %
12 FC Clear % I1 -1 100 98 %
Charge 37 Cell Balancing 0 Min Cell Deviation U2 0 65535 1750 Sec/mAHControl Cfg
Charge 38 Charging Faults 0 Over Charging Voltage U2 0 3000 500 mVControl
2 Over Charging Volt Time U1 0 60 2 Sec
3 Over Charging Current U2 0 2000 500 mA
5 Over Charging Curr Time U1 0 60 2 Sec
6 Over Charging Curr Recov U2 0 2000 100 mA
8 Depleted Voltage U2 0 16000 8000 mV
10 Depleted Voltage Time U1 0 60 2 Sec
11 Depleted Recovery U2 0 16000 8500 mV
13 Over Charge Capacity U2 0 4000 300 mAh
15 Over Charge Recovery U2 0 100 2 mAh
17 FC-MTO U2 0 65535 10800 Sec
19 PC-MTO U2 0 65535 3600 Sec
21 Charge Fault Cfg H1 0x00 0xff 0
14
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
SBS 48 Data 0 Rem Cap Alarm U2 0 700 300 mAhConfiguration
2 Rem Time Alarm U2 0 30 10 Min
4 Init Battery Mode H2 0x0000 0xffff 0x0081 hex
6 Design Voltage U2 7000 18000 14400 mV
8 Spec Info H2 0x0000 0xffff 0x0031 hex
10 Manuf Date U2 0 65355 0 date
12 Ser. Num. H2 0x0000 0xffff 0x0001 hex
14 Cycle Count U2 0 65355 0 cnt
16 CC Threshold I2 100 32767 4400 mAh
18 CC % U1 0 100 90 %
19 CF MaxError Limit U1 0 100 100 %
20 Design Capacity U2 0 65355 4400 mAh
22 Design Energy U2 0 65355 6336 10mWh
24 Manuf Name S12 - - Texas Inst.
36 Device Name S8 - - bq20z80
44 Device Chemistry S5 - - LION
SBS 49 Configuration 0 TDA Set % I1 -1 100 6 %Configuration
1 TDA Clear % I1 -1 100 8 %
2 FD Set % I1 -1 100 2 %
3 FD Clear % I1 -1 100 5 %
4 TDA Set Volt Threshold U2 0 16800 5000 mV
6 TDA Set Volt Time U1 0 60 5 Sec
7 TDA Clear Volt U2 0 16800 5500 mV
9 FD Set Volt Threshold U2 0 16800 5000 mV
11 FD Volt Time U1 0 60 5 Sec
12 FD Clear Volt U2 0 16800 5500 mV
System Data 56 Manufacturer 0 Pack Lot Code H2 0x0000 0xffff 0x0000Data
2 PCB Lot Code H2 0x0000 0xffff 0x0000
4 Firmware Version H2 0x0000 0xffff 0x0000
6 Hardware Revision H2 0x0000 0xffff 0x0000
8 Cell Revision H2 0x0000 0xffff 0x0000
System Data 58 Manufacturer 0 Manuf. Info S9 - - 12345678Info
System Data 59 LifeTime Data 0 Lifetime Max Temp I2 0 1400 300 0.1 °C
2 Lifetime Min Temp I2 -600 1400 200 0.1 °C
4 Lifetime Max Cell Voltage U2 0 65535 3500 mV
6 Lifetime Min Cell Voltage U2 0 65535 3200 mV
8 Lifetime Max Pack Voltage U2 0 65535 14000 mV
10 Lifetime Min Pack Voltage U2 0 65535 12800 mV
12 Lifetime Max Chg Current I2 -32768 32767 1500 mA
14 Lifetime Max Dsg Current I2 -32768 32767 -3000 mA
16 Lifetime Max Chg Power I2 -32768 32767 1500 10mW
18 Lifetime Max Dsg Power I2 -32768 32767 -1500 10mW
22 Life Max AvgDsg Cur I2 -32768 32767 -1000 mA
26 Life Max AvgDsg Pow I2 -32768 32767 -1500 10mW
28 Lifetime Avg Temp I2 0 1400 250 0.1 °C
System Data 60 LifeTime Temp 0 LT Temp Samples U4 0 140000000 0 numSamples
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
Configuration 64 Registers 0 Operation Cfg A H2 0x0000 0xffff 0x0F29
2 Operation Cfg B H2 0x0000 0xffff 0x6440
4 Permanent Fail Cfg H2 0x0000 0xffff 0x0000
6 Non-Removable Cfg H2 0x0000 0xffff 0x0000 hex
LED Support 67 LED Cfg 0 LED Flash Rate U2 0 65535 512 500 µs
2 LED Blink Rate U2 0 65535 1024 500 µs
4 LED Delay U2 1 65535 100 500 µs
6 LED Hold Time U1 0 255 4 s
7 CHG Flash Alarm I1 -1 101 10 %
8 CHG Thresh 1 I1 -1 101 0 %
9 CHG Thresh 2 I1 -1 101 20 %
10 CHG Thresh 3 I1 -1 101 40 %
11 CHG Thresh 4 I1 -1 101 60 %
12 CHG Thresh 5 I1 -1 101 80 %
13 DSG Flash Alarm I1 -1 101 10 %
14 DSG Thresh 1 I1 -1 101 0 %
15 DSG Thresh 2 I1 -1 101 20 %
16 DSG Thresh 3 I1 -1 101 40 %
17 DSG Thresh 4 I1 -1 101 60 %
18 DSG Thresh 5 I1 -1 101 60 %
Power 68 Power 0 Flash Update OK Voltage U2 6000 20000 7500 mV
2 Shutdown Voltage U2 5000 20000 7000 mV
4 Shutdown Time U1 0 60 10 Sec
5 Charger Present U2 0 23000 12000 mV
7 Sleep Current U2 0 100 10 mA
9 Bus Low Time U1 0 255 5 Sec
10 Cal Inhibit Temp Low I2 -400 1200 50 0.1 °C
12 Cal Inhibit Temp High I2 -400 1200 450 0.1 °C
14 Sleep Voltage Time U1 0 100 5 Sec
15 Sleep Current Time U1 0 255 20 Sec
Gas Gauging 80 IT Cfg 0 Load Select U1 0 255 3 num
1 Load Mode U1 0 255 0 num
45 Term Voltage I2 -32768 32767 12000 mV
60 User Rate-mA I2 -9000 -2000 0 mA
62 User Rate-mW I2 -14000 -3000 0 10mW
64 Reserve Cap-mAh I2 0 9000 0 mAh
66 Reserve Cap-mWh I2 0 14000 0 10mWh
Gas Gauging 81 Current 0 Dsg Current Threshold U2 0 2000 100 mAThresholds
2 Chg Current Threshold U2 0 2000 50 mA
4 Quit Current U2 0 1000 10 mA
6 Dsg Relax Time U1 0 255 1 Sec
7 Chg Relax Time U1 0 255 60 Sec
16
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
Gas Gauging 82 State 0 Qmax Cell 0 U2 0 65535 4400 mAh
2 Qmax Cell 1 U2 0 65535 4400 mAh
4 Qmax Cell 2 U2 0 65535 4400 mAh
6 Qmax Cell 3 U2 0 65535 4400 mAh
8 Qmax Pack U2 0 65535 4400 mAh
12 Update Status H1 0x00 0x06 0x00 num
21 Avg I Last Run I2 -32768 32767 -2000 mA
23 Avg P Last Run I2 -32768 32767 -3022 10mW
