2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features * * * High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit 400 V Collector-to-Emitter Voltage VCBO VCEO 400 V Emitter-to-Base Voltage VEBO 5 Collector Current V IC 200 Collector Current (Pulse) ICP 400 mA Collector Dissipation PC 600 mW Junction Temperature Tj Storage Temperature Tstg mA 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=300V, IE=0 0.1 A Emitter Cutoff Current IEBO hFE VEB=4V, IC=0 0.1 A DC Current Gain Gain-Bandwidth Product VCE=10V, IC=50mA VCE=30V, IC=10mA fT Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 60* 200* 70 MHz VCE(sat) IC=50mA, IB=5mA 0.6 VBE(sat) V(BR)CBO IC=50mA, IB=5mA 1.0 V(BR)CEO V(BR)EBO V V IC=10A, IE=0 400 IC=1mA, RBE= 400 V 5 V IE=10A, IC=0 V Output Capacitance Cob VCB=30V, f=1MHz 4 pF Reverse Transfer Capacitance Cre VCB=30V, f=1MHz 3 pF * : The 2SC4002 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Rev.0 I Page 1 of 3 I www.onsemi.com Continued on next page. Publication Order Number: 2SC4002/D 2SC4002 Continued from preceding page. Parameter Symbol Turn-ON Time ton toff Turn-OFF Time Ratings Conditions min typ See specified test circuit. 0.25 s See specified test circuit. 5.0 s Package Dimensions unit : mm 2003B Switching Time Test Circuit PW=20s D.C.1% 5.0 4.0 IB1 IB2 OUTPUT INPUT 4.0 RB 5.0 VR RL 50 0.6 2.0 VBE= --1V 10IB1= --10IB2=IC=50mA RL=3k, RB=200 at IC=50mA 0.44 14.0 1 2 1 : Emitter 2 : Collector 3 : Base 3 1.3 VCC=150V + 470F + 100F 0.45 0.5 0.45 Unit max 1.3 SANYO : NP IC -- VBE 120 hFE -- IC 5 VCE=10V VCE=10V 3 Ta=70C DC Current Gain, hFE 2 80 25C 100 60 25C 20 --30C 40 Ta=70C Collector Current, IC - mA 100 --30C 7 5 3 2 10 7 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE - V 7 1.4 7 5 3 2 Ta=70C 7 25C, --30C 5 7 10 2 3 5 7 100 2 3 ITR06236 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) - V Collector-to-Emitter Saturation Voltage, VCE (sat) - V 1.0 5 VBE(sat) -- IC 10 IC / IB=10 0.1 3 Collector Current, IC - mA VCE(sat) -- IC 2 2 1.0 ITR06235 5 3 2 1.0 Ta= --30C 7 5 70C 25C 3 3 2 2 7 1.0 2 3 5 7 10 2 3 Collector Current, IC - mA 5 7 2 100 ITR06237 7 1.0 Rev.0 I Page 2 of 3 I www.onsemi.com 2 3 5 7 10 2 3 5 Collector Current, IC - mA 7 100 2 3 ITR06238 2SC4002 SW Time -- IC 10 3 1.0 7 5 tf 3 2 7 5 1.0 2 3 5 7 IC=200mA 10 ms 100 5 DC 3 2 op era tio n(T a= 10 25 5 C ) 3 2 1.0 5 10 2 3 5 7 100 2 Collector Current, IC - mA 3 5 2 3 ITR06239 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE - V 3 5 ITR06240 PC -- Ta 700 Collector Dissipation, PC - mW ton Ta=25C VCC=150V 10IB1= --10IB2=IC 0.1 ICP=400mA 3 2 s 2 5 1m Collector Current, IC - mA tst g 5 s 0m 10 Switching Time, SW Time - s 7 ASO 1000 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta - C 160 ITR06241 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer's technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. % !" "& ' " " !"# $% & !'#'"# !!'((' ! ) * $%+ & !!'" "'- ) * & . " & ./&++000 + & (" #-! "-! *& !'#'"# !!'((' # ) * $%+ ! ! & , . " #$&www.onsemi.com $%+ & ''##' ! Rev.0 I Page 3 of 3 I www.onsemi.com * 2/ / 1 2SC4002/D