Three Phase PSD 83 IdAV = 100 A
Rectifier Bridge VRRM= 800-1800V
Features
•Package with screw terminals
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E 148688
Applications
•Supplies for DC power equipment
•Input rectifier for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach, Germany www.powersem.net
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
VRSM VRRM Type
VDSM VDRM
(V) (V)
800 800 PSD 83/08
1200 1200 PSD 83/12
1400 1400 PSD 83/14
1600 1600 PSD 83/16
1800 1800 PSD 83/18
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
IdAVM TC = 100 °C, (per module) 100 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1300 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 7200 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 7020 A²s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 5020 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3000 V∼
MdMounting torque (M5) 5 Nm
Terminal connection torque (M5) 5 Nm
Weight typ. 160 g
IRVR = VRRM, TVJ = 25°C ≤ 0.3 mA
VR = VRRM, TVJ = TVJM ≤ 5 mA
VFIF = 100 A, TVJ = 25 °C ≤ 1.25 V
VTO For power-loss calculations only 0.8 V
rT 5 mΩ
RthJC per Diode; DC current 0.58 K/W
per module 0.097 K/W
RthJK per Diode; DC current 0.825 K/W
per module 0.138 K/W
dsCreeping distance on surface 10.0 mm
dACreeping distance in air 9.4 mm
aMax. allowable acceleration 50 m/s²
Data according to IEC 60747 refer to a single diode unless otherwise stated
Symbol Test Conditions Characteristic Value
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach, Germany www.powersem.net
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
0.5 1.0 1.5 2.0
0
T =25°C
vj
T =150°C
vj
V (V)
F
50
100
150
200
Forward current versus
voltage drop per diode
Surge overload current
per diode
IFSM: Crest value t: duration
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FS M
TVJ=45°C TVJ=150°C
550 500
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
50 100 150 200
DC
sin.180 °
rec.120 °
rec.60 °
rec.30 °
T (°C)
C
I
dAV
[A]
100
120
80
60
40
20
0
Maximum Forward current
at case temperature
Transient thermal impedance per diode
0.01 0.1 110
0.5
1
1.5
2
K/ W
Zth
t[s]
ZthJK
ZthJC