25 Delta Voltage I2 -32768 32767 0 mV
Ra Table 88 R_a0 0 Cell0 R_a flag H2 0x0000 0xffff 0xff55
2 Cell0 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 Cell0 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 Cell0 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 Cell0 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 Cell0 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 Cell0 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 Cell0 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 Cell0 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 Cell0 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 Cell0 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 Cell0 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 Cell0 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 Cell0 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 Cell0 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 Cell0 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 89 R_a1 0 Cell1 R_a flag H2 0x0000 0xffff 0xff55
2 Cell1 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 Cell1 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 Cell1 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 Cell1 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 Cell1 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 Cell1 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 Cell1 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 Cell1 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 Cell1 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 Cell1 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 Cell1 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 Cell1 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 Cell1 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 Cell1 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 Cell1 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 90 R_a2 0 Cell2 R_a flag H2 0x0000 0xffff 0xff55
2 Cell2 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 Cell2 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 Cell2 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 Cell2 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 Cell2 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 Cell2 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 Cell2 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 Cell2 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
18 Cell2 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 Cell2 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 Cell2 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 Cell2 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 Cell2 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 Cell2 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 Cell2 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 91 R_a3 0 Cell3 R_a flag H2 0x0000 0xffff 0xff55
2 Cell3 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 Cell3 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 Cell3 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 Cell3 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 Cell3 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 Cell3 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 Cell3 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 Cell3 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 Cell3 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 Cell3 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 Cell3 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 Cell3 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 Cell3 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 Cell3 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 Cell3 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 92 R_a0x 0 xCell0 R_a flag H2 0x0000 0xffff 0xffff
2 xCell0 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 xCell0 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 xCell0 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 xCell0 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 xCell0 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 xCell0 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 xCell0 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 xCell0 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 xCell0 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 xCell0 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 xCell0 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 xCell0 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 xCell0 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 xCell0 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 xCell0 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 93 R_a1x 0 xCell1 R_a flag H2 0x0000 0xffff 0xffff
