To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. CR04AM-12 Thyristor Low Power Use REJ03G0354-0200 Rev.2.00 Mar.01.2005 Features * Glass Passivation Type * IT (AV) : 0.4 A * VDRM : 600 V * IGT : 100 A Outline PRSS0003EA-A (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V CR04AM-12 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.63 0.4 Unit A A ITSM 10 A I2t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 0.23 W W V V A C C g Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180 conduction, Ta = 54C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. -- -- Typ. -- -- Max. 0.5 0.5 Unit mA mA On-state voltage VTM -- -- 1.2 V Ta = 25C, ITM = 1.2 A, instantaneous value Gate trigger voltage VGT -- -- 0.8 V Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 -- -- V Tj = 125C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 1 -- 100Note2 A Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Holding current IH -- 1.5 3 mA Rth (j-a) -- -- 150 C/W Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient Thermal resistance Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k Switch 2 60 TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev.2.00, Mar.01.2005, page 2 of 7 CR04AM-12 Performance Curves 102 7 5 3 2 10 Surge On-State Current (A) Ta = 25C 101 7 5 3 2 100 7 5 3 2 1 2 3 4 5 Gate Voltage (V) PGM = 0.5W 7 5 V GT = 0.8V 3 (Tj = 25C) 2 100 7 5 3 2 PG(AV) = 0.1W IGT = 100A (Tj = 25C) IFGM = 0.3V VGD = 0.2V 10-2 10-2 2 3 5710-12 3 57100 2 3 57101 2 3 57102 2 3 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Gate Trigger Voltage (V) 4 Gate Current (mA) 1.0 Distribution 0.8 Typical Example 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) Rev.2.00, 5 Gate Trigger Current vs. Junction Temperature VFGM = 6V 7 5 3 2 6 Gate Characteristics 101 10-1 7 Conduction Time (Cycles at 60Hz) 102 7 5 3 2 8 On-State Voltage (V) x 100 (%) 0 9 0 100 Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 10-1 Rated Surge On-State Current Mar.01.2005, page 3 of 7 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Time (s) CR04AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 120 Resistive, inductive loads Natural convection 100 80 60 = 30 40 90 180 60 120 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 = 30 90 60 120 180 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 Resistive loads 0 140 120 360 Resistive loads Natural convection 100 80 60 40 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 60 90 120 0 180 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.8 160 90 180 = 30 60 120 270 DC 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Mar.01.2005, page 4 of 7 Ambient Temperature (C) Average Power Dissipation (W) 360 Average On-State Current (A) 0 Rev.2.00, 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.8 Average Power Dissipation (W) Ambient Temperature (C) 160 60 120 = 30 90 180 Ambient Temperature (C) Average Power Dissipation (W) 0.8 140 120 360 Resistive, inductive loads Natural convection 100 80 60 40 20 0 = 30 0 60 120 270 90 180 DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Typical Example 140 120 100 80 60 40 20 RGK = 1k 0 -40 -20 0 20 40 60 80 100 120 140 160 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example 100 80 60 40 20 Tj = 125C 0 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction Temperature (C) Gate to Cathode Resistance (k) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example Holding Current (mA) 140 Tj = 125C RGK = 1k 120 100 80 60 40 20 101 7 5 3 2 Distribution Typical Example IGT(25C) = 35A 100 7 5 3 2 10-1 7 5 3 2 RGK = 1k 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Holding Current vs. Gate Trigger Current 500 Typical Example IGT(25C) IH(1k) 0.9mA # 1 25A 400 300 200 #1 100 4.0 Tj = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Tj = 25C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (k) Rev.2.00, Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) 160 Holding Current (mA) Holding Current (RGK = rk) Holding Current (RGK = 1k) x 100 (%) Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) x 100 (%) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) x 100 (%) Breakover Voltage vs. Junction Temperature x 100 (%) CR04AM-12 Mar.01.2005, page 5 of 7 0 100 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current (A) CR04AM-12 102 7 Typical Example 5 3 2 VD = 100V RL = 47 RGK = 1k Ta = 25C 101 7 5 3 2 100 7 5 3 2 Turn-Off Time vs. Junction Temperature 40 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1k Turn-Off Time (s) Turn-On Time (s) Turn-On Time vs. Gate Current Distribution 20 15 10 0 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) Gate Current (mA) 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Mar.01.2005, page 6 of 7 Gate Trigger Current (tw) Gate Trigger Current (DC) x 100 (%) Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Typical Example 25 5 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Rev.2.00, 30 104 7 5 3 2 103 7 5 3 2 Typical Example IGT(DC) # 1 10A # 2 65A #1 #2 102 7 5 3 2 Tj = 25C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) CR04AM-12 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003EA-A Package Name MASS[Typ.] TO-92 Unit: mm 0.23g 5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle 0.7 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name - Lead forming code Form A8 Taping 2000 Type name - TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 Standard order code example CR04AM-12 CR04AM-12-A6 CR04AM-12-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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