VS-VSK.230..PbF Series
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Revision: 26-Jul-2018 1Document Number: 93053
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SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor and thyristor/diode in seven basic
configurations. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
compact assemblies to be built. They can be interconnected
to form single phase or three phase bridges or as
AC-switches when modules are connected in anti-parallel
mode. These modules are intended for general purpose
applications such as battery chargers, welders, motor
drives, UPS, etc.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 230 A
Type Modules - thyristor, standard
Package MAGN-A-PAK
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) 85 °C 230
A
IT(RMS) 510
ITSM
50 Hz 7500
60 Hz 7850
I2t50 Hz 280 kA2s
60 Hz 260
I2t280 kA2s
VDRM/VRRM 800 to 2000 V
TJRange -40 to +130 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VS-VSK.230-
08 800 900
50
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
VS-VSK.230..PbF Series
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave 230 A
85 °C
Maximum RMS on-state current IT(RMS) As AC switch 510
A
Maximum peak, one-cycle on-state
non-repetitive, surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = TJ maximum
7500
t = 8.3 ms 7850
t = 10 ms 100 % VRRM
reapplied
6300
t = 8.3 ms 6600
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
280
kA2s
t = 8.3 ms 256
t = 10 ms 100 % VRRM
reapplied
198
t = 8.3 ms 181
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2800 kA2s
Low level value or threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.03 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.07
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.77 m
High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage drop VTM ITM = x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.59 V
Maximum holding current IHAnode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
mA
Maximum latching current ILAnode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time tdTJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs,
Vd = 0.67 % VDRM
1.0
μs
Typical rise time tr2.0
Typical turn-off time tqITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 50 to 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum 50 mA
RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10.0 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0
Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 A
Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0
V
Maximum required DC gate voltage to trigger VGT
TJ = -40 °C Anode supply = 12 V,
resistive load; Ra = 1
4.0
TJ = 25 °C 3.0
TJ = TJ maximum 2.0
Maximum required DC gate current to trigger IGT
TJ = - 40 °C Anode supply = 12 V,
resistive load; Ra = 1
350
mATJ = 25 °C 200
TJ = TJ maximum 100
Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V
Maximum gate current that will not trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/μs
VS-VSK.230..PbF Series
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range TJ-40 to +130 °C
Storage temperature range TStg -40 to +150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.125
K/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth, and greased 0.02
Mounting
torque ± 10 %
MAGN-A-PAK to heatsink A mounting compound is recommended and
the torque should be rechecked after a period
of about 3 h to allow for the spread of the
compound.
4 to 6 Nm
busbar to MAGN-A-PAK
Approximate weight 500 g
17.8 oz.
Case style MAGN-A-PAK
R CONDUCTION PER JUNCTION
DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
200 240160
120
90
100
110
120
130
80
60
70
80
400
Ø
Conduction Angle
30°
60°
90°
120°
VSK.230..Series
RthJC (DC) = 0.125 K/W
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
250 300 350 400200150
90
100
110
120
130
100
60
70
80
500
VSK.230..Series
RthJC (DC) = 0.125 K/W
Conduction Period
Ø
30°
DC
60°
90°
120° 180°
VS-VSK.230..PbF Series
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Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Power Loss Characteristics
Maximum Average On-State
Power Loss (W)
Average On-state Current (A)
250200
150
150
200
250
300
350
100
0
50
100
500
Ø
Conduction Angle
VSK.230..Series
Per Junction
TJ = 130 °C
180°
120°
90°
60°
30°
RMS limit
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
250200
150 400350
300
150
200
250
300
350
100
0
50
100
50
0
VSK.230..Series
Per Junction
TJ = 130 °C
180°
120°
90°
60°
30°
RMS limit
Conduction Period
Ø
DC
Peak Half Sine Wave On-State Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
7000
6500
6000
5500
5000
4500
4000
3500
3000
1 10 100
VSK.230..Series
Per Junction
At any rated load condition and with
rated VRRM applied following surge
Initial TJ = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Pulse Train Duration (s)
Peak Half Sine Wave On-State Current (A)
7000
7500
6500
6000
5500
5000
4500
4000
3500
3000
0.01 0.1 1
VSK.230..Series
Per Junction
Maximum non repetitive surge current
vs. pulse drain duration.Control of
conduction may not be maintained.