2 xCell1 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 xCell1 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 xCell1 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 xCell1 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 xCell1 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 xCell1 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 xCell1 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 xCell1 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 xCell1 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 xCell1 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
18
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Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
22 xCell1 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 xCell1 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 xCell1 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 xCell1 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 xCell1 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 94 R_a2x 0 xCell2 R_a flag H2 0x0000 0xffff 0xffff
2 xCell2 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 xCell2 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 xCell2 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 xCell2 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 xCell2 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 xCell2 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 xCell2 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 xCell2 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 xCell2 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 xCell2 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 xCell2 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 xCell2 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 xCell2 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 xCell2 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 xCell2 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
Ra Table 95 R_a3x 0 xCell3 R_a flag H2 0x0000 0xffff 0xffff
2 xCell3 R_a 0 I2 -32768 32767 160 m Ωat 0 °C
4 xCell3 R_a 1 I2 -32768 32767 166 m Ωat 0 °C
6 xCell3 R_a 2 I2 -32768 32767 153 m Ωat 0 °C
8 xCell3 R_a 3 I2 -32768 32767 151 m Ωat 0 °C
10 xCell3 R_a 4 I2 -32768 32767 145 m Ωat 0 °C
12 xCell3 R_a 5 I2 -32768 32767 152 m Ωat 0 °C
14 xCell3 R_a 6 I2 -32768 32767 176 m Ωat 0 °C
16 xCell3 R_a 7 I2 -32768 32767 204 m Ωat 0 °C
18 xCell3 R_a 8 I2 -32768 32767 222 m Ωat 0 °C
20 xCell3 R_a 9 I2 -32768 32767 254 m Ωat 0 °C
22 xCell3 R_a 10 I2 -32768 32767 315 m Ωat 0 °C
24 xCell3 R_a 11 I2 -32768 32767 437 m Ωat 0 °C
26 xCell3 R_a 12 I2 -32768 32767 651 m Ωat 0 °C
28 xCell3 R_a 13 I2 -32768 32767 1001 m Ωat 0 °C
30 xCell3 R_a 14 I2 -32768 32767 1458 m Ωat 0 °C
PF Status 96 Device Status 0 PF Flags 1 H2 0x0000 0xffff 0x0000Data
2 Fuse Flag H2 0x0000 0xffff 0x0000
4 PF Voltage U2 0 65535 0 mV
6 PF C4 Voltage U2 0 9999 0 mV
8 PF C3 Voltage U2 0 9999 0 mV
10 PF C2 Voltage U2 0 9999 0 mV
12 PF C1 Voltage U2 0 9999 0 mV
14 PF Current I2 -32768 32767 0 mA
16 PF Temperature U2 0 9999 0 0.1 °K
18 PF Batt Stat H2 0x0000 0xffff 0x0000
20 PF RC-mAh U2 0 65535 0 mAh
22 PF RC-10mWh U2 0 65535 0 10mWh
24 PF Chg Status H2 0x0000 0xffff 0x0000
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)Class Subclass Subclass Offset Name Data Min Value Max Value Default UnitsID Type Value
26 PF Safety Status H2 0x0000 0xffff 0x0000
28 PF Flags 2 H2 0x0000 0xffff 0x0000
PF Status 97 AFE Regs 0 AFE Status H1 0x00 0xffff 0x00
1 AFE Output H1 0x00 0xffff 0x00
2 AFE State H1 0x00 0xffff 0x00
3 AFE Function H1 0x00 0xffff 0x00
4 AFE Cell Select H1 0x00 0xffff 0x00
5 AFE OLV H1 0x00 0xffff 0x00
6 AFE OLT H1 0x00 0xffff 0x00
7 AFE SCC H1 0x00 0xffff 0x00
8 AFE SCD H1 0x00 0xffff 0x00
Calibration 104 Data 0 CC Gain F4 - 1.00E+128 0.471 num1.00E+128
4 CC Delta F4 - 1.00E+128 140500 num1.00E+128
8 Ref Voltage I2 0 32767 24500 50 µV
10 AFE Corr U2 0 65535 1288 num
12 AFE Pack Gain U2 0 65535 30625 num
14 CC Offset I2 -32768 32767 -12250 num
16 Board Offset I1 -128 127 0 num
17 Int Temp Offset I1 -128 127 0 num
18 Ext1 Temp Offset I1 -128 127 0 num
19 Ext2 Temp Offset I1 -128 127 0 num
Calibration 105 Config 0 CC Current U2 0 65535 3000 mA
2 Voltage Signal U2 0 65535 16800 mV
4 Temp Signal U2 0 65535 2980 0.1 °K
6 CC Offset Time U2 0 65535 250 ms
8 ADC Offset Time U2 0 65535 32 ms
10 CC Gain Time U2 0 65535 250 ms
12 Voltage Time U2 0 65535 1984 ms
14 Temperature Time U2 0 65535 32 ms
17 Cal Mode Timeout U2 0 65535 38400 sec/128
