2SC4002
Rev.0 I Page 1 of 3 I www.onsemi.com
Features
•High breakdown voltage.
•Adoption of MBIT process.
•Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 400 V
Collector-to-Emitter Voltage VCEO 400 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC200 mA
Collector Current (Pulse) ICP 400 mA
Collector Dissipation PC600 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=300V, IE=0 0.1 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 µA
DC Current Gain hFE VCE=10V, IC=50mA 60* 200*
Gain-Bandwidth Product fTVCE=30V, IC=10mA 70 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V
Output Capacitance Cob VCB=30V, f=1MHz 4 pF
Reverse T ransfer Capacitance Cre VCB=30V, f=1MHz 3 pF
* : The 2SC4002 is classified by 50mA hFE as follows : Continued on next page.
Ordering number : ENN2960A
2SC4002 NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Rank D E
hFE 60 to 120 100 to 200
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SC4002/D
2SC4002
Rev.0 I Page 2 of 3 I www.onsemi.com
Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Time ton See specified test circuit. 0.25 µs
Turn-OFF Time toff See specified test circuit. 5.0 µs
Package Dimensions Switching Time Test Circuit
unit : mm
2003B
Continued from preceding page.
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
5.0
4.0
0.5
0.6
2.0
14.0 5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
VBE= --1V
10IB1= --10IB2=IC=50mA
RL=3kΩ, RB=200Ω at IC=50mA
VCC=150V
VRRB
++
50Ω
INPUT OUTPUT
RL
100µF470µF
PW=20µsIB1
D.C.≤1% IB2
10
100
7
5
7
5
3
5
3
2
2
277735 235
101.0 100 23
hFE -- IC
ITR06236
VCE=10V
Ta=70°C
25°C
--30°C
120
80
100
60
40
20
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IC -- VBE
ITR06235
Ta=70°C
25°C
--30°C
VCE=10V
VBE(sat) -- IC
ITR06238
VCE(sat) -- IC
0.1
1.0
2
5
3
2
7
7
5
3
223 5 2 777352
1.0 10 100
ITR06237
IC / IB=10
1.0
5
7
3
10
5
7
3
2
2277735 235 23
1.0 10 100
IC / IB=10
Ta=70°C
25°C,
--30°C
Ta= --30°C
25°C
70°C
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–mA
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
2SC4002
Rev.0 I Page 3 of 3 I www.onsemi.com
0
700
600
500
400
300
200
100
2006040 80 100 140120 160
PC -- Ta
ITR06241
1.0
10
5
2
5
3
1000
100
2
5
3
2
5
3
10010
57 223353572
10ms
ICP=400mA
IC=200mA
ITR06240
A S O
1ms
100ms
DC operation(
Ta=25°C)
SW Time -- IC
0.1
2
5
7
1.0
5
3
2
5
3
7
10
7
23 5 23 5 23 577
1.0 10 100 ITR06239
ton
Ta=25°C
VCC=150V
10IB1= --10IB2=IC
tf
tstg
Collector Current, IC–mA
Switching Time, SW Time – µs
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Dissipation, PC–mW
Ambient Temperature, Ta – ˚C
2SC4002/D
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