No voltage reapplied
Rated VRRM applied
Initial TJ = 130 °C
Total RMS Output Current (A)
Maximum Total On-State Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
700
600
500
400
300
200
100
200 300 400 500 20 40 60 80 100 120100
0
0
VSK.230..Series
Per Module
TJ = 130 °C
180°
120°
90°
60°
30°
0.03 K/W
0.06 K/W
0.12 K/W
0.16 K/W
0.2 K/W
0.1 K/W
0.08 K/W
0.25 K/W
R
thSA
= 0.01 K/W - ΔR
0.3 K/W
Conduction Angle
Ø
Ø
VS-VSK.230..PbF Series
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Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics
Maximum Total Power Loss (W)
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)
20 40 60 80 100 120
1050
900
750
1500
1350
1200
600
450
300
150
0
250 300 350 400 450200150100500
2 x VSK.230..Series
Single phase bridge
connected
TJ = 130 °C
+
-180° (Sine)
180° (Rect.)
0.03 K/W
0.06 K/W
0.08 K/W
0.1 K/W
0.16 K/W
0.2 K/W
R
thSA
= 0.01 K/W - ΔR
1.5 K/W
Maximum Total Power Loss (W)
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)
20 40 60 80 100 120
1400
1200
1000
2000
1800
1600
800
600
400
200
0
300 500400 6002001000
+
-
3 x VSK.230..Series
Three phase bridge
connected
TJ = 130 °C
120° (Rect.)
0.01 K/W
0.02 K/W
0.04 K/W
0.05 K/W
0.06 K/W
0.03 K/W
R
thSA
= 0.005 K/W - ΔR
0.25 K/W
0.16 K/W
0.12 K/W
0.08 K/W
0.1 K/W
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
VSK.230..Series
Per Junction
TJ = 25 °C
TJ = 130 °C
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
10 000
1000
100
Qrr - Typical Reverse Recovery Charge (μC)
200
400
600
800
1000
1200
1400
1600
1800
0 10 20 30 40 50 60 70 80 90 100
VSK.230..Series
Per Junction
TJ = 130 °C
dI/dt - Rate of Fall of On-State Current (A/μs)
ITM = 800 A
500 A
300 A
200 A
100 A
50 A
VS-VSK.230..PbF Series
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Fig. 12 - Gate Characteristics
Fig. 13 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
rated diF/dt : 20 V, 10 Ω; tr < = 1μs
tr < = 1 μs
Rectangular gate pulse
< = 30% rated di/dt : 10 V, 20 Ω
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
VSK.230 Series Frequency Limited by PG(AV)
(1) (4)
Device code KTVS-VS 230 - 20 PbF
1 432 5
- Circuit configuration (see dimensions - link at the end of datasheet)
2
- Current rating
3
- Voltage code x 100 = VRRM (see Voltage Ratings table)
4
- • None = standard production
• PbF = lead (Pb)-free
5
- Vishay Semiconductors product
1
VS-VSK.230..PbF Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit KT
Available 800 V: contact factory for different requirements
SCR/diode doubler circuit, positive control KH
Available 800 V: contact factory for different requirements
SCR/diode doubler circuit, negative control KL
Available 800 V: contact factory for different requirements
Two SCRs common cathodes KK
Available 800 V: contact factory for different requirements
Two SCRs common anodes KV
Available 800 V: contact factory for different requirements
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
VSKT... +
-
~~
+
-
K1G1 G2K2
VSKH... +
-
~~
+
-
K1G1
VSKL... +
-
~~
+
-
-
-
+
+
-
-
G2K2
VSKK...
VSKV...
+
+
-
-
+
+
K1
G1 G2K2
Document Number: 95086 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 03-Aug-07 1
MAGN-A-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Ø 5.5
6
(0.24)
38 (1.5)
50 (1.97)
6 (0.24)
115 (4.53)
80 (3.15)
9 (0.35)
20 (0.79)
3 screws M8 x 1.25 35 (1.38) 28 (1.12)
32
(1.26)
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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VSKT230-16 VSKT230-18 VSKT230-12 VSKL230-20D32 VSKH230-20 VSKH230-16D25 VSKT230-20 VSKH230-
12 VSKH230-08 VSKT230-08 VSKH230-16N VSKH230-20D32 VSKH230-16 VSKL230-12 VSKL230-16 VSKL230-
16D25 VS-VSKH230-14PBF VS-VSKH230-08PBF VS-VSKH230-20PBF VS-VSKV230-08PBF VS-VSKK230-12PBF
VSKH230-04 VSKH230-12PBF VSKH230-14 VSKH230-16PBF VSKH230-20PBF VSKT230-04 VSKT230-08PBF
VSKT230-12PBF VSKT230-14 VSKT230-14PBF VSKT230-16PBF VSKT230-20PBF VS-VSKL230-12PBF VS-
VSKT230-04PBF VS-VSKT230-14PBF VS-VSKT230-08PBF VS-VSKT230-12PBF VS-VSKH230-12PBF VS-
VSKL230-16PBF VS-VSKH230-16PBF VS-VSKH230-04PBF VS-VSKK230-20PBF VS-VSKT230-18PBF VS-
VSKT230-20PBF VS-VSKT230-16PBF