Calibration 106 Temp Model 0 Ext Coef 1 I2 -32768 32767 -28285 Sec
2 Ext Coef 2 I2 -32768 32767 20848 Sec
4 Ext Coef 3 I2 -32768 32767 -7537 Sec
6 Ext Coef 4 I2 -32768 32767 4012 Sec
8 Ext Min AD I2 -32768 32767 0 Sec
10 Ext Max Temp I2 -32768 32767 4012 Sec
12 Int Coef 1 I2 -32768 32767 0 Sec
14 Int Coef 2 I2 -32768 32767 0 Sec
16 Int Coef 3 I2 -32768 32767 -11136 Sec
18 Int Coef 4 I2 -32768 32767 5754 Sec
20 Int Min AD I2 -32768 32767 0 Sec
22 Int Max Temp I2 -32768 32767 5754 Sec
Calibration 107 Current 0 Filter U1 0 255 239 mA
1 Deadband U1 0 255 3 mA
2 CC Deadband U1 0 255 34 nV+
3 CC Max Deadband U1 0 255 5 nV+
4 CC Deadband Sample U2 0 65535 256 num
6 CC Max Offset Sample U2 0 65535 64 num
20
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Firmware Version Changes
bq20z80-V101 to bq20z80-V102 Changes
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 4. CHANGE DETAILS
CHANGE bq0z80-V102 bq20z80-V101 COMMENTS
Corrected to allow display to LED display operates correctly LED display would stay on until Correct operation of the LEDturn off when charging and during charging. charging terminated after the button display under all conditionsbutton pushed. was pushed. Only occurs when LEDdisplay not configured to be alwayson during charging.Allow negative LED Configuring negative LED alarm Feature not available Allow better customizationthresholds to permit LED threshold disables LED alarmalarms to be disabled functionality.Allow zero values for ALARM Configuring zero value for the Feature not available Allow better customizationand CHARGING LED blink LED blink rates disables them.rates to disable themRestore initialization of dodcharge initialized to the dodcharge value set to zero Improved gauging accuracy withdodcharge in relaxed state correct value correct initialization of dodchargeso that the correct dodcharge value.value is used in capacityestimation
Only clear offset calibration Prevents offset calibration Offset calibration occurs multiple More appropriate period betweenflag when SMBus lines go occurring just because a safety times if safety condition occurs offset calibrations when SMBushigh. condition occurs and then clears when SMBus lines are low. lines are low.when the SMBus lines are low.Change so that setting AFE Configurable option to allow Feature not available. Allow better customizationFail Limit to zero disables disabling PF_AFE_C triggerPF_AFE_C
Enable LED display to turn LED display turns off after charge LED display stays on when charging Correct operation of the LEDoff after charge termination termination. terminates after SMBus lines are display under all conditionsand if SMBus lines are detected low.detected low and LEDsenabled during charging.Set charge FET state Charge FET state set correctly, The CHG FET would not get set to Quicker transition of FET to theimmediately when entering immediately after entering sleep the correct state for sleep until the correct state in sleepsleep first voltage measurement.Change DF:Operation Cfg B Data flash default bases DF:Operation Cfg B [CCT = 1], Data flash default changed to[CCT = 0], so that SBS.CycleCount( ) calculation on making the default reflect common customer usageSBS.CycleCount( ) threshold mAh and not % of FCC SBS.CycleCount( ) calculation to beis in mAH, not in % of FCC based on % of FCCWhen DF:Operation Cfg B Use DF:CC Threshold as the Small or negative SBS.Full Charge Improved system reliability[CCT = 1], so that minimum to prevent rapid Capacity( ) values (should not occurSBS.CycleCount( ) threshold incrementing of the under normal operation) fromis % of FCC, then DF:CC SBS.Cyclecount( ), damaging the causing the SBS.CycleCount( )Threshold is used as a data flash incrementing rapidly, potentiallyminimum for the damaging the data flashSBS.CycleCount( ) thresholdWhen exiting the relaxed Corrected initial charge capacity If the relaxed state was exited to More reliablestate to sleep, the initial calculation to be accurate when sleep after a valid DOD SBS:FullChargeCapacity( )charge capacity is correctly exiting relaxed state to sleep measurement (30-minute default calculation under all systemcalculated value), then the initial charge conditionscapacity would not be recalculatedand would result in an incorrect FCCvalue if the sleep state was exitedbefore another valid DODmeasurement (30-minute defaultvalue)
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 4. CHANGE DETAILS (continued)
CHANGE bq0z80-V102 bq20z80-V101 COMMENTS
