PSKD 250 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet = 2x 450 A = 2x 290 A = 800-1600 V 3 2 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 3 1 Test Conditions TVJ = TVJM TC = 100C; 180 sine IFSM TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine Maximum Ratings 450 A 290 A TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Weight Mounting torque (M5) Terminal connection torque (M8) Typical including screws Symbol IRRM Test Conditions TVJ = TVJM; VR = VRRM VF IF = 600 A; TVJ = 25C VT0 rT For power-loss calculations only TVJ = TVJM RthJC per per per per RthJK 1 PSKD 250/08 PSKD 250/12 PSKD 250/14 PSKD 250/16 Symbol IFRMS IFAVM i2dt 2 diode; DC current module diode; DC current module 11 000 11 700 9000 9600 605 560 405 380 A A A A 000 000 000 000 A 2s A2s A 2s A2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Characteristic Values 40 mA other values see Fig. 6/7 1.3 V 0.75 0.75 V m 0.129 0.065 0.169 0.0845 K/W K/W K/W K/W QS IRM TVJ = 125C, IF = 400 A; -di/dt = 50 A/s 760 275 C A dS dA a Creepage distance on surface Strike distance through air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s 2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 2 i2dt versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B2 2 x PSKD 250 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKD 250 0.15 Fig. 6 Transient thermal impedance junction to case (per diode) 30 DC K/W ZthJC RthJC for various conduction angles d: d 0.10 DC 180 120 60 30 0.05 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 30 DC 0.0035 0.0165 0.1091 0.0099 0.168 0.456 RthJK for various conduction angles d: 0.15 d DC 180 120 60 30 0.10 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 ti (s) Fig. 7 Transient thermal impedance junction to heatsink (per diode) K/W ZthJK 1 2 3 Rthi (K/W) 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.04 0.0099 0.168 0.456 1.36 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/