955 ,) 9 $ )DVW'LRGH'LH 6/;* 'LHVL]H[PP Doc. No. 5SYA1660-02 July 03 * * * * )DVWDQGVRIWUHYHUVHUHFRYHU\ /RZORVVHV 5XJJHG62$ VDIHRSHUDWLQJDUHD )URQWVLGHSDVVLYDWLRQSRO\LPLGH 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 6\PERO PD[ 8QLW VRRM 1700 V IF 75 A 150 A -40 150 C PLQ W\S PD[ 8QLW 1.7 2.0 2.3 V IFRM &RQGLWLRQV PLQ Limited by Tvjmax Tvj 1) Maximum rated values indicate limits beyond which damage to the device may occur 'LRGHFKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV Continuous forward voltage VF IF = 75 A Continuous reverse current IR VR = 1700 V Peak reverse recovery current IRM Recovered charge QRR Reverse recovery time Reverse recovery energy trr Erec IF = 75 A, VR = 900 V, -diF/dt = 800 A/s, L = 160 nH, Tvj = 125 C, Inductive load, Switch: 5SMX12K1701 Tvj = 25 C Tvj = 125 C 2.05 Tvj = 25 C V 100 A Tvj = 125 C 1.5 mA Tvj = 25 C 54 A Tvj = 125 C 66 A Tvj = 25 C 9 C Tvj = 125 C 19 C Tvj = 25 C 350 ns Tvj = 125 C 600 ns Tvj = 25 C 4.5 mJ Tvj = 125 C 10 mJ $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH 6/;* 150 18 90 VCC = 900 V di/dt = 800 A/s Tvj = 125 C L = 160 nH 16 -40C 125 14 80 70 125C 25C 75 50 60 10 50 IRM 8 40 6 30 QRR [C], IRM [A] 12 Erec [mJ] IF [A] 100 Erec 4 20 25 2 0 0.50 1.00 1.50 2.00 2.50 3.00 0 25 50 75 200 VCC = 900 V IF = 75 A di/dt = 800 A/s Tvj = 125 C Ls = 160 nH 50 0 12 -200 10 -400 8 VR [V] 25 IR 0 -600 -25 -800 4 -1000 2 -1200 1600 0 VR -50 -75 0 400 800 1200 140 VCC = 900 V IF = 75 A Tvj = 125 C L = 160 nH Typical diode reverse recovery behaviour 120 IRM 100 80 6 60 Erec 40 QRR 0 time [ns] )LJ 0 150 Typical reverse recovery characteristics vs. forward current 14 Erec [mJ] 100 IR [A] )LJ Typical diode forward characteristics 75 125 IF [A] VF [V] )LJ 100 QRR [C], IRM [A] 0 0.00 10 QRR 400 800 1200 1600 20 0 2000 di/dt [A/s] )LJ Typical reverse recovery vs. di/dt $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1660-02 July 03 page 2 of 3 6/;* 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU 8QLW Dimensions Metallization 1) Overall die L x W 11.9 x 6.1 mm exposed LxW front metal 9.9 x 4.15 mm thickness 370 15 m 4 m 1.2 m front AISi1 back AI / Ti / Ni / Ag 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH'UDZLQJ 1RWH$OOGLPHQVLRQVDUHVKRZQLQPP This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1660-02 July 03