For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
1
HMC462LP5 / 462LP5E
v05.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
General Description
Features
Functional Diagram
The HMC462LP5 & HMC462LP5E are GaAs MMIC
pHEMT Low Noise Distributed Ampliers in leadless
5x5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplier
provides 13 dB of gain, 2.5 to 3.5 dB noise gure and
+14.5 dBm of output power at 1 dB gain compression
while requiring only 66 mA from a single +5V supply.
Gain atness is excellent from 6 - 18 GHz making
the HMC462LP5 & HMC462LP5E ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplier I/Os are internally matched to 50
Ohms and are internally DC blocked.
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5V @ 66mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
Typical Applications
The HMC462LP5 / HMC462LP5E Wideband LNA is
ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C3I
• Test Instrumentation
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd= 5V
Parameter Min. Ty p . Max. Min. Ty p . Max. Min. Ty p . Max. Units
Frequency Range 2 - 6 6 - 14 14 - 20 GHz
Gain 12 14 11 13 10 12 dB
Gain Flatness ±0.5 ±0.5 ±0.5 dB
Gain Variation Over Temperature 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C
Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB
Input Return Loss 15 13 11 dB
Output Return Loss 12 12 8 dB
Output Power for 1 dB Compression (P1dB) 12 15 11 14 912 dBm
Saturated Output Power (Psat) 17 16 15 dBm
Output Third Order Intercept (IP3) 26 25 22 dBm
Supply Current
(Idd) (Vdd= 5V) 41 66 84 41 66 84 41 66 84 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
2
HMC462LP5 / 462LP5E
v05.0213
GAAS PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Noise Figure vs. Temperature
Gain vs. Temperature
Output Return Loss vs. Temperature
Gain & Return Loss
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 2 4 6 8 10 12 14 16 18 20 22
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
3
HMC462LP5 / 462LP5E
v05.0213
GAAS PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +9 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C) 3.25 W
Thermal Resistance
(channel to ground paddle) 52 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (V) Idd (mA)
+4.5 66
+5.0 67
+5.5 68
+7.5 71
+8.0 72
+8.5 73
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5
8
11
14
17
20
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
5
8
11
14
17
20
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
15
18
21
24
27
30
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
50
52
54
56
58
60
62
64
66
68
70
72
4.5 5 5.5
Gain P1dB Noise Figure
Idd
GAIN (dB), P1dB (dBm), Noise Figure (dB)
Idd (mA)
Vdd (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
4
HMC462LP5 / 462LP5E
v05.0213
GAAS PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC462LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H462
XXXX
HMC462LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H462
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PAT TERN.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
5
HMC462LP5 / 462LP5E
v05.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Pin Number Function Description Interface Schematic
1 - 4, 6 - 20,
22 - 29, 31, 32 N/C No connection. These pins may be connected to RF ground.
Performance will not be affected.
5 RFIN This pad is AC coupled
and matched to 50 Ohms.
21 RFOUT This pad is AC coupled
and matched to 50 Ohms.
30 Vdd Power supply voltage for the amplier.
External bypass capacitors are required.
Ground Paddle GND Ground paddle must be connected to RF/DC ground.
Pin Descriptions
HMC462LP5 / 462LP5E
v05.0213
GAAS PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
6
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and package bottom should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108338 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm Molex Header
C1 100 pF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 4.7 µF Capacitor, Tantalum
U1 HMC462LP5 / HMC462LP5E
PCB [2] 109751 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350