®
TMBYV 10-60
SMALL SIGN AL SCHO TTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glas s case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
MELF
(Glass)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 60 V
IF (AV) Average Forward Current Ti = 25 °C1A
I
FSM Surge non Repetitive Forward Current Ti = 25 °C
tp = 10ms 20
Sinusoidal Pulse A
Ti = 25 °C
tp = 300µs40
Rectangular Pulse
Tstg
TjStorage and Junction Temperature Range - 65 to + 150
- 65 to + 125 °C
°C
TLMaximum Lead Temperature for Soldering during 15s 260 °C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
Rth (j - l) Junction-leads 110 °C/W
THERMAL RESISTANCE
1/5
2/5
Symbol Test Conditions Min. Typ. Max. Unit
IR*Tj = 25°CVR = VRRM 0.5 mA
Tj = 100°C 10
VF*I
F
= 1A Tj = 25°C 0.7 V
I
F
= 3A 1
STATIC CHARA CTERIS TICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj = 25°C V
R
= 0 150 pF
Tj = 25°C V
R
= 5V 40
DYNAMIC CHARACTERISTICS
* Pulse test: tp ≤ 300µs δ < 2%.
Forward current flow in a Schottky rectifier is due
to majority c arrier conduction. S o r ever se recovery
is not affected by s torage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is requir ed to charge t he depletion capac i-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
TMBYV 10-60
Figure 1. Forward current versus forward
voltage at low level (typical values). Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature. Figure 4. Reverse current versus VRRM in per
cent.
3/5
TMBYV 10-60
4/5
Figure 5. Capacitance C versus reverse
applied voltage VR (typical values) Figure 6. Surge non repetitive forward current
for a r ectangular pulse with t ≤ 10 ms.
Figure 7. Surge non repetitive forward current
versus number of cycles.
TMBYV 10-60
Marking: ring at cathode end.
Weight: 0.15g
PACKAG E MECHAN ICAL DATA
4
6.5
3
FOOT PRINT DIM ENSIONS (Mill im e ter)
MELF Glass
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.80 5.20 0.189 0.205
∅ B2.50 2.65 0.098 0.104
C 0.45 0.60 0.018 0.024
∅ D2.50 0.098
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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TMBYV 10-60
