DMTH10H030LK3-13 - DIODES INC

DMTH10H030LK3

Document number: DS38737 Rev. 3 - 3

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DMTH10H030LK3

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

ID

TC = +25°C

100V

30mΩ @ VGS = 10V

28A

45mΩ @ VGS = 6.0V

23A

Description

This new generation MOSFET features low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Applications

 Power Management Functions

 DC-DC Converters

 Backlighting

Features

 Rated to +175°C – Ideal for High Ambient Temperature

Environments

 100% Unclamped Inductive Switching – Ensures More Reliable

and Robust End Application

 Low RDS(ON) – Minimizes Power Losses

 Low QG – Minimizes Switching Losses

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, ―Green‖ Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe

Solderable per MIL-STD-202, Method 208

 Weight: 0.33 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMTH10H030LK3-13

TO252 (DPAK)

2,500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Equivalent Circuit

Pin Out Top View

= Manufacturer’s Marking

TH130LK or TH115LK = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 17 = 2017)

WW = Week Code (01 to 53)

Top View

Green

YYWW

TH115LK

YYWW

TH130LK

NOT RECOMMENDED FOR NEW DESIGN

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DMTH10H030LK3

Document number: DS38737 Rev. 3 - 3

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DMTH10H030LK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V

TC = +25°C

TC = +100°C

ID

28

18

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

150

A

Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)

ISM

150

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

2.6

A

Avalanche Current, L = 3mH

IAS

7.5

A

Avalanche Energy, L = 3mH

EAS

85

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

2.1

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

69

°C/W

Total Power Dissipation (Note 6)

PD

3.5

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

42

°C/W

Thermal Resistance, Junction to Case

RθJC

2

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

1

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.4

—

3.5

V

VDS = VGS, ID = 250 A

Static Drain-Source On-Resistance

RDS(ON)

—

30

mΩ

VGS = 10V, ID = 20A

—

45

VGS = 6.0V, ID = 20A

Diode Forward Voltage

VSD

—

1.3

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1,871

—

pF

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

261

—

Reverse Transfer Capacitance

Crss

—

6.9

—

Gate Resistance

RG

—

0.75

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

QG

—

33.3

—

nC

VDD = 50V, ID = 10A,

VGS = 10V

Gate-Source Charge

QGS

—

6.9

—

Gate-Drain Charge

QGD

—

5.1

—

Turn-On Delay Time

tD(ON)

—

6.5

—

ns

VDD = 50V, VGS = 10V,

ID = 10A, RG = 6Ω

Turn-On Rise Time

tR

—

7.0

—

Turn-Off Delay Time

tD(OFF)

—

19.7

—

Turn-Off Fall Time

tF

—

8.1

—

Reverse Recovery Time

tRR

—

37.9

—

ns

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

51.9

—

nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

NOT RECOMMENDED FOR NEW DESIGN

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DMTH10H030LK3

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS = 3.0V

VGS = 3.5V

VGS = 4.0V

VGS = 4.5V

VGS = 5.0V

VGS = 6.0V

VGS = 10V

0

5

10

15

20

25

30

1 1.5 2 2.5 3 3.5 4 4.5 5

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS = 10V

-55oC

25oC

85oC

125oC

150oC

175oC

0.007

0.009

0.011

0.013

0.015

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

VGS = 10V

VGS = 6V

0

0.02

0.04

0.06

0.08

0.1

0 4 8 12 16 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID= 20A

0

0.005

0.01

0.015

0.02

0.025

0.03

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

ID, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

VGS = 10V

-55oC

25oC

85oC

125oC

150oC

175oC

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 025 50 75 100 125 150 175

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

VGS = 6V, ID= 20A

VGS = 10V, ID= 20A

NOT RECOMMENDED FOR NEW DESIGN

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DMTH10H030LK3

0

0.005

0.01

0.015

0.02

0.025

0.03

-50 -25 025 50 75 100 125 150 175

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

VGS = 6V, ID= 20A

VGS = 10V, ID= 20A

0

0.5

1

1.5

2

2.5

3

3.5

4

-50 -25 025 50 75 100 125 150 175

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

ID= 1mA

ID= 250µA

0

5

10

15

20

25

30

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

TJ= -55oC

TJ= 25oC

TJ= 85oC

TJ= 125oC

TJ= 150oC

VGS = 0V

TJ= 175oC

1

10

100

1000

10000

010 20 30 40 50

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f = 1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0 5 10 15 20 25 30 35

VGS (V)

Qg(nC)

Figure 11. Gate Charge

VDS = 50V, ID= 10A

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

TJ(Max) = 175℃

TC= 25℃

Single Pulse

DUT on Infinite

Heatsink

VGS = 10V

RDS(ON)

Limited

PW= 1s

PW= 100ms

PW= 10ms

PW= 1ms

PW= 100µs

RDS(ON)

Limited

PW= 1µs

PW=10µs

NOT RECOMMENDED FOR NEW DESIGN

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Document number: DS38737 Rev. 3 - 3

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0.001

0.01

0.1

1

1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13. Transient Thermal Resistance

RθJC(t) = r(t) * RθJC

RθJC = 2℃/W

Duty Cycle, D = t1/t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5 D=0.7

D=0.9

NOT RECOMMENDED FOR NEW DESIGN

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Document number: DS38737 Rev. 3 - 3

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

Dim

Min

Max

Typ

A

2.19

2.39

2.29

A1

0.00

0.13

0.08

A2

0.97

1.17

1.07

b

0.64

0.88

0.783

b2

0.76

1.14

0.95

b3

5.21

5.46

5.33

c

0.45

0.58

0.531

D

6.00

6.20

6.10

D1

5.21

-

e

-

2.286

E

6.45

6.70

6.58

E1

4.32

-

H

9.40

10.41

9.91

L

1.40

1.78

1.59

L3

0.88

1.27

1.08

L4

0.64

1.02

0.83

a

0°

10°

-

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

Dimensions

Value (in mm)

C

4.572

X

1.060

X1

5.632

Y

2.600

Y1

5.700

Y2

10.700

b3

E

L3

D

L4

b2(2x)

b(3x)

e

c

A

7°± 1°

H

Seating Plane

A1

Gauge Plane

a

0.508

L

2.74REF

D1

A2

E1

X1

X

Y2

Y1

Y

C

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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NOT RECOMMENDED FOR NEW DESIGN

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