LS4448WS
FEATURES
For surface mounted application
Silicon epitaxial planar diode
High speed switching
Ultra small surface mount package
Low leakage current
MECHANICAL DATA
Case : 0805
Case Material: "Green" molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl)
Terminals: Lead Free Plating
Polarity : Color band denotes cathode
Weight : Approx.6mg
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE
- 100
V
POWER DISSIPATION
- 400
mW
All Dimensions in millimeter
Max.
Min.
0805
Dim.
A
D
C
B
1.80
1.45
2.20
1.05
0.75
0.25 0.65
0.95
SEMICONDUCTOR
LITE-ON
0805
A
B
C
D
REV. 1, Oct-2008, KSJS06
Units
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Surge Current at
Total Power Dissipation
Thermal Resistance Junction to Ambiant Air
Operating and Storage Temperature Range
Average Rectified Output Currnet
T
J
, T
STG
R
θ
JA
P
d
I
AV
V
RRM
V
RWM
V
DC
I
FRM
I
FSM
ValueSymbolCharacteristic
100
Maximum Ratings and Thermal Characteristics
@ T
A
= 25 unless otherwise specified
℃
Forward Voltage
Junction Capacitance
V
pF
Reverse Recovery Time
nA
uA
uA
Electrical Characteristics
@ T
A
= 25 unless otherwise specified
℃
Parameters Symbol Test Condition Min. Max. Unit
Reverse Leakage Current
V
F
I
R
C
J
T
rr
ns
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 20V
VR = 75V
VR = 20V , T
J
=150
℃
VR = 0V ; F = 1MHz
IF = IR=10mA ; RL = 100Ω
measured at IR=1mA
RMS Reverse Voltage V
RMS
mA
mA
mA
A
/W
℃
℃
70 V
-65 to +175
mW
500
250
800
2.0
400
375
25
5.0
50
4
4
Reverse Breakdown Voltage V
BR
100
IR = 1uA V
Tp = 1.0 s
Tp = 1.0 us
0.72
0.855
1.0
1.25
0.62
---
---
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Repetitive Peak Forward Current @ Duty Cycle < 50%
RATING AND CHARACTERISTIC CURVES
LS4448WS
0 25 50 75 100 125 150 175 200
JUNCTION TEMPERATURE , ( )
℃
1
10
100
1000
10000
INSTANTANEOUS REVERSE CURRENT ( nA )
Fig.4 - TYPICAL REVERSE CHARACTERISTICS
V
R
= 20V
0.1 1 10 100
REVERSE VOLTAGE (V)
1.0
1.2
1.4
1.6
1.8
2.0
JUNCTION CAPACITANCE (pF)
Fig.5-TYPICAL JUNCTION CAPACITANCE
f =1MHz
T
J
=25℃
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE , ( )
℃
0
100
200
300
400
500
POWER DISSIPATION (mW)
Fig.2 - POWER DISSIPATION DERATING CURVE
All dimensions in millimeter
1.22
Typ.
1.40
Typ.
0.51
Typ.
Recommended Mounting Pad Layout
0 25 50 75 100 125 150 175 200
CASE TEMPERATURE , ( )
℃
0
50
100
150
200
250
300
AVERAGE FORWARD CURRENT (mA)
Fig.1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE , ( V )
0.1
1
10
100
1000
INSTANTANEOUS FORWARD CURRENT (mA)
Fig.3-TYPICAL FORWARD CHARACTERISTICS
T
J
= 25
℃
T
J
= 100
℃
Pulse Width: 300us
