1C4D20120D Rev. D
C4D20120D
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 1.2-KVoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
Package
TO-247-3
Maximum Ratings
(TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1300 V
V
DC
DCBlockingVoltage 1200 V
IF
ContinuousForwardCurrent
(PerLeg/Device)
34/68
16.5/33
10/20
A
TC=25˚C
TC=135˚C
TC=157˚C
IFRM RepetitivePeakForwardSurgeCurrent 47
*
31.5
*
ATC=25˚C,tP=10ms,HalfSinePulse
TC-110˚C,tP=10ms,HalfSinePulse
IFSM
Non-RepetitivePeakForwardSurge
Current
71
*
59.5
*
ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 750*
620* ATC=25˚C,tP=10 ms,Pulse
TC=110˚C,tP=10 ms,Pulse
P
tot
PowerDissipation(PerLeg/Device) 176/352
76/152 WTC=25˚C
TC=110˚C
T
J
OperatingJunctionRange -55 to
+175 ˚C
T
stg
StorageTemperatureRange -55 to
+135 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
*PerLeg,**PerDevice
Part Number Package Marking
C4D20120D TO-247-3 C4D20120
VRRM = 1200 V
IF (TC=135˚C) =33A**
Qc  =104nC**
2C4D20120D Rev. D
Figure1.ForwardCharacteristics
0
2
4
6
8
10
12
14
16
18
20
00.5 11.5 22.5 33.5
I
F
Forward Current
V
F
Forward Voltage
Figure2.ReverseCharacteristics
0
0.0001
0.0002
0.0003
0.0004
0.0005
0.0006
0.0007
0500 1000 1500 2000
I
R
Reverse Current (A)
VRReverse Voltage
V
F
Forward Voltage (V
)
IF Forward Current (A)
20
18
16
14
12
10
8
6
4
2
0
0 0.511.522.533.5
V
R
Reverse Voltage (V
)
IR Reverse Current (μA)
700
600
500
400
300
200
100
0
0 500 1000 1500 2000
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.2
1.8
3VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IRReverseCurrent 30
55
250
350 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QCTotalCapacitiveCharge 52 nC
VR=800V,IF = 10A
di/dt=200A/μs
TJ=25°C
C TotalCapacitance
754
45
38
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC
ThermalResistancefromJunction
toCase
0.85*
0.43** °C/W
*PerLeg,**PerDevice
Typical Performance (Per Leg)
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
IF (A)
VF (V)
IR (μA)
VR (V)
3C4D20120D Rev. D
60
80
100
120
Peak Forward Current (A)
0
20
40
100
125
150
175
IF(PEAK)
Peak Forward Current (A)
Tc Case Temperature (°
°°
°C)
Figure3.CurrentDerating Figure4.PowerDerating
Typical Performance (Per Leg)
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
IF(peak) (A)
TC ˚C
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
160.0
180.0
200.0
25 50 75 100 125 150 175
PTot (W)
TC ˚C
0
10
20
30
40
50
60
70
0200 400 600 800 1000
Qrr (nC)
VR (V)
0
100
200
300
400
500
600
700
800
0.1 110 100 1000
C (pF)
VR (V)
4C4D20120D Rev. D
10.0
15.0
20.0
25.0
Capacitive Energy (uJ)
0.0
5.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy,perleg Figure8.Non-RepetitivePeakForwardSurgeCurrent
versusPulseDuration(sinusoidalwaveform),perleg
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
25
20
15
10
5
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.DeviceTransientThermalImpedance
10E
-
3
100E-3
Junction To Case Impedance, Z
thJC (oC/W)
0.5
0.3
0.1
0.05
SinglePulse
1E-3
10E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
Time, tp(s)
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C4D20120D Rev. D
Part Number Package Marking
C4D20120D TO-247-3 C4D20120
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
T U
WV
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C4D20120D Rev. D
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT= VT+If*RT
VT =0.98+(TJ*-1.71*10-3)
RT =0.040+(TJ*5.32*10-4)