BDX53C - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  !

" 



. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BDX53B

BDX54B

ÎÎÎÎ

BDX53C

BDX54C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.2

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.48

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

ÎÎÎ

C/W

020 40 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

TATC

4.0

2.0

1.0

3.0

0 60 140



SEMICONDUCTOR TECHNICAL DATA Order this document

by BDX53B/D

 Motorola, Inc. 1995









DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

65 WATTS

CASE 221A–06

TO–220AB





REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0) BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B

(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B

(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

750

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 3.0 Adc, IC = 12 mA)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C

BDX54B, 54C

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

300

200

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 2. Switching Time Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

3.0

0.7

0.5

0.3

0.2

0.05 0.2 0.3 0.7 3.0 10

td @ VBE(off) = 0 V

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

0.07

1.0 5.0

0.1

1.0

2.0

0.5 2.0 7.0

VCC

–30 V

SCOPE

TUT

+4.0 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB

[

100 mA

MSD6100 USED BELOW IB

[

100 mA

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

APPROX

+8.0 V

APPROX

–12 V

[

8.0 k

[

120

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities

   

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(t) = r(t) R

JC = 1.92

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

1.0

Figure 5. Active–Region Safe Operating Area

2.0

0.05

10 20 100

TJ = 150

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

30 70

1.0

0.1

2.0 503.0 5.0 7.0

5.0 ms

1.0 ms

100

BDX53B, BDX54B

BDX53C, BDX54C

CURVES APPLY BELOW RATED VCEO

0.02

500

There are two limitations on the power handling ability of a

transistor average junction temperature and second break-

down. Safe operating area curves indicate IC –VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

1.0

Figure 6. Small-Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL–SIGNAL CURRENT GAIN

3000

200

500

2000

1000

TJ = 25

VCE = 3.0 V

IC = 3.0 A

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

TJ = + 25

Cib

Cob

500.2 0.5

PNP

NPN PNP

NPN

   

4 Motorola Bipolar Power Transistor Device Data

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 4.0 V

200 7.0

NPN

BDX53B, 53C PNP

BDX54B, 54C

20,000

5000

10,000

3000

2000

1000

3.0 5.0 0.1 IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150

–55

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

VCE = 4.0 V

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25

4.0 A 6.0 A

1.0 0.7 2010

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25

4.0 A 6.0 A

1.0 0.7 2010

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

   

Motorola Bipolar Power Transistor Device Data

V, TEMPERATURE COEFFICIENT (mV/ C)

°θ

V, TEMPERATURE COEFFICIENT (mV/ C)

°θ

+5.0

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10

–55 to 150

+4.0

+3.0

+1.0

–4.0

–1.0

–2.0

–3.0

–5.0

VB for VBE

VC for VCE(sat)

–55

C to 25

C to 150

*IC/IB

hFE/3

0.5 0.7

+2.0

NPN

BDX53B, BDX53C PNP

BDX54B, BDX54C

+5.0

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10

–55 to 150

+4.0

+3.0

+1.0

–4.0

–1.0

–2.0

–3.0

–5.0

VB for VBE

VC for VCE(sat)

–55

C to 25

C to 150

*IC/IB

hFE/3

0.5 0.7

+2.0

Figure 12. Collector Cut–Off Region

105

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT ( A)

10–1 +0.2 +0.40–0.2–0.4–0.6

VCE = 30 V

REVERSE FORWARD

103

104

+0.6 +0.8 +1.0 +1.2 + 1.4

TJ = 150

100

105

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT ( A)

10–1 –0.2 –0.40+0.2+0.4+0.6

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

103

104

–0.6 –0.8 –1.0 –1.2 –1.4

Figure 13. Darlington Schematic

NPN

BDX53B

BDX53C

PNP

BDX54B

BDX54C

BASE

COLLECTOR

EMITTER

[

8.0 k

[

120

BASE

COLLECTOR

EMITTER

[

8.0 k

[

120

   

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

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BDX53B/D

*BDX53B/D*

◊