V
RRM
= 150 V - 200 V
I
F(AV)
= 100 A
Features
• High Surge Capability TO-249AB Package
• Isolated to Plate
• Not ESD Sensitive
Parameter Symbol FST100150 Unit
Repetitive peak reverse voltage V
RRM
150 V
RMS reverse voltage V
RMS
106 V
DC blocking voltage
V
DC
150
V
Silicon Power
Schottk
y
Diode
Conditions
• Types from 150 V to 200V V
RRM
FST100150 thru FST100200
200
141
FST100200
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
200
DC
blocking
voltage
V
DC
150
V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol FST100150 Unit
Average forward current (per
pkg) I
F(AV)
100 A
Maximum instantaneous
forward voltage (per leg) 0.88
1
10
30
Thermal characteristics
Thermal resistance, junction -
case (per leg) R
ΘJC
1.10 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 125 °C 100
Peak forward surge current (per
leg) I
FSM
t
p
= 8.3 ms, half sine 1000 1000 A
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
V
F
T
j
= 100 °C
30
T
j
= 25 °C
I
FM
= 50 A, T
j
= 25 °C
10
Conditions
-55 to 150
1
FST100200
1.10
T
j
= 150 °C
0.92
mA
V
200
-55 to 150
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
FST100150 thru FST100200
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
FST100150 thru FST100200
F
H
P
J
G
C
B
A
L
E
Q
M
R
N
D
K
123
Inches Millimeters
Min Max Min Max
A 1.995 2.005 50.67 50.93
B 0.300 0.325 7.62 8.26
C 0.495 0.505 12.57 12.83
D 0.182 0.192 4.62 4.88
E 0.990 1.010 25.15 26.65
F 2.390 2.410 60.71 61.21
G 1.495 1.525 37.90 38.70
H 0.114 0.122 2.90 3.10
J ----- 0.420 ----- 10.67
K 0.256 0.275 6.5 7.0
L 0.490 0.510 12.45 12.95
M 0.330 0.350 8.38 8.90
N 0.175 0.195 4.45 4.95
P 0.035 0.045 0.89 1.14
R 0.445 0.455 11.30 11.56
Q 0.890 0.910 22.61 23.11
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
