N-Ch P-Ch
VDSS 55V -55V
RDS(on) 0.050Ω 0.105Ω
HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
07/07/06
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lFully Avalanche Rated
IRF7343IPbF
Description
D
1
N-CHANNEL MOSFET
P- CHANNEL MOSFET
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
Max.
N-Channel P-Channel Units
VDS Drain-Source Voltage 55 -55 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7
IDM Pulsed Drain Current 38 -27
PD
@TA = 25°C Maximum Power Dissipation 2.0 W
PD
@TA = 70°C Maximum Power Dissipation 1.3 W
EAS Single Pulse Avalanche Energy72 114 mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 mJ
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter
A
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient  62.5 °C/W
Thermal Resistance
www.irf.com 1
lLead-Free
SO-8
PD - 96088
IRF7343IPbF
2www.irf.com
Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 55 VGS = 0V, ID = 250µA
P-Ch -55 VGS = 0V, ID = -250µA
N-Ch 0.059 Reference to 25°C, ID = 1mA
P-Ch 0.054 Reference to 25°C, ID = -1mA
0.043 0.050 VGS = 10V, ID = 4.7A
0.056 0.065 VGS = 4.5V, ID = 3.8A
0.095 0.105 VGS = -10V, ID = -3.4A
0.150 0.170 VGS = -4.5V, ID = -2.7A
N-Ch 1.0 VDS = VGS, ID = 250µA
P-Ch -1.0 VDS = VGS, ID = -250µA
N-Ch 7.9 VDS = 10V, ID = 4.5A
P-Ch 3.3 VDS = -10V, ID = -3.1A
N-Ch 2.0 VDS = 55V, VGS = 0V
P-Ch -50 VDS = -55V, VGS = 0V
N-Ch 25 VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch -250 VDS = -55V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±20V
N-Ch 24 36
P-Ch 26 38
N-Ch 2.3 3.4
P-Ch 3.0 4.5
N-Ch 7.0 10
P-Ch 8.4 13
N-Ch 8.3 12
P-Ch 14 22
N-Ch 3.2 4.8
P-Ch 10 15
N-Ch 32 48
P-Ch 43 64
N-Ch 13 20
P-Ch 22 32
N-Ch 740
P-Ch 690
N-Ch 190 pF
P-Ch 210
N-Ch 71
P-Ch 86
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 16Ω
N-Channel
VGS = 0V, VDS = 25V,  = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V,  = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch 2.0
P-Ch -2.0
N-Ch 38
P-Ch -27
N-Ch 0.70 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V
P-Ch -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V
N-Ch 60 90
P-Ch 54 80
N-Ch 120 170
P-Ch 85 130
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V
(BR)DSS, TJ ≤ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
nA
IRF7343IPbF
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1
10
100
3 4 5 6
V = 2 5 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
V , Drain-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
DS
D
3.0V
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
3.0V
4.5V 4.5V
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Sou rce-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
IRF7343IPbF
4www.irf.com
010 20 30 40
0.040
0.060
0.080
0.100
0.120
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
(Ω)
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.7A
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Ju nction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.1A
3.8A
4.7A
0
.04
0
.06
0
.08
0
.10
0
.12
0246810
A
GS
V , Gate-to-S ource Vo lta g e (V)
I = 4.7A
D
IRF7343IPbF
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1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHO RTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.5A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7343IPbF
6www.irf.com
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
1
10
100
34567
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
-4.5V -4.5V
IRF7343IPbF
www.irf.com 7
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
0246810 12
0.080
0.120
0.160
0.200
0.240
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -4.5V
VGS = -10V
(Ω)
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.4 A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0
.05
0
.15
0
.25
0
.35
0
.45
2581114
A
GS
-V , Gate-to-Source Vo l tage (V)
I = -3.4 A
D
IRF7343IPbF
8www.irf.com
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (n C)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.1A
V =-12V
DS
V =-30V
DS
V =-48V
DS
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ecta ngular Puls e Dur ation (sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERM AL RESPONSE)
1 10 100
0
240
480
720
960
1200
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
IRF7343IPbF
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SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRF7343IPbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2006
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA -541.
FEED DIRECTION
TE RM I NAL NUM BE R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLI METERS(INCHES).
3
. OUTLINE CONFORMS TO EIA -481 & EIA -541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)