Correct update of Remcap in Charge or discharge current If the relaxed state was exited after More reliablerelaxed state to use passed accumulated in a relaxed state the accumulation of significant SBS:FullChargeCapacity( )charge used to update Remcap charge or discharge current (over at SBS:RemainingCapacity( )most 100 seconds with default calculation under all systemvalues), the RemCap and FCC conditionswould be in error by this charge.This is only significant if the relaxedstate can exist with significantcurrent as determined by applicationsettings.Implement disable of Prevent invalid soc values from Incorrect resistance updates that More reliable resistance updatesresistance update based on causing incorrect resistance could result from invalid soc values under all system conditionsaccumulative scale. If the updatesproduct of 15 consecutive(default value) resistancescale factors is less than 0.5or more than 1.5, thenresistance update is disableduntil the next valid socmeasurement. Sets bit 2 ofOperation Status to indicateresistance update disabled.Implement disable of Prevent invalid soc values from Incorrect resistance updates that More reliable resistance updatesresistance update based on causing incorrect resistance could result from invalid soc values under all system conditionsestimated capacity error. updatesSets bit 2 of Operation Statusto indicate resistance updatedisabled.
Disable Qmax increment if Prevent unnecessary Qmax Qmax increments can occur due to Improved Qmax data reliabilitydue to Grid 14 and exit of increments Grid 14 and exit of discharge under all system conditions.discharge
Drive all unused pins low Provides better ESD immunity Not all unused pins driven low Improved ESD immunityInitial charge capacity Overdischarged state does not An incorrect initial charge capacity More reliablecalculation when dod0 is affect the accuracy of FCC affects FCC that is calculated during SBS:FullChargeCapacity( )measured in the calculations discharge or a Qmax update. If FCC SBS:RemainingCapacity( )overdischarged state is is not changed by a Qmax update, calculation under all systemcorrected then reported RemainingCapacity conditionscould be negative after 5 hours ofrelaxationCorrect calculation of FCC Overcharged/Overdischarged The RemainingCapacity will More reliableand RemCap when dod0 is does not affect the accuracy of increment (or decrement) during SBS:FullChargeCapacity( )taken when the battery is FCC and RemCap calculations charging (discharging) even when SBS:RemainingCapacity( )overdischarged or the battery is in an overdischarged calculation under all systemovercharged. This allows (overcharged) state. conditionsRemCap to go negative, orgreater than FCC (though isonly reported from 0 - FCC).Change cell imbalance New feature providing improved Feature not available Improved customization for CellDF:Battery Rest Time from 1 customization Imbalance detectionbyte to 2 bytes and set thedefault value to 1800seconds
Use upper and lower limit for More reliable resistance updatesresistance accumulative under all system conditionsscale. Set default values to300% and 30%.Add DF:CF MaxError limit for New feature providing improved Feature not available Improved customizationsetting SBS.BatteryMode( ) customization[CONDITION FLAG]. Setdefault value to 100%.
22
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bq20z80 to bq20z80-V101 Changes
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 4. CHANGE DETAILS (continued)
CHANGE bq0z80-V102 bq20z80-V101 COMMENTS
Use SBS.AtRate( ), More reliableUserRate and C/5 rate for SBS:FullChargeCapacity( )relaxed capacity calculation, SBS:RemainingCapacity( )respectively, if set by Load calculation under all systemSelect; otherwise, use conditionsprevious rate.Correct Host Watchdog from Host Watchdog functionality not Host Watchdog reset by alarm or Reliable Host Watchdogbeing reset by broadcasts affected by alarm or charger charger broadcasts functionality under all systembroadcasts conditionsThe voltage table chemistry New feature providing more Feature not available Improved information accessID can be read by writing information0x0008 toManufacturerAccess andthen reading fromManufacturerAccess. Thedefault chemistry ID is0x0100
SBS.BatteryMode( ) is Customization allows for Feature not available Improved customizationinitialized on high transition preserving SBS.BatteryMode( )of the SMBus lines to DF:Init settings through SMBus lineBatteryMode, instead of transitionsalways clearingSBS.BatteryMode( ) definedbits on high transition of theSMBus lines.Broadcast timers are set Broadcast timer accurate Broadcast timer accuracy required a Improved broadcast timingcorrectly on high transition of regardless of CC offset CC offset calibration and entry to accuracy to meet Smart BatterySMBus lines. The timers are calibration or entry to sleep sleep. Data specset to 10 seconds on hightransition of SMBus lines.
