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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics
Similar Optocouplers
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MCT6, MCT61, MCT62, MCT66
OPTICALLY COUPLED ISOLATORS
Circuit
Features
2500 V Isolation.
Choice Of 4 Current Transfer Ratios.
Low Cost Dual-In-Line Package.
Two Packages Fit Into a 16 Lead DIP Socket.
Description
The MCT6, MCT62, MCT61 and MCT66 optoisolators have two channels for high density applications. For four channel
applications, two-packages fit into a standard 16 pin DIP socket. Each channel is an NPN silicon planar phototransistor
optically coupled to a gallium arsenide infrared emitting diode. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
250°C for 10s, 1.6mm from case
±2500Vdc (note 1)
Input Diode (each channel)
Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly:
60mA
3V
3A (1µs pulse, 300pps)
100mW
1.33mW/°C above 25°C
Output Transistor
Collector Current:
Power Dissipation:
Derate Linearly:
30mA
150mW
2.00mW/°C above 25°C
Coupled
Input to Output breakdown Voltage:
Total Package Power Dissipation:
Derate Linearly:
2500Vrms
400mW
5.33mW/°C above 25°C
Electro-optical Characteristics (Ta=25°C)
INPUT
DIODE
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VF
Rated Forward Voltage
IF=20mA
1.5
V
VR
Forward Current
IR=10µA
3
V
IR
Reverse Current
VR=3.0V
10
µA
CJ
Junction Capacitance
VF=0V
pF
OUTPUT TRANSISTOR (IF=0)
BVCEO
Collector-Emitter Voltage
IC=1mA
30
V
BVECO
Emitter-Collector Voltage
IE=100µA
6
V
ICEO
Leakage Current, Collector-Emitter
VCE=10V
100
nA
CCE
Capacitance Collector-Emitter
VCE=0V
pF
COUPLED
IC/IF
DC Current Transfer Ratio
MCT6
VCE=10V, IF=10mA
20
%
MCT66
6
%
MCT61
VCE=5V, IF=5mA
50
%
MCT62
100
%
VCE(SAT)
Collector-Emitter Saturation Voltage
MCT6, 61, 62
IC=2mA, IF=16mA
0.4
V
MCT66
IC=2mA, IF=40mA
0.4
V
SWITCHING TIMES
Non-saturated rise time, fall time
IC=2mA, VCE=10V,
µs
(Note 2)
RL=100ohm
Non-saturated rise time, fall time
IC=2mA, VCE=10V,
µs
(Note 2)
RL=1kohm
Saturated turn-on time(5V - 0.8V)
RL=2kohm, IF=40mA
µs
Saturated turn-off time (from saturation to
2.0V)
RL=2kohm, IF=40mA
µs
BW
Bandwidth
IC=2mA, VCC=10V,
kHz
RL=100ohm
ISOLATION CHARACRERISTICS
BVI-O
Isolation Voltage
t=1 min
2500
VRMS
RI-O
Isolation Resistance, MCT6X
VI-O=500Vdc
1E11
ohm
Breakdown Voltage channel-to-channel
MCT6X
Relative Humidity=40%,
f=1MHz
VDC
Capacitance between channels
pF
Notes
1.
2. The frequency at which ICis 3dB down from the 1kHz value.
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