BZX84C2V7–BZX84C51
Vishay Semiconductors
Rev . A2, 12-Mar-01 1 (5)
www.vishay.com
Document Number 85606
350 mW Surface Mount Zener Diodes
Features
D
Planar die construction
D
350 mW Power dissipation
D
Zener voltages from 2.7V – 51V
D
Ideally suited for automated assembly processes
94 8550
Order Instruction
Type Ordering Code Remarks
BZX84C2V7 BZX84C2V7–GS08 Tape and Reel
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Power dissipation on ceramic substrate
10 mmx8 mmx0.7 mm Pd350 mW
Zener current (see figures 1–3 below)
Junction and storage temperature range Tj=Tstg –55...+150
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient on ceramic substrate 10 mmx8 mmx0.7 mm RthJA 420 K/W
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=10 mA VF0.9 V
BZX84C2V7–BZX84C51
Vishay Semiconductors
Rev . A2, 12-Mar-012 (5)
www.vishay.com Document Number 85606
Type Marking VZZZT @ IZT ZZK @ IZK TCIR@ VR
BZX84C... V
W
mA
W
mA %/
°
C
m
A V
@ IZT
2V7 Z12/KZC 2.5 to 2.9 100 5.0 600 1.0 – 0.065 20 1.0
3V0 Z13/KZD 2.8 to 3.2 100 5.0 600 1.0 – 0.060 10 1.0
3V3 Z14/KZE 3.1 to 3.5 95 5.0 600 1.0 – 0.055 5.0 1.0
3V6 Z15/KZF 3.4 to 3.8 95 5.0 600 1.0 – 0.055 5.0 1.0
3V9 Z16/KZG 3.7 to 4.1 90 5.0 600 1.0 – 0.050 3.0 1.0
4V3 Z17/KZH 4.0 to 4.6 90 5.0 600 1.0 – 0.035 3.0 1.0
4V7 Z1/KZ1 4.4 to 5.0 80 5.0 500 1.0 – 0.015 4.0 2.0
5V1 Z2/KZ2 4.8 to 5.4 60 5.0 480 1.0 +0.005 2.0 2.0
5V6 Z3/KZ3 5.2 to 6.0 40 5.0 400 1.0 +0.020 1.0 2.0
6V2 Z4/KZ4 5.8 to 6.6 10 5.0 150 1.0 +0.030 3.0 4.0
6V8 Z5/KZ5 6.4 to 7.2 15 5.0 80 1.0 +0.045 2.0 4.0
7V5 Z6/KZ6 7.0 to 7.9 15 5.0 80 1.0 +0.050 1.0 5.0
8V2 Z7/KZ7 7.7 to 8.7 15 5.0 80 1.0 +0.055 0.7 5.0
9V1 Z8/KZ8 8.5 to 9.6 15 5.0 100 1.0 +0.065 0.5 6.0
10 Z9/KZ9 9.4 to 10.6 20 5.0 150 1.0 +0.065 0.2 7.0
11 Y1/KY1 10.4 to 11.6 20 5.0 150 1.0 +0.070 0.1 8.0
12 Y2/KY2 11.4 to 12.7 25 5.0 150 1.0 +0.075 0.1 8.0
13 Y3/KY3 12.4 to 14.1 30 5.0 170 1.0 +0.080 0.1 8.0
15 Y4/KY4 13.8 to 15.6 30 5.0 200 1.0 +0.080 0.05 0.7VZnom
16 Y5/KY5 15.3 to 17.1 40 5.0 200 1.0 +0.090 0.05 0.7VZnom
18 Y6/KY6 16.8 to 19.1 45 5.0 225 1.0 +0.090 0.05 0.7VZnom
20 Y7/KY7 18.8 to 21.2 55 5.0 225 1.0 +0.090 0.05 0.7VZnom
22 Y8/KY8 20.8 to 23.3 55 5.0 250 1.0 +0.090 0.05 0.7VZnom
24 Y9/KY9 22.8 to 25.6 70 5.0 250 1.0 +0.090 0.05 0.7VZnom
27 Y10/KYA 25.1 to 28.9 80 2.0 300 0.5 +0.090 0.05 0.7VZnom
30 Y11/KYB 28 to 32 80 2.0 300 0.5 +0.090 0.05 0.7VZnom
33 Y12/KYC 31 to 35 80 2.0 325 0.5 +0.090 0.05 0.7VZnom
36 Y13/KYD 34 to 38 90 2.0 350 0.5 +0.090 0.05 0.7VZnom
39 Y14/KYE 37 to 41 130 2.0 350 0.5 +0.110 0.05 0.7VZnom
43 Y15/KYF 40 to 46 150 2.0 375 0.5 +0.110 0.05 0.7VZnom
47 Y16/KYG 44 to 50 170 2.0 375 0.5 +0.110 0.05 0.7VZnom
51 Y17/KYH 48 to 54 180 2.0 400 0.5 +0.110 0.05 0.7VZnom
1) Device mounted on ceramic substrate 8mmx10mmx0.7mm
2) VZ measured at IZT using a pulse test. IZ pulse width = 5 ms. Standard voltage tolerance is 5%.
BZX84C2V7–BZX84C51
Vishay Semiconductors
Rev . A2, 12-Mar-01 3 (5)
www.vishay.com
Document Number 85606
Characteristics (Tj = 25
_
C unless otherwise specified)
0
10
20
30
40
50
012345678910
Tj=25°C
5.0mA
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
15251
C3V9 C5V6
C6V8
C4V7
C3V3
Test Current Iz
C8V2
C2V7
Figure 1. Z–Current vs. Z–Voltage
0
10
20
30
010 20 30 40
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
15252
Tj=25°C
5.0mA
Test Current Iz
2.0mA
Test Current Iz
C10
C22
C27
C33 C36
C15
C12
C18
Figure 2. Z–Current vs. Z–Voltage
0
2
4
6
8
10
10 20 30 40 50 60 70 80 90 100
2.0mA
Test Current Iz
I – Z-Current ( mA )
Z
VZ – Z-Voltage ( V )
15253 0
Tj=25°CC39 C43 C47
C51
Figure 3. Z–Current vs. Z–Voltage
400 See Note 1
200
100
300
0
500
0100 200
P – Total Power Dissipation ( mW )
Tamb – Ambient Temperature ( °C )
15254
tot
Figure 4. Total Power Dissipation vs.
Ambient Temperature
10
100
1000
10 100
1
C – Diode Capacitance ( pF )
VZ – Z-Voltage ( V )
15255
D
Tj=25°C
VR = 1V
VR = 2V
VR = 2V
VR = 1V
Figure 5. Diode Capacitance vs. Z–Voltage
BZX84C2V7–BZX84C51
Vishay Semiconductors
Rev . A2, 12-Mar-014 (5)
www.vishay.com Document Number 85606
Dimensions in mm
14370
top view
Case: SOT23, molded plastic
Mounting position: any
Approx. weight: 0.008 grams
BZX84C2V7–BZX84C51
Vishay Semiconductors
Rev . A2, 12-Mar-01 5 (5)
www.vishay.com
Document Number 85606
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