CHANGE bq20z80 bq20z80-V101 COMMENTS
Added authentication (optional SBS Command 0x2f has no function and is Command 0x2f is the Additional feature to enable host tocommand 0x2f) not acknowledged. SBS.Authenticate( ) command to the authenticate the batterybq20z80 to begin the SHA1authentication.
Added Cell Balancing Cell balancing not available Added State of Charge cell balancing Additional feature to enable longeralgorithm lifetime of battery
Added charge fault FET Enable When charge faults occur, FET action When charge faults occur, FET action Adds flexibility to system interactionregister is taken. is taken if enabled in DF:FET Enableregister.
Added pulse compensation for end of Applications with pulsed current loads The voltage pulses caused by pulsed Added additional feature to improvedischarge and minimum voltage requirements current loads are measured and used capacity predictioncan have less RemainingCapacity to better estimate RemainingCapacity.than reported.
Added SBS.BatteryStatus( ) [TDA, SBS.BatteryStatus( ) [TDA, FD] are SBS.BatteryStatus( ) [TDA, FD] are Adds flexibility to system interactionFD] voltage thresholds only set on SBS.RSOC, detection of now set and cleared based oncharge termination or faults SBS.Voltage( )
Added option for LEDs in series with LED display is only in parallel. LED display is available in series Adds capability for higher brightnesscurrent source (with current source) or parallel. LEDs
Configured pin 7 as active high fuse Pin 7 is not connected. Pin 7 is now an active high reflection Adds flexibility to choose differentblow of SAFE (pin 12). circuits driven by the permanentfailure signal
Added State of Health calculation Command 0x4f has no function and is Command 0x4f is the Additional feature to allow host to(command 0x4f) not acknowledged. SBS.StateOfHealth( ) command easily determine health of the batterywhere SOH is the ratio ofSBS.DesignCapacity( ) toSBS.FullChargeCapacity( ).
Added Synchronization of SBS.RemainingCapacity( ) is not If DF:Operation Cfg [RMFCC] is set Adds option to enable chargeSBS.RemainingCapacity( ) to affected and could be < 100% at then SBS.RemainingCapacity( ) is synchronization in order to displaySBS.FullChargeCapcity( ) at charge charge termination. updated to the value of RelativeStateOfCharge as 100% attaper termination. SBS.FullChargeCapcity( ) at charge charge terminationtermination.
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
CHANGE bq20z80 bq20z80-V101 COMMENTS
Improved thermal model A preliminary thermal mode was An updated thermal model is used. Improved thermal compensation ofused. Impedance Track™ algorithm
Improved cell capacity measurement Valid voltage measurements for cell Valid voltage measurements for cell Improves capacity estimationby limiting valid temperature ranges capacity estimation can occur at any capacity estimation must occur withintemperature. a defined temperature range.
Improved cell capacity measurement After a full reset, it may take several Settling time of voltage Improves initial voltage readingminutes for voltage reading to settle measurements after a full reset is accuracyto the most accurate reading. reduced.
Improved default resistance tables A preliminary default resistance mode An updated default resistance mode Improved thermal accuracy ofwas used. is used. Impedance Track™ algorithm
Prevented lifetime updates until IT is Data flash lifetime data is updated Data flash lifetime data is not updated Improves suitability of lifetime dataenabled under all conditions. until Impedance Track™ is enabled.
Aligned SBS.RemainingCapacity( ) SBS.RemainingCapacity( ) could be Forces SBS.RemainingCapacity( ) to Improves alignment betweenwith DF:Terminate Voltage above zero when SBS.Voltage( ) zero when SBS.Voltage( ) is below reporting and system statusreaches DF:Terminate Voltage. terminate voltage
Disabled LEDs for undervoltage When SBS.OperationStatus( ) [CUV When SBS.OperationStatus( ) [CUV Reduces risk of deeply dischargingconditions or PUV] is set, then the LED display or PUV] is set, the LED display is the batterycould be activated. disabled.
