VQ1001J/P
Vishay Siliconix
Document Number: 70219
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-1
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
VQ1001J 1 @ VGS = 12 V 0.8 to 2.5 0.83
VQ1001P 30 1 @ VGS = 12 V 0.8 to 2.5 0.53
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 0.85 W
DLow Threshold: 1.4 V
DLow Input Capacitance: 38 pF
DFast Switching Speed: 9 ns
DLow Input and Output Leakage
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
Plastic: VQ1001J
Sidebraze: VQ1001P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D1D4
S1S4
G1G4
NC NC
G2G3
S2S3
D2D3
N
N
N
N
Device Marking
Top View
VQ1001J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
VQ1001P
“S” fllxxyy
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Single Total Quad Unit
Drain-Source Voltage VDS 30
VQ1001J "30 V
Gate-Source Voltage VQ1001P VGS "20
_TA= 25_C0.83
Continuous Drain Current (TJ = 150_C) TA= 100_CID0.53 A
Pulsed Drain CurrentaIDM 3
TA= 25_C1.3 2
Power Dissipation (Single) TA= 100_CPD0.52 0.8 W
Thermal Resistance, Junction-to-Ambient (Single) RthJA 96 62.5 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
VQ1001J/P
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70219
S-04279—Rev. D, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA30 45
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 0.8 1.5 2.5 V
VDS = 0 V, VGS = "16 V "100
Gate-Body Leakage IGSS TJ = 125_C"500 nA
VDS = 30 V, VGS = 0 V 10
m
Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C500 mA
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 12 V 2 3.5 A
VGS = 5 V, ID = 0.2 A 1.2 1.75
Drain-Source On-ResistancebrDS(on) VGS = 12 V, ID = 1 A 0.8 1 W
TJ = 125_C1.5 2
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 200 500 mS
Dynamic
Input Capacitance Ciss 38 110
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 33 110 pF
Reverse Transfer Capacitance Crss 8 35
Switchingc
T urn-On Time tON VDD = 15 V, RL = 23 W, ID ^ 0.6 A 9 30
Turn-Off Time tOFF
VDD = 15 V, RL = 23
W
, ID
^
0.6 A
VGEN = 10 V, RG = 25 W14 30 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDQ03
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VQ1001J/P
Vishay Siliconix
Document Number: 70219
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A) TJ – Junction Temperature (_C)
2.0
012345
1.6
1.2
0.8
0.4
0
6 V
5 V
4 V
3 V
2 V
7 V 200
0 0.4 0.8 1.2 1.6 2.0
160
120
80
40
01.7 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
500
400
300
001 5
200
100
234
–55_C
25_C
TJ = 125_C
2.5
2.0
1.5
00 1.0
1.0
0.5
2.0 3.0
0 4 8 12 16 20
3
2
0
1
2.25
2.00
1.75
0.50 –50 –10 150
1.50
1.25
30 70 110
1.00
0.75
0.1 A
VGS = 10 V
VGS = 10 V
VDS = 15 V ID = 0.2 A
1.0 A
0.5 A
VGS = 4.5 V
6 V
10 V
ID = 0.5 A
VGS = 10 V
0.5 1.5 2.5
ID – Drain Current (A)
ID – Drain Current (mA)
ID – Drain Current (mA)
rDS(on) – On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
VQ1001J/P
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70219
S-04279—Rev. D, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.1 1 10
100
10
1
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
td(on)
Threshold Region Capacitance
Gate Charge Load Condition Effects on Switching
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
td(off)
trtf
10
1
0.6 0.8 2.01.0 1.2 1.4 1.6 1.8
–55_C
0.1
0.01
100_C
25_C
TJ = 150_C
120
100
80
0010 50
60
40
20 30 40
20
6
5
4
00 80 400
3
2
160 240 320
1
24 V
10 50 100
100
10
1
VDD = 25 V
RL = 24 W
VGS = 0 to 10 V
ID = 1 A
500
400
300
00 100 500
200
100
200 300 400
150_C
25_C
TJ = –55_C
ID – Drain Current (mA)
TransconductanceDrive Resistance Effects on Switching
td(on)
td(off)
trtf
ID = 1 A
RG – Gate Resistance ( W)
VDS = 7.5 V
300 ms, 1% Duty Cycle
Pulse Test
VDS = 10 V VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS = 15 V
ID – Drain Current (mA)
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
t – Switching Time (ns)
t – Switching Time (ns)
gfs – Forward Transconductance (µS)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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