NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 Green DMTH10H030LK3 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Max ID TC = +25C 30m @ VGS = 10V 28A 45m @ VGS = 6.0V 23A 100V Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Power Management Functions DC-DC Converters Backlighting Top View Environments 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application Low RDS(ON) - Minimizes Power Losses Low QG - Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Rated to +175C - Ideal for High Ambient Temperature Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMTH10H030LK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information TH130LK YYWW DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 TH115LK YYWW = Manufacturer's Marking TH130LK or TH115LK = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 1 of 7 www.diodes.com June 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 DMTH10H030LK3 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage TC = +25C TC = +100C Continuous Drain Current, VGS = 10V Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 3mH VDSS Value 100 Unit V VGSS 20 V ID 28 18 A IDM ISM 150 150 A A IS 2.6 7.5 A A 85 mJ Value 2.1 69 Unit W C/W W IAS EAS Avalanche Energy, L = 3mH Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol PD Steady State RJA PD RJA 3.5 Steady State RJC 2 TJ, TSTG -55 to +175 Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range 42 C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD -- -- -- -- 3.5 30 45 1.3 V Static Drain-Source On-Resistance 1.4 -- -- -- VDS = VGS, ID = 250 A VGS = 10V, ID = 20A VGS = 6.0V, ID = 20A VGS = 0V, IS = 20A Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- 1,871 261 6.9 0.75 33.3 6.9 5.1 6.5 7.0 19.7 8.1 37.9 51.9 -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: m V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 10A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 10A, RG = 6 ns nC IF = 10A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 2 of 7 www.diodes.com June 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 30.0 30 VDS = 10V VGS = 4.5V 25 25.0 VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DMTH10H030LK3 20.0 VGS = 5.0V 15.0 VGS = 6.0V VGS = 10V 10.0 VGS = 3.5V 20 15 10 150oC 5 5.0 -55oC 0 0.0 0 0.5 1 1.5 2 2.5 1 3 2 2.5 3 3.5 4 4.5 5 Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.015 0.013 VGS = 6V 0.011 VGS = 10V 0.009 0.007 0 1.5 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25oC 125oC VGS = 3.0V 0.1 0.08 0.06 0.04 ID = 20A 0.02 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 85oC 175oC VGS = 10V 175oC 0.025 150oC 0.02 125oC 0.015 85oC 0.01 25oC 0.005 -55oC 2.2 2 VGS = 10V, ID = 20A 1.8 1.6 1.4 1.2 VGS = 6V, ID = 20A 1 0.8 0.6 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature June 2017 (c) Diodes Incorporated DMTH10H030LK3 4 0.03 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 0.025 VGS = 6V, ID = 20A 0.02 0.015 0.01 VGS = 10V, ID = 20A 0.005 3.5 3 2.5 ID = 1mA 2 1.5 ID = 250A 1 0.5 0 0 -50 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature -25 0 25 75 100 125 150 175 10000 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) 50 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 20 15 TJ = 175oC 10 TJ = 85oC TJ = 150oC 5 TJ = TJ = 125oC 25oC Ciss 1000 Coss 100 Crss 10 TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 RDS(ON) Limited 8 PW = 1s 100 ID, DRAIN CURRENT (A) VGS (V) 50 6 4 VDS = 50V, ID = 10A 2 10 PW = 1s PW = 100ms 1 0.1 0 0.01 0 5 10 15 20 25 Qg (nC) Figure 11. Gate Charge DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 30 35 4 of 7 www.diodes.com PW = 10ms TJ(Max) = 175 TC = 25 Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 PW = 1ms PW = 100s PW =10s 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 June 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 DMTH10H030LK3 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 RJC(t) = r(t) * RJC RJC = 2/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 5 of 7 www.diodes.com June 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 DMTH10H030LK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7 1 c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0 10 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 6 of 7 www.diodes.com June 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMTH10H025LK3 DMTH10H030LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com DMTH10H030LK3 Document number: DS38737 Rev. 3 - 3 7 of 7 www.diodes.com June 2017 (c) Diodes Incorporated