Clear SBS.BatteryStatus( ) [RCA] SBS.BatteryStatus( ) [RCA] is not SBS.BatteryStatus( ) [RCA] is now Corrected to meet SBS specificationwhen not SBS.BatteryStatus( ) [DSG] cleared when SBS.BatteryStatus( ) cleared when SBS.BatteryStatus( )[DSG] is cleared. [DSG] is cleared.
Allowed sleep mode for undervoltage When SBS.OperationStatus( ) [CUV When SBS.OperationStatus( ) [CUV Reduces risk of deeply dischargingconditions or PUV] is set, then entry to sleep or PUV] is set, then entry to sleep the batterymode is disabled. mode is allowed.
Improvements made to Lifetime data Does not save maximum and Saves maximum and minimum Improves lifetime dataminimum lifetime AverageCurrent or lifetime AverageCurrent andAveragePower. Only saves lifetime AveragePower. Lifetime data is saveddata when new values exceed old after a defined period of time even ifvalues by defined delta values new values do not exceed old valuesby defined delta values
Changes made to pulse charging Voltages for pulse charging are Voltages for pulse charging are Improves pulse chargingsampled once a second. sampled 4 times a second.
Changes made to charging timeouts The precharge timeout timer runs The fast charge and precharge Improves operation of fast charge andwhen the charging current is below a timeout timers only run when precharge timeout timersdefined threshold; so, it is possible precharging or charging, as indicatedthat the precharge timer will run by FCHG and PCHG bits induring charging taper current and ChargingStatus.cause an undesired prechargetimeout during charging taper.
Changes made to discharge faults Discharging fault is indicated Discharging fault is indicated for any Improves indication of dischargingwhenever BatteryStatus [TDA] is set. safety condition resulting in turning off fault conditionsCurrent discharging fault is not the discharge FET. Currentindicated for current faults detect by discharging fault is indicated for allAFE. Separate discharging faults are detected overcurrent conditions,indicated for voltage and temperature. including overcurrent detected byAFE. Temperature and voltagedischarge faults are not indicatedseparately.
Improvements made to calibration Voltage calibration functions may Voltage calibration functions are Improved voltage calibration accuracyfunctions cause error in voltage calibration of capable of accuracy within 1 millivolt.several millivolts.
Protect against simultaneous writes to A SMBus-initiated data flash write A SMBus-initiated data flash write Increased robustness of data flashdata flash may occur at the same time as a data cannot occur at the same time as any writesflash write initiated by the AGG, which other data flash write.my cause a data flash write error.
Corrected SBS.ManufacturerAccess( ) access of SBS.ManufacturerAccess( ) access of Allows host to determine bq20z80SBS.ManufacturerAccess( ) access of silicon revision is not functional. silicon revision is functional. silicon revisionsilicon revision
Corrected data flash checksum The data flash checksum includes The data flash checksum only Data flash checksum operation worksoperation non-accessible portions of the data includes data flash that does not correctly.flash that change when writing the change when writing an updated datadata flash checksum, invalidating the flash checksum.checksum.
Corrections made to LED display Fixed LED thresholds cannot be Fixed LED thresholds can be Correct operation of LED thresholdselected. selected. settings
Erroneous readings are corrected that Erroneous SBS voltage, current, and No erroneous SBS voltage, current, Improve reliability of lifetime dataoccurred after offset calibration when temperature readings occur after and temperature readings occur aftersleep mode is not entered. current offset calibration if sleep mode current offset calibration if sleep modeis not entered, corrupting the lifetime is not entered.data.
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bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
CHANGE bq20z80 bq20z80-V101 COMMENTS
Corrected the length of SBS.ManufactureData( ) returned Only returns the appropriate data Correct data set made available toSBS.ManufacturerData( ) command additional data not specified in the hostdata sheet.
Changed DF:Charger Present default DF:Charger Present default was Default changed to 12000 mV. More realistic default for mostvoltage to 12000 mV 16800 mV. applications
Corrected LED display lock-up fault LED display locks up if LEDs are ON LED display operates normally Correct operation of the LED displaywhen exiting sleep with LEDs on as the bq20z80 exits sleep mode. regardless of power state transitions. under all conditions
Added report of any inability to write If writing the data flash is not allowed The inability to write data flash in Improved calibration systemDFF as flash write error in calibration either due to a permanent failure or calibration mode is reported as a flash interactionmode low voltage, then no indication is write error.given when attempting to write dataflash in calibration mode.
Corrected issue of improperly clearing AFE faults were detected and the AFE faults are correctly handled, Improved system interaction whenAFE faults pack protected but the fault would be including the flags. faults occurcleared up to three times at aninterval of 250 milliseconds before thedefined recovery requirements wouldapply.
Modified code to save open-circuit OCV data was saved after a full reset OCV tables are only updated when IT Improved OCV data reliability undervoltage (OCV) data on IT enable only, which could have disturbed the OCV enabled, or the IT enable command is all system conditionsnot a full reset measurements if the battery was not resent.in a completely relaxed state.
Corrected range check for calibration In calibration mode, if the In calibration mode, if the Improved calibration systemof analog-to-digital converter (ADC) measurement ADC offset was out of measurement ADC offset is out of interactionoffset range, no error would be reported. range, an error is reported.
Implemented a validation time for There is a possibility of erroneous DOD0 measurement is not saved More reliableDOD0 DOD0 measurement if charge or unless the battery remains in the SBS.FullChargeCapacity( ) anddischarge current occurs at the same relaxed state for a defined time after SBS.RemainingCapacity under alltime. the DOD0 measurement is made. system conditions
Implemented a bounds limit to a QMAX changes are not limited to QMAX changes are bounds limited to More reliableQMAX change filter-bad readings. filter-bad readings. SBS.FullChargeCapacity( ) andSBS.RemainingCapacity under allsystem conditions
Implemented a double hit for dv/dt The dv/dt qualification for QMAX The dv/dt qualification for QMAX More reliabledetection for QMAX qualification update requires only one sample to update requires two samples to be SBS.FullChargeCapacity( ) andbe valid. valid. SBS.RemainingCapacity( ) under allsystem conditions
Corrected parameter update issue If bq20z80 exits sleep during a SBS parameter updates operate Improved system interaction for sleepcaused by exiting sleep mode during current measurement, the SBS normally regardless of power state mode transitionscurrent measurement parameters do not update again until transitions.the pack enters and exits sleep modeagain.
Implemented an option to leave When DF:Operation Cfg B [NR] is set, When DF:Operation Cfg B [NR, Improved system interaction optionscharge FET on for a nonremovable then the CHG is turned off at entry to NRCHG] are set, then the CHGpack in sleep mode, enabled by sleep mode. remains on at entry to sleep mode.DF:Operation Cfg B [NRCHG].
Modified code such that if QMAX has Valid OCV is only discarded when all If QMAX has been updated, the same Enables QMAX measurement for fullnot been updated, old valid OCV conditions for QMAX update are conditions for discarding an OCV charge or discharge for the firstreadings are discarded when a new satisfied, but the accumulated error in reading are the same as for the QMAX update, even if initial OCVvalid OCV reading is detected and the the measured capacity exceeds 1% bq20z80. Otherwise, old OCV measurement is made when battery isconditions for QMAX update do not (default value). readings are discarded and new OCV only partially charged.exist. readings are used when theconditions for a valid OCV readingexist, but the conditions for QMAXupdate do not exist.
Modified code such that if QMAX has The measured capacity must be For the first QMAX, the measured Improved QMAX data reliability for thenot been updated, then for QMAX greater than 20% (default value) or a capacity must be greater than 90% first update of QMAXupdate to occur, the measured value as determined from the QMAX (default value) for a QMAX update tocapacity must be greater than or update filter constant for a QMAX occur. If QMAX update has occurredequal to 90% (default value) of design update to occur. the conditions for measured capacitycapacity. are the same as for the bq20z80.
Default minimum passed charge for Internal flash value of Min Passed Internal flash value of Min Passed Improved QMAX data reliability underQMAX update has been changed Charge is 20%. The default setting for Charge is 37%. This 37% is all system conditions.from 20% to 37% the QMAX update filter constant of 64 consistent with the QMAX updatemeans actual Min Passed Charge for filter constant of 96.QMAX update is 25%.
Default QMAX update filter constant Internal flash value of QMAX update Internal flash value of QMAX update Improved QMAX data reliability underhas been changed from 64 to 94. filter is 64. filter is 94. all system conditions.
QMAX values for nonexistent cells will DF:Qmax Cell 2..4 written with DF:Qmax Cell 2..4 are updated to = Ensure all QMAX values arebe updated to Design Capacity. random values if not used when DF:Design Capacity if not used when reasonable, even if not usedQMAX is updated QMAX is updated.
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PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
BQ20Z80DBT-V102 NRND TSSOP DBT 38 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ20Z80DBTR-V102 NRND TSSOP DBT 38 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ20Z80DBTR-V102G4 NRND TSSOP DBT 38 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ20ZDBT-V102G4 NRND TSSOP DBT 38 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ20ZDBTR-V102G4 NRND TSSOP DBT 38 TBD Call TI Call TI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
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Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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PACKAGE OPTION ADDENDUM
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