6MBI450U-170 IGBT Module U-Series 1700V / 450A 6 in one-package Features Applications * High speed switching * Voltage drive * Low inductance module structure * Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Conditions Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C -IC -IC pulse PC Tj Tstg V iso Unit V V A Rating 1700 20 600 450 1200 900 450 900 2080 +150 -40 to +125 3400 W C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) *4 :Recommendable value : 3.5 to 4.5 N*m(M6) VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbols Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Reverse recovery time Lead resistance, terminal-chip*5 Resistance ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R B value B *5:Biggest internal terminal resistance among arm. Conditions VGE=0V, VCE=1700V VCE=0V, VGE=20V VCE=20V, IC=450mA VGE=15V, IC=450A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=450A VGE=15V RG=1.1 VGE=0V IF=450A Tj=25C Tj=125C Tj=25C Tj=125C IF=450A T=25C T=100C T=25/50C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.50 - 2.85 - 2.05 - 2.40 - 45 - 0.58 - 0.32 - 0.10 - 0.80 - 0.15 - 2.25 - 2.45 - 1.80 - 2.00 - 0.3 - 1.0 - 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 3.00 - 2.55 - - 1.20 0.60 - 1.50 0.30 3.00 - 2.55 - 0.6 - - 520 3450 mA nA V V nF s V s m Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*6 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0167 *6 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit Max. 0.06 0.10 - C/W C/W C/W IGBT Module 6MBI450U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 1200 1200 1000 VGE=20V 15V Collector current : Ic [A] Collector current : Ic [A] 1000 800 12V 600 400 VGE=20V 15V 800 12V 600 400 10V 10V 200 200 9V 9V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 Collector current vs. Collector-Emitter voltage (typ.) 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 1200 Collector - Emitter voltage : VCE [ V ] 10 1000 Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] T j=25C 800 T j=125C 600 400 200 0 8 6 4 Ic=900A Ic=450A Ic=225A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25C Vcc=900V, Ic=450A, Tj= 25C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 1000.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 500 1000 1500 Gate charge : Qg [ nC ] http://store.iiic.cc/ 2000 2500 IGBT Module 6MBI450U-170 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=1.1, Tj= 25C Vcc=900V, VGE=15V, Rg=1.1, Tj=125C 10000 toff 1000 ton tr tf 100 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 10 10 0 200 400 600 0 800 200 Collector current : Ic [ A ] 600 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=900V, Ic=450A, VGE=15V, Tj= 25C Vcc=900V, VGE=15V, Rg=1.1 10000 800 250 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 400 Collector current : Ic [ A ] toff ton tr tf 100 Eoff(125C) 200 Eoff(25C) 150 Eon(125C) Err(125C) 100 Err(25C) Eon(25C) 50 10 0 0.1 1.0 10.0 0 200 400 600 800 1000 Collector current : Ic [ A ] Gate resistance : Rg [ ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=900V, Ic=450A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 1.1 ,Tj <= 125C Stray inductance <= 100nH 1200 Eon 250 200 Eoff 150 100 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 900 600 300 50 Err 0 0 0.1 1.0 10.0 Gate resistance : Rg [ ] 0 300 600 900 1200 1500 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1800 6MBI450U-170 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=900V, VGE=15V, Rg=1.1 1200 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 1000 T j=25C 800 T j=125C 600 400 200 Irr (125C) Irr (25C) trr (125C) trr (25C) 100 10 0 0 1 2 3 0 4 200 Forward on voltage : VF [ V ] Transient thermal resistance (max.) 600 800 1000 Temperature characteristic (typ.) 1.000 100 FWD Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] 400 Forward current : IF [ A ] 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 1.000 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] T emperature [C ] http://store.iiic.cc/ IGBT Module 6MBI450U-170 Outline Drawings, mm M629 Equivalent Circuit Schematic [Inverter] 4 2 11 9 12 10 1 [Thermister] 6 7 8 3 http://store.iiic.cc/ 5