HSCH-9161
Zero Bias Beamlead Detector Diode
Data Sheet
Description
Avago’s HSCH-9161 is a GaAs beamlead detector
diode, fabricated using the modified barrier integrated
diode (MBID) process
[1]
. This diode is designed for zero
bias detecting applications at frequencies through
110 GHz. It can be mounted in ceramic microstrip
(MIC), finline and coplanar waveguide circuits.
Features
•Low junction capacitance
•Lower temperature coefficient than silicon
•Durable construction —
typical 6 gram beamlead strength
•Operation to 110 GHz
Note 1:
The diode structure and process are covered by U.S. Patent No. 4,839,709
issued to Mark Zurakowski on June 13, 1989, and assigned to Avago.
ALL DIMENSIONS IN MICRONS.
231
(9.1)
250
(9.8)
250
(9.8)
120
(4.7)
231
(9.1)
Applications
At room temperature and frequencies under 10 GHz,
the silicon zero bias Schottky detectors HSMS-0005 and
HSMS-2850 offer comparable performance. However,
the HSCH-9161 yields virtually flat detection sensitiv-
ity from 10 to 30 GHz with good performance from 30
to 110 GHz. In a wideband matched detector, in which
a shunt 50 Ω resistor is used in front of the diode, volt-
age sensitivity (γ) is calculated to be 1 mV/µW. Where
a high-Q reactive impedance matching network is sub-
stituted for the shunt 50Ω resistor, values of γ approach-
ing 25 mV/µW can be expected.
In applications below 10 GHz where DC bias is not avail-
able and where temperature sensitivity is a design con-
sideration, the HSCH-9161 offers superior stability
when compared to silicon zero bias Schottky diodes.
Bonding and Handling
For more detailed information, see Avago Applica-
tion Note 999, “GaAs MMIC Assembly and Handling
Guidelines.”
Assembly Techniques
Thermocompression bonding is recommended. Weld-
ing or conductive epoxy may also be used. For addi-
tional information see Application Note 979, “The
Handling and Bonding of Beam Lead Devices Made
Easy,” or Application Note 992, ”Beam Lead Attach-
ment Methods,” or Application Note 993, “Beam Lead
Device Bonding to Soft Substrates.”
Small Signal Linear Model
0.011 pF
50 Ω
0.3 nH 0.035 pF
R
j
R
v
=
R
j +
R
s
HSCH-9161 Typical Performance
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage.
FORWARD CURRENT (mA)
0 0.2 0.4 0.6 1.0
0.8
16
14
12
10
8
6
4
2
0
TEMPERATURE (°C)
Figure 2. Typical Variation of Video
Resistance vs. Temperature.
VIDEO RESISTANCE (KΩ)
0102030 80
40 6050 70
Maximum
Typical
50 Ω
HSCH-9161 Absolute Maximum Ratings, TA = 25°C
Symbol Parameters/Conditions Units Min. Typ. Max.
Top Operating Temp. Range °C–65 175
Tstg Storage Temp. Range °C–65 200
PBBurnout Power dBm 20
DC Specifications/Physical Properties, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
CjJunction Capacitance pF .035
Test Conditions: f = 1 GHz
RVVideo Resistance kΩ2.5 7.5
Test Conditions: Zero Bias
γVoltage Sensitivity mV/µW 0.5
Test Conditions: Zero Bias, 10 GHz,
shunt 50 Ω input matching resistor
—Beamlead Strength grams 3
SPICE Parameters
Because of the high leakage of this
diode under reverse bias, it must
be modelled as an anti-parallel
pair.
D1
HSCH-9161
D2
D1 represents the characteristic of
the HSCH-9161 under forward
bias and D2 (in the forward
direction) gives the V-I curve of
the HSCH-9161 under reverse bias.
Parameter Units D1 D2
BVV10 10
CJO pF 0.030 0.030
EGeV 1.42 1.42
IBV A 10E-12 10E-12
ISA 12 x 10E-6 84 x 10E-6
N 1.2 40.0
RSΩ50 10
PB (VJ) V 0.26 0.26
PT (XTI) 2 2
M 0.5 0.5
1.0
0.8
0.6
0.4
0.2
0
TEMPERATURE (°C)
Figure 3. Calculated Variation of Voltage
Sensitivity vs. Temperature.
GAMMA (mV/µW)
0102030 80
40 6050 70
50 Ω100 K
Frequency = 10 GHz
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte.
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
Obsoletes 5988-5907EN
5988-6209EN March31, 2006
