BFP182W NPN Silicon RF Transistor* * For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 * fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP182W Marking RGs 1=E Pin Configuration 2=C 3=E 4=B - Package - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 250 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 91 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 235 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2005-10-18 1 BFP182W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 10 mA, VCE = 8 V, pulse measured 2005-10-18 2 BFP182W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.34 0.5 Cce - 0.27 - Ceb - 0.8 - GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz - 0.9 - - 1.3 - G ms - 22 - dB G ma - 16.5 - dB IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 18 - IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz - 12 - 1G ms = |S21 / S12| 2G 1/2 ma = |S21e / S12e| (k-(k-1) ), 2005-10-18 3 BFP182W SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 2005-10-18 4 BFP182W Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 300 mW RthJS Ptot K/W 200 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2005-10-18 5 0 Package SOT343 BFP182W Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2005, June Type code BGA420 Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2005-10-18 6 BFP182W Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-10